• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.172-176
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• 1995

Schemes to trap weakly absorbed light into the cell have played an important role in improving the efficiency of both amorphous and crystlline silicon solar cells. One class of scheme relies on randomizing the direction of light within the cell by use of Lambertian(diffuse)surfaces. A second class of scheme relies on the use fo well defined geometrical features to control the direction of light wihin the cell, Widly used geometrical features in crystalline silicon solar cells are the square based pyramids and V-shaped grooves formed in (100) orientated surfaces by intersecting(III) crystallographic planes exposed by anisotropic etching. 18.5% conversion efficiency of Buried Contact Solar Cell with pyramidally textured surface has been achieved. 18.5% efficiency of silicon solar cell is one the highest record in the world The efficieny of cell without textured surface was 16.6%, When adapting textured surface to the Cell, the efficiency has been improved over 12%.

• 한국농공학회지
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• 제38권2호
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• pp.97-107
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• 1996

This study was performed to derive the formula of sediment yield and predict the sediment elevation for fresh desalted reservoirs. Data analyzed was from 3 fresh desalted reservoirs of Sapkyo, Asan, and Namyang. Average sediment yield calculated from the sediment survey data was $279m^3/km^2/$ year for Sapkyo lake, $523m^3/km^2/$ year for Namyang lake, and $190m^3/km^2/$ year for Asan lake. The trap efficiency for Sapkyo lake was 63%. The formula of sediment yield was derived as $Q_s=6,461{\times}A{^-0.44}$ for fresh desalted reservoir. Sediment yield in fresh desalted reservoirs was much higher than that in inland reservoirs located in the same watershed, because of long trap time in fresh desalted reservoirs.

• 한국대기환경학회지
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• 제5권1호
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• pp.79-87
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• 1989

In order to reduce the smoke emission from the in-service city bus, this study was evaluated the particulate reduction efficiency and regeneration ability of the catalitic trap oxidizer (CTO) on the city bus (D0846HM engine) equipped with it. Before the on-road CTO test, the laboratory test of CTO on engine test-bench was performed. Reduction efficiencies of smokes and particulates were 54 and 45%, and those of gaseous pollutants such as carbon monoxide (CO) and hydrocarbons (HC) were 90 and 60%. In order to evaluate the regeneration ability of the CTO by the catalytic oxidation of trapped particulate, field test was performed on the in-service road. The regeneration temperature was 350$^\circ$ which was same with the exhaust temperature of city bus.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.449-457
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• 2012

The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-$Al_2O_3$-Nitride-Oxide-Semiconductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is ~0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36~0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated $h^*$ diffusion-induced Si/$SiO_2$ interface trap ($N_{IT}$) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide ($N_{OT}$). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4~0.9 in the programmed cell and n=0.65~1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperature-controlled $h^*$ diffusion followed by $N_{IT}$ passivation.

• 한국자동차공학회논문집
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• 제22권2호
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• pp.60-66
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• 2014

A control oriented model of the Lean $NO_x$ trap (LNT) was developed to determine the timing of $NO_x$ regeneration. The LNT model consists of $NO_x$ storage and reduction model. Once $NO_x$ is stored ($NO_x$ storage model), at the right timing $NO_x$ should be released and then reduced ($NO_x$ reduction model) with reductants on the catalyst active sites, called regeneration. The $NO_x$ storage model simulates the degree of stored $NO_x$ in the LNT. It is structured by an instantaneous $NO_x$ storage efficiency and the $NO_x$ storage capacity model. The $NO_x$ storge capacity model was modeled to have a Gaussian distribution with a function of exhaust gas temperature. $NO_x$ release and reduction reactions for the $NO_x$ reduction model were modeled as Arrhenius equations. The parameter identification was optimally performed by the data of the bench flow reactor test results at space velocity 50,000/hr, 80,000/hr, and temperature of $250-500^{\circ}C$. The LNT model state, storage fraction indicates the degree of stored $NO_x$ in the LNT and thus, the timing of the regeneration can be determined based on it. For practical purpose, this model will be verified more completely by engine test data which simulate the NEDC transient mode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 한국응용곤충학회지
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• 제60권2호
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• pp.247-254
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• 2021

동절기(1 ~ 2월) 시설재배지 대파에 파총채벌레(Thrips tabaci)가 발생하였다. 파총채벌레의 동정은 트랩에 포획된 개체의 DNA 바코드를 중심으로 확인하였다. 주별 파총채벌레 발생은 끈끈이판 하나당 약 240 ~ 700 마리의 포획 밀도를 나타냈다. 포획 효율은 트랩 색상에 따라 차이를 보여 황색이 청색 트랩에 보다 우수하였다. 또한 대부분(90% 이상) 대파는 이들 파총채벌레의 식흔을 보였다. 이러한 파총채벌레 발생은 특정 비닐하우스에 국한되었다. 이러한 국부적 파총채벌레의 발생 양상을 분석하고자 이들 행동을 실내외에서 관찰하였다. 실내 분석은 약 1.5 mm 정도 몸길이의 성충이 약 5 cm 까지 도약하였다. 야외에서는 이들 성충이 시설재배지 최대 높이인 2 m 까지 비행 행동을 보였다. 이러한 비행 행동은 인근(2 m 이내) 시설재배지까지 이동이 가능할 것으로 추정되었으나 실제로 전파되지 않은 것은 야외 저온 조건이 물리적 장벽을 제공하여 준 것으로 해석되었다. 따라서 겨울기간 파총채벌레의 대발생은 특정 소지역에 국한되었다.

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.92-96
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• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• 환경생물
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• 제33권1호
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• pp.75-82
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• 2015

댐과 보의 건설로 인한 하천의 단절 및 어류의 이동 문제를 해결하기 위해 다수의 어도를 건설하고 있다. 하지만 이에 대한 어도 효율성 평가나 적합성에 대한 연구는 상당히 제한적으로 이루어지고 있다. 따라서 본 연구는 2012년 6월부터 10월까지 매달 1회씩 trap을 이용하여 공주보에 설치된 아이스하버식 어도에서 시기별, 시간대별, 어도 위치별 어도 이용 차이를 분석하였다. 연구 결과, 6~8월보다 9~10월에 어도를 이용하는 종 및 개체가 감소하였다. 그리고 어도 좌안 측면이 통계적으로 유의하지 않지만 많은 종 및 개체가 출현하였고, 또한 다른 위치보다 다양한 크기의 개체들이 출현하였다. 상류수위와 채집된 소상 어류 개체수는 양의 상관성을 나타내고 있었다. 그러나 일평균 상류수위가 증가할수록 전장 70 mm 이하 소형개체들의 출현율이 감소하는 경향이 나타났다. 어도 내 시간대별 이동은 종별 생태적인 특성에 따라 차이를 보였다. 전체적으로 크기가 작은 개체부터 큰 개체까지 다양한 크기의 어류가 어도를 이용했다. 이러한 결과는 국내에 건설된 아이스하버식 어도관리 및 평가에 도움이 될 것으로 판단된다.

• Current Photovoltaic Research
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• 제4권3호
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• pp.98-107
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• 2016

Third-generation photovoltaics are of low cost based on solution processes and are targeting a high efficiency. To meet the commercial demand, however, significant improvements of both efficiency and stability are required. In this sense, interfacial engineering can be useful key to solve these issues because trap sites and interfacial energy barrier and/or chemical instability at organic/organic and organic/inorganic interfaces are critical factors of efficiency and stability degradation. Here, we thoroughly review the interfacial engineering strategies applicable to three representative third-generation photovoltaics - organic, perovskite, colloidal quantum dot solar cell devices.