• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.63.2-63.2
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• 2012

One-dimensional nanowires (NW)/nanorods are under intense investigation in materials science due to their potential applications in many electronic devices. Since the properties required for these applications are greatly influenced by their microscopic structures, it is important to understand the relation between the microstructures with their optical and electric properties. In this study, Ag nanowires were synthesized in various dimensions and coated onto PET films to form transparent electrode. Their optical and electrical properties were studied in terms of their microstructures. Highly transparent (>90%), low haze transparent electrode films were successfully fabricated with surface resistance as low as (~50 ${\Omega}$/>).

• 전기학회논문지
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• 제65권12호
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.374-377
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• 2009

The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.162-169
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• 2017

Indium tin oxide (ITO) thin films show a low sheet resistance and high transmittance in the visible range of the spectrum. Therefore, they play an important role as transparent electrodes for flat panel displays. However, their resistivity is rather high for use as a transparent electrode in large displays. One way to improve electrical and optical properties in large displays is to use ITO/Ag/ITO multilayer films. ITO/Ag/ITO multilayer films have lower sheet resistance than single layer ITO films with the same thickness. Prior to the ITO/Ag/ITO multilayer experiments, optimal condition for thickness change are necessary. Their thicknesses were deposited differently in order to analyze electrical and optical properties. However, when optimal single film characteristics are applied to ITO/Ag/ITO multilayer films, other phenomena appeared. After analyzing the electrical and optical properties by changing ITO and Ag film thickness, ITO/Ag/ITO multilayer films were optimized. By combining ITO film at $586\;{\AA}$ and Ag film at 10 nm, the ITO/Ag/ITO multilayer films showed optimized high optical transmittance of 87.65%, and the low sheet resistance of $5.5{\Omega}/sq$.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.740-744
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• 2017

Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

• 공업화학
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• 제9권2호
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• pp.214-219
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• 1998

초음파분무 열분해에 의하여 유리 기판 위에 투명전도성 산화주석막을 증착하였다. 증착변수가 산화주석막의 전기저항, 광투과도, 결정구조 및 두께에 미치는 영향을 조사하였다. 증착시간과 염화주석(IV)의 농도가 증가함에 따라, 증착된 산화주석막의 전기저항과 가시선 및 근적외선 영역에서의 광투과도가 감소함을 보여주었다. 공기중에서 열처리온도가 증가하면, 증착된 산화주석막은 전기저항과 광투과도가 증가함을 나타냈다. 본 연구결과는 초음파분무열분해가 단일과정으로서 양질의 투명전도막을 효율적으로 제조할 수 있는 유망한 증착기술임을 암시한다.

• 공업화학
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• 제21권2호
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• pp.224-229
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• 2010

Transparent conducting oxide (TCO) 박막은 평판 디스플레이 산업에 널리 사용되고 있다. 화학적으로 우수한 투명전도성 Indium Zinc Oxide (IZO) 필름은 Indium Tin Oxide (ITO) 필름의 대체 물질로 관심을 끌고 있다. 본 연구에서는 90 : 10 wt%의 $In_2O_3$와 ZnO를 혼합하여 만든 타겟으로 전자빔 증착법을 이용하여 polynorbornene (PNB) 기판 위에 IZO 박막을 제조하였다. UV/Visible spectrophotometer, 4-Point Probe를 이용하여 증착 두께와 산소도입 속도에 따른 IZO 필름의 전기적 및 광학적 특성을 연구하였으며, SEM, XRD 및 XPS를 이용하여 증착된 IZO의 구조적 특성 및 표면조성비를 연구하였다.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.117-121
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• 2010

The composite films were fabricated by air-spray method under the 2 kgf/$cm^2$ pressure using the multi-walled CNTs solution and the nitrocellulose on a 10 ${\mu}m$ polyimide film substrates. We obtained the composite films which were sprayed with the MWCNT dispersion by varying the spray time from 20, 40 and 60sec. The electrical and the optical properties of the sandwiched-structure-composite thin films were investigated by an UV/VIS spectrometer and a Hall Effect equipment. As a result, the optical transmittance of all thin films in the visible range, as well as the electrical conductance shows an available value for the transparent electrode. The carrier concentration and the light transmittance rate for the fabricated sample are between $3.733{\times}10^{10}$ and $6.551{\times}10^{14}cm^{-3}$, around 35 to 95%, respectively.

• 대한전자공학회논문지
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• 제23권4호
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• pp.498-505
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• 1986

In2O3: Sn(ITO) transparent conducting films were fabricated by the electron beam evaporation method. The dependence of their electrical and optical properties on deposition conditions were examined. The optimum evaporation conditions were such that the deposition rate was 5-10\ulcornersec, oxygen partial pressure was 4x10**_4 torr, substate temperatudre was above 300\ulcorner, and SnO2 doping rate was 10 mol%. The values of sheet resistance and transmittance of the films in visible region fabricated under these optimum conditins were 12\ulcorner/ and 87-99%, respecively. And the energy conversion efficiency of the SIS solar cell fabricated using ITO was 9.16%. It is shown that the transparent conducting films can be applied to the TV camear pick-up tube and solar cell.

• 마이크로전자및패키징학회지
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• 제28권1호
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• pp.21-29
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• 2021

Recently, semiconductor chips and electronic components are increasingly being used in IT devices such as wearable watches, autonomous vehicles, and smart phones. As a result, there is a growing concern about device malfunctions that may occur due to electromagnetic interference being entangled with each other. In particular, electromagnetic wave emissions from wearable or flexible smart devices have detrimental effects on human health. Therefore, flexible and transparent electromagnetic interference (EMI) shielding materials and films with high optical transmittance and outstanding shielding effectiveness have been gaining more attention. The EMI shielding films for flexible and transparent electronic devices must exhibit high shielding effectiveness, high optical transmittance, high flexibility, ultrathin and excellent durability. Meanwhile, in order to prepare this EMI shielding films, many materials have been developed, and results regarding excellent EMI shielding performance of a new materials such as carbon nano tube (CNT), graphene, Ag nano wire and MXene have recently been reported. Thus, in this paper, we review the latest research results to EMI shielding films for flexible and transparent device using the new materials.