• Korean Journal of Optics and Photonics
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• v.35 no.1
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• pp.1-8
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• 2024

Explicit expressions for the transmission pseudo-ellipsometric constants and transmittance of a semi-transparent glass substrate coated with thin films are presented to determine the optical constants of a very weakly absorbing thin film coated on a glass substrate. The intensity of the multiply reflected light inside the semi-transparent substrate is superposed incoherently and the light absorption by the substrate is properly treated, so that modeling analysis of thin films coated on a semi-transparent substrate can be performed with increased accuracy. The extinction coefficient derived from transmittance analysis is compared to that from ellipsometric analysis in the weakly absorbing region, and the difference between the two extinction coefficients is discussed in relation to the sensitivities of the transmittance and ellipsometric constants. This transmittance analysis, together with ellipsometric analysis, is applied to a glass substrate coated with a SiN thin film, and it is shown that the thickness and complex refractive index of the SiN thin film can be determined accurately, even though the extinction coefficient is very small.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.123-126
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• 2010

$Cu_2O$ nanoparticles-based films are fabricated by spin-coating on glass substrates and their optoelectronic characteristics are investigated in this study. The $Cu_2O$ films are nearly all-transparent as high as 98% in a wavelength range from 400 nm to 900 nm and three exciton peaks associated with the sublevels in the conduction band are observed at the wavelengths shorter than 400 nm in the absorption spectrum. Under the illumination of the 325 nm wavelength light, the photocurrent efficiency of the $Cu_2O$ film is $1.8\times10^5 {\mu}A/W$ at a voltage of 2.5 V in air.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1233-1234
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• 2006

A simple new method to fabricate transparent carbon nanotube field emission devices was developed. The highly graphitized single wall carbon nanotubes were attached on Sn/ITO glass by arc discharge method. Post heat treatments below the deformation temperature of soda-lime glass guaranteed a good mechanical adhesion and electrical contact of the nanotubes. The Sn layer was oxidized below $400^{\circ}C$ and became transparent. As increasing the oxidation temperatures, the emission properties became stable and life time of emitter has been increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.179-180
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• 2008

In this paper, we studied the optical property of transparent glasses for photovoltaic module manufacturing. The glass should have high mechanical and chemical resistance from outside environmental. Also optical transparency is a key requirement for better electrical performance. In here, we examine several kinds of transparent glasses and special purpose ones. This would give some real information for understanding PV module. The further analysis is described in the following paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.483-485
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• 2014

Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1553-1555
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• 2003

Coatings on glass with highly transparent conducting oxide films(TCOs) are performed mostly by using indium tin oxide(ITO). This Oxide material is very common for applications where both high electrical conductivity. Photovoltaic cells, transparent electrical heater, selective optical filter, and a optical transmittance are essential. In this study, ITO thin films were deposited on $SiO_2$/soda-line glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy(AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-800nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.670-675
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• 2004

Glasses in the $Bi_{2}O_3-SiO_2-ZnO$ glasses system were examined as a potential replacement for lead-oxide glass frits with low firing temperature ($500\sim600^{\circ}C$) for the dielectric layer of a plasma display panel (PDP). The glasses were evaluated for glass transition temperature($T_{g}$) and thermal expansion coefficient(${\alpha}$). After forming transparent thick films by a screen-printing method, it was evaluated for the optical properties. The transmittance of thick films fired at $500-600^{\circ}C$ showed above $80\%$, which was not dependent on the firing temperature. As a result, many pores were observed at samples fired at low temperature, while the number of pores from samples prepared at high temperature decreased and the pores size increased.

• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.68-75
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• 2011

In this review, we have investigated the effect of $TiO_2$-based blocking layers (t-BLs), deposited on a transparent conductive oxide (TCO)-coated glass substrate, on the photovoltaic performance of dye-sensitized solar cells (DSSCs). The t-BL was deposited using spin-coating or sputtering technique, and its thicknesses were varied to study the influence of the thin $TiO_2$ layer in between transparent conducting glass and nanocrystalline $TiO_2$ (nc-$TiO_2$). The DSSC with the t-BL showed the improved adhesion and the suppressed charge recombination at a TCO glass substrate than those without the t-BL, which led to the higher conversion efficiency.

• Nuclear Engineering and Technology
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• v.49 no.4
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• pp.792-800
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• 2017

The essential requirement of a material to be used for engineering purposes at nuclear establishments is its ability to attenuate the most penetrating ionizing radiations, gamma $({\gamma})-rays$. Mostly, high-Z materials such as heavy concrete, lead, mercury, and their mixtures or alloys have been used in the construction of nuclear establishments and thus termed as nuclear engineering materials (NEM). The NEM are classified into two categories, namely opaque and transparent, depending on their behavior towards the visible spectrum of EM waves. The majority of NEM are opaque. By contrast, various types of glass, which are transparent to visible light, are necessary at certain places in the nuclear establishments. In the present study, ${\gamma}-ray$ shielding behaviors (GSB) of six glass samples (transparent NEM) were evaluated and compared with some opaque NEM in a wide range of energy (15 keV-15 MeV) and optical thickness (OT). The study was performed by computing various ${\gamma}-ray$ shielding parameters (GSP) such as the mass attenuation coefficient, equivalent atomic number, and buildup factor. A self-designed and validated computer-program, the buildup factor-tool, was used for various computations. It has been established that some glass samples show good GSB, thus can safely be used in the construction of nuclear establishments in conjunction with the opaque NEM as well.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.