Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of Amorphous In-Si-O Multilayer for Low Emissivity Applications

로이 응용을 위한 비정질 In-Si-O 다층구조 특성 평가

  • Lee, Young Seon (Department of Electronic Engineering, Cheongju University) ;
  • Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 이영선 (청주대학교 전자공학과) ;
  • 이상렬 (청주대학교 반도체공학과)
  • Received : 2014.06.19
  • Accepted : 2014.06.30
  • Published : 2014.08.01
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Abstract

Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.

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References

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