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http://dx.doi.org/10.4313/JKEM.2014.27.8.483

Characterization of Amorphous In-Si-O Multilayer for Low Emissivity Applications  

Lee, Young Seon (Department of Electronic Engineering, Cheongju University)
Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.8, 2014 , pp. 483-485 More about this Journal
Abstract
Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.
Keywords
Low emissivity; Multilayer; Transparent conductive oxide; Amorphous oxide semiconductor; Ag embedded;
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