• Title/Summary/Keyword: transparent conducting film

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Fabrication of compact surface structure by molar concentration on Sb-doped SnO2 transparent conducting films (안티몬 도핑된 주석 산화물 투명전도막의 몰 농도에 따른 치밀한 표면 구조 제조)

  • Bae, Ju-Won;Koo, Bon-Ryul;Ahn, Hyo-Jin
    • Journal of Powder Materials
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    • v.25 no.1
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    • pp.54-59
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    • 2018
  • Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

Effect of Substrate Temperature on the Properties of ZnO Transparent conducting Thin Film Prepared by the Vapour Spraying Method (분사증기법에 의해 형성된 ZnO 투명전도막에서 기판온도가 막 특성에 미치는 영향)

  • 이환수;주승기
    • Journal of the Korean Ceramic Society
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    • v.31 no.4
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    • pp.436-447
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    • 1994
  • ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.

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Flexible, Transparent Thin-Film Transistors Fabricated by Ink-Jet Printing with Carbon Nanotube-Based Conducting Ink

  • Lee, Yeon-Ju;Lee, Woo-Suk;Jeong, Soo-Kyeong;Choi, Seok-Ju;Kim, Hye-Min;Chun, Jin-Young;Kim, Sung-Ho;Geckeler, Kurt E.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.920-922
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    • 2009
  • Flexible, transparent thin-film transistor with active layers composed of carbon nanotube-based conducting ink were fabricated on a plastic substrate by ink-jet printing. The properties of the formulated conducting ink containing carbon nanotubes, a conducting polymer, and additives were characterized and optimized. The conducting ink was applied to flexible thin-film transistors using ink-jet printing.

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Some properties on Conversion Efficiency of Flexible Film-Typed DSCs with ZnO:Al and ITO Transparent Conducting layers (플랙시블 염료태양전지 특성에 미치는 ZnO 및 ITO의 영향)

  • Kim, Ji-Hoon;Kwak, Dong-Joo;Sung, Youl-Moon;Choo, Young-Bae
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1096_1097
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    • 2009
  • Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

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Properties of Nb-doped TiO2 Transparent Conducting Oxide Film Fabricated by RF Magnetron Sputtering (RF 마그네트론 스퍼터링에 의해 합성된 Nb-doped TiO2 투명전극의 특성)

  • Kim, Min-Young;Cho, Mun-Seong;Lim, Dong-Gun;Park, Jae-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.3
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    • pp.204-208
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    • 2012
  • $TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

Properties of Sputtered Ga Doped ZnO Thin Film Under Various Reaction Gas Ratio (Reaction Gas 변화에 따라 스퍼터된 Ga Doped ZnO 박막의 특성)

  • Kim, Jong-Wook;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.4
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    • pp.289-293
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    • 2013
  • We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

Performance-determining factors in flexible transparent conducting single-wall carbon nanotube film

  • Song, Young Il;Lee, Jung Woo;Kim, Tae Yoo;Jung, Hwan Jung;Jung, Yong Chae;Suh, Su Jeung;Yang, Cheol-Min
    • Carbon letters
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    • v.14 no.4
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    • pp.255-258
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    • 2013
  • Flexible transparent conducting films (TCFs) were fabricated by dip-coating single-wall carbon nanotubes (SWCNTs) onto a flexible polyethylene terephthalate (PET) film. The amount of coated SWCNTs was controlled simply by dipping number. Because the performance of SWCNT-based TCFs is influenced by both electrical conductance and optical transmittance, we evaluated the film performance by introducing a film property factor using both the number of interconnected SWCNT bundles at intersection points, and the coverage of SWCNTs on the PET substrate, in field emission scanning electron microscopic images. The microscopic film property factor was in an excellent agreement with the macroscopic one determined from electrical conductance and optical transmittance measurements, especially for a small number of dippings. Therefore, the most crucial factor governing the performance of the SWCNT-based TCFs is a SWCNT-network structure with a large number of intersection points for a minimum amount of deposited SWCNTs.

Electrical and optical properties of ZnO:Al transparent conducting films deposited on flexible polymeric substrate (플렉시블한 폴리머 기판위에 증착된 ZnO:Al 투명전도막의 전기 및 광학적 특성)

  • Jessie, Darma;Park, Byung-Wook;Sung, Youl-Moon;Kwak, Dong-Joo
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1262-1263
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    • 2008
  • Recently film-typed dye sensitized solar cell(DSC) attracts much attention with increasing applications for its flexibility and transparency. The ZnO:Al thin film, which serves mainly as transparent conducting electrode, Aluminium-doped zinc oxide(ZnO:Al) thin film has emerged as one of the most promising transparent conducting films since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r. f. magnetron sputtering method. The effects of gas pressure and r. f. discharge power on the morphological, electrical and optical properties of ZnO:Al thin film were studied. Especially the variation in substrate thickness after sputtering and surface morphology of the substrate were investigated and clarified. The results showed that the film deposited on the PET substrate at r. f. discharge power of 180 W showed the minimum resistivity of about $1.5{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 93%.

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Structural, Optical, and Electrical Properties of Sputtered Al doped ZnO Thin Film Under Various RF Powers (RF 파워에 따라 스퍼터된 Al doped ZnO 박막의 구조적, 광학적, 전기적 특성)

  • Kim, Jong-Wook;Kim, Deok-Kyu;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.177-181
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    • 2011
  • We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

Transparent Conducting Ga-doped ZnO Thin Film for Flat-Panel Displays with a Sol-gel Spin Coating

  • Nam, Gil-Mo;Kwon, Myoung-Seok
    • Journal of Information Display
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    • v.9 no.3
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    • pp.8-11
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    • 2008
  • A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.