• Title/Summary/Keyword: transition-metal films

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Sol-Gel Synthesis and Transport Properties of $La_{2/3}Sr_{1/3}Mn_{0.99}{^{57}}Fe_{0.01}O_3$Granular Thin Films

  • Shim, In-Bo;Kim, Sung-Baek;Ahn, Geun-Young;Yun, Sung-Roe;Cho, Young-Suk;Kim, Chul-Sung
    • Journal of Magnetics
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    • v.6 no.1
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    • pp.1-4
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    • 2001
  • We have used acetic acids ethanol and distilled water as a solvent to synthesize $La_{2/3}Sr_{1/3}Mn_{0.99}{^{57}}Fe_{0.01}O_3$(LSMFO) precursor. Crack-free LSMFO granular polycrystalline thin films have been deposited on thermally oxidized silicon substrates by spin coaling. The dependence of crystallization, surface morphology, magnetic and transport properties on annealing temperature was investigated. With increasing annealing temperature, the metal-semiconductor (insulator) transition temperature and the magnetic moment decrease while the resistivity increases. The lattice constants remain almost unchanged. For LSMFO thin films, spin-dependent interfacial tunneling and/or scattering magnetoresistance were observed. Our results indicate that the annealing temperature is very important in determining the intrinsic and extrinsic magnetotransport properties.

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Electronic structure studies of CoFeRO (R=Hf,La,Nb) thin films by X-ray absorption spectroscopy

  • Song, J.H.;Gautam, S.;Chae, K.H.;Asokan, K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.378-378
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    • 2010
  • We report the electronic structure of CoFeO-R (R=Hf, La, Nb) thin films studied by x-ray absorption spectroscopy (XAS). These ferrites thin films were prepared by pulsed laser deposition method and characterized by XAS measurements at O K-, Co and Fe L-edges. The O K-edge spectra suggest that there is a strong hybridization between O 2p and 3d electrons of transition metal cations and Fe $L_{3,2}$-edge spectra indicate that Fe-ions exist in $Fe^{2+}$ with tetrahedral site of the spinel structure. Divalent Co ions is also distributed in tetrahedral site with rare earth ions goes to octahedral sites of spinel structure. X-ray magnetic circular dichroism (XMCD) is also used to explain the symmetry and magnetic nature dependence on rare-earth ions.

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Line-shaped superconducting NbN thin film on a silicon oxide substrate

  • Kim, Jeong-Gyun;Suh, Dongseok;Kang, Haeyong
    • Progress in Superconductivity and Cryogenics
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    • v.20 no.4
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    • pp.20-25
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    • 2018
  • Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of $10{\mu}m$ by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal-oxide-semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

Chemical Doping of $TiO_2$ with Nitrogen and Fluorine and Its Support Effect on Catalytic Activity of CO Oxidation

  • Chakravarthy, G. Kalyan;Kim, Sunmi;Kim, Sang Hoon;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.142.2-142.2
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    • 2013
  • The effect of substrate on catalytic activity of CO oxidation with transition metal Platinum nanoparticles on doped and undoped TiO2 was investigated. Titanium dioxide was doped chemically with non-metal anions including nitrogen and fluorine. Undoped TiO2 was synthesized via simple conventional sol-gel route. Thin films of titania were developed by spin coating technique and the characterization techniques SEM, XRD, UV-Vis Absorption Spectroscopy and XPS were carried out to examine the morphology of films, crystal phase, crystallites, optical properties and elemental composition respectively. XPS analysis from doped TiO2 confirmed that the nitrogen site were interstitial whereas fluorine was doped into TiO2 lattice substitutionally. Catalytic activity systems of Pt/doped-TiO2 and Pt/undoped-TiO2 were fabricated to reveal the strong metal-support interaction effect during catalytic activity of CO oxidation reactions. By arc plasma deposition technique, platinum nanoparticles with mean size of 2.7 nm were deposited on the thin films of doped and undoped titanium dioxide. The CO oxidation was performed with 40 Torr CO and 100 Torr O2 with 620 Torr He carrier gas. Turn over frequency was observed two to three folds enhancement in case of Pt/doped TiO2 as compared to Pt/TiO2. The electronic excitation and the oxygen vacancies that were formed with the doping process were the plausible reasons for the enhancement of catalytic activity.

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DC Sputtering Process of 2-Dimensional Tungsten Disulfide Thin Films on Soda-Lime Glass Substrates (DC 스퍼터링을 이용한 소다라임 유리 기판상에 2차원 황화텅스텐 박막 형성 공정)

  • Ma, Sang Min;Kwon, Sang Jik;Cho, Eou Sik
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.3
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    • pp.31-35
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    • 2018
  • Tungsten disulfide($WS_2$) thin films were directly deposited by direct-current(DC) sputtering and annealed by rapid thermal processing(RTP) to materialize two-dimensional p-type transition metal dichalcogenide (TMDC) thin films on soda-lime glass substrates without any complicated exfoliation/transfer process. $WS_2$ thin films deposited at various DC sputtering powers from 80 W to 160W were annealed at different temperatures from $400^{\circ}C$ to $550^{\circ}C$ considering the melting temperature of soda-lime glass. The optical microscope results showed the stable surface morphologies of the $WS_2$ thin films without any defects. The X-ray photoelectron spectroscopy (XPS) results and the Hall measurement results showed stable binding energies of W and S and high carrier mobilities of $WS_2$ thin films.

Synthesis and Temperature-Dependent Local Structural Properties of Ti2O3

  • Hwang, Inhui;Jin, Zhenlan;Park, Changin;Jiang, Bingzhi;Han, S.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.202.2-202.2
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    • 2013
  • Ti2O3 is known as a typical Mott insulator with a transition temperature of near $200^{\circ}C$. Unlike VO2, Ti2O3 does not have a structural phase transition near the metal-insulator-transition (MIT) temperature. We investigated the temperature-dependent thermal vibration change using temperature-dependent x-ray absorption fine structure (XAFS) at Ti K-edge in the temperature range of 300~600 K. Ti2O3 powder and films were synthesized using thermal chemical vapor deposition (CVD) at $800{\sim}900^{\circ}C$. X-ray diffraction measurements show a single phased Ti2O3 at room temperature. XAFS confirmed no structural phase transition in the temperature of 300~600 K. A small but distinguishable structural disorder change was observed near the transition temperature. We will discuss the MIT behavior with the change of structural disorder.

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Silicidation and Thermal Stability of the So/refreactory Metal Bilayer on the Doped Polycrystalline Si Substrate (Co/내열금속/다결정 Si 구조의 실리사이드화와 열적안정성)

  • 권영재;이종무
    • Journal of the Korean Ceramic Society
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    • v.36 no.6
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    • pp.604-610
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    • 1999
  • Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

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Fabrication of low power NO micro gas senor by using CMOS compatible process (CMOS공정 기반의 저전력 NO 마이크로가스센서의 제작)

  • Shin, Han-Jae;Song, Kap-Duk;Lee, Hong-Jin;Hong, Young-Ho;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.17 no.1
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    • pp.35-40
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    • 2008
  • Low power bridge type micro gas sensors were fabricated by micro machining technology with TMAH (Tetra Methyl Ammonium Hydroxide) solution. The sensing devices with different heater materials such as metal and poly-silicon were obtained using CMOS (Complementary Metal Oxide Semiconductor) compatible process. The tellurium films as a sensing layer were deposited on the micro machined substrate using shadow silicon mask. The low power micro gas sensors showed high sensitivity to NO with high speed. The pure tellurium film used micro gas sensor showed good sensitivity than transition metal (Pt, Ti) used tellurium film.

YBCO coated conductors fabricated by a MOCVD (metal organic chemical vapor deposition) method (MOCVD (metal organic chemical vapor deposition)법으로 제조한 YBCO 초전도 coated conductors)

  • 김찬중;전병혁;최준규;선종원;김호진
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.10a
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    • pp.21-23
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    • 2003
  • MOCVD method is one of promising techniques which can fabricate YBCO coated conductors in a low Price A continuous reel-to-reel MOCVD device using a dispersed solid source was designed and manufactured. YBCO films were deposited on various substrates of metallic silver, (100) MgO and SrTiO3 single crystals. The chemical composition of the metal organic sources was changed to optimize the processing condition associate to the deposition of the stoichiometric Y3a2Cu3O7-y. We report the superconducting transition temperature, surface morphology and chemical composition of the YBCO film surfaces.

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