• Title/Summary/Keyword: transition of a function

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Image Sharpening based on Cellular Automata with the Local Transition Rule (국소 천이규칙을 갖는 셀룰러 오토마타를 이용한 영상 첨예화)

  • Lee, Seok-Ki
    • Proceedings of the Korea Information Processing Society Conference
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    • 2010.04a
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    • pp.502-504
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    • 2010
  • We propose novel transition rule of cellular automata for image enhancement and sharpening algorithm using it. Transition rule present sequential and parallel behavior. it also satisfy Lyapunov function. This image sharpening was developed and experimented by using a dynamic feature of convergence to fixed points. We can obtain efficiently sharpened image by performing arithmetic operation at the gradual parts of difference of brightness without image information.

Fabrication, temperature-dependent local structural and electrical properties of VO2 thin films

  • Jin, Zhenlan;Hwang, In-Hui;Park, Chang-In;Han, Sang-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.169.2-169.2
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    • 2015
  • $VO_2$ is a well-known a metal-to-insulator-transition (MIT) material, accompanied with a first order structural phase transition near room temperature. Because of the structural phase transition and the MIT occur near a same temperature, there is an ongoing argument whether the MIT is induced by the structural phase transition. $VO_2$ exhibits a relatively weak anti-oxidization ability and can be oxidized to higher-valence oxides (e.g., $V_4$ $O_7$ or $V_2$ $O_5$) when annealed at a high temperature in an oxygen-rich atmosphere. We fabricated $VO_2$ films on $Al_2$ $O_3$ (0001) substrates using a DC magnetron sputtering deposition process with carefully control the $O_2$ percentage in an atmosphere. X-ray diffraction measurements from the films showed only (0l0) peaks with no extra peaks, indicating b-oriented films. The temperature-dependent local structural properties of $VO_2$ films were investigated by using in-situ X-ray absorption fine structure (XAFS) measurements at the V K edge. XAFS revealed that the structural phase transition was occurred nearly $70^{\circ}C$ for heating process and reproducible. Resistance measurements as a function of temperature (R-T) demonstrated that the resistance of $VO_2$ films was changed by a factor of 4 near $75^{\circ}C$ which was higher than $68^{\circ}C$ reported from a $VO_2$ bulk. We will discuss the MIT of $VO_2$ films, comparing with the local structural properties determined by XAFS measurements.

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A Novel Image Encryption using MLCA and CAT (MLCA와 CAT를 이용한 새로운 영상 암호화 방법)

  • Piao, Yong-Ri;Cho, Sung-Jin;Kim, Seok-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.10
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    • pp.2171-2179
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    • 2009
  • In this paper, we propose a novel Image Encryption using MLCA (Maximum Length Cellular Automata) and CAT (Cellular Automata Transform). Firstly, we use the Wolfram rule matrix to generate MLCA state transition matrix T. Then the state transition matrix T changes pixel value of original image according to pixel position. Next, we obtain Gateway Values to generate 2D CAT basis function. Lastly, the basis function encrypts the MLCA encrypted image into cellular automata space. The experimental results and security analysis show that the proposed method guarantees better security and non-lossy encryption.

A Study of The Voltage Transfer Function Dependent On Input Conditions For An N-Input NAND Gate (N-Input NAND Gate에서 입력조건에 따른 Voltage Transfer Function에 관한 연구)

  • Kim In-Mo;Song Sang-Hun;Kim Soo-Won
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.10
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    • pp.510-514
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    • 2004
  • In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate.

A simple analysis on the abnormal behavior of the argon metastable density in an inductively coupled Ar plasma

  • Park, Min;Yu, Sin-Jae;Kim, Jeong-Hyeong;Seong, Dae-Jin;Sin, Yong-Hyeon;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.438-438
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    • 2010
  • The abnormal behavior of the argon metastable density during the E-H mode transition in argon ICP discharge was investigated. Lots of investigations including global models expected that during and after the mode transition of ICP discharge, the density of metastable increases with applied rf power (i.e. electron density). However, recent direct measurement of metastable density revealed that the metastable density of argon decreases with the applied power during and after the mode transition. This result may not be explained by the previous global model which is based on the assumption of the Maxwellian electron energy distribution function (EEDF). In this paper, to explain this abnormal behavior with simple manners, a simple global model taking account of the effect of the non-Maxwellian EEDFs incorporating into a set of coupled rate equations is proposed. The result showed that the calculated metastable density taking account of non-Maxwellian EEDF and its evolution during the transition has an abnormal behavior with electron density and is in good agreement with the previous measurement results, indicating the close coupling of electron kinetics and the behavior of metastable density. The proposed simple model is expected to provide qualitative kinetic insight to understand the behavior of the metastable density in various plasma discharges which typically exhibit non-Maxwellian distribution.

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Noise Reduction of Image Using Sequential Method of Cellular Automata

  • Kim, Tai-Suk;Lee, Seok-Ki
    • Journal of information and communication convergence engineering
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    • v.9 no.2
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    • pp.224-229
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    • 2011
  • Cellular Automata is a discrete dynamical system that can be completely described in terms of local relation. For any given image, the system can save its features as well as increase or decrease the brightness of it locally through consideration of optimized transition in succession. These transitions in succession satisfy the function "Lyapunov" and have sequential movements. This study suggests the way of noise reduction for each image with the use of the Sequential Cellular Automata system. The mentioned transition in succession gives stable results with high-convergence performance to random noises and PSNR (Peak Signal-to-Noise Ratio) using histograms and MSE (Mean Square Error) for verification of effectiveness.

The LS$\rightarrow$HS Transition of Cobalt(III) in an Oxygen Lattice with the $K_2NiF_4$-Type Structure: Correlations with the Chemical Bonding Environment of the $(CoO_6)$ Octahedron Along the c-axis

  • Byeon, Song-Ho;Demazeau, Gerard
    • Bulletin of the Korean Chemical Society
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    • v.15 no.11
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    • pp.949-953
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    • 1994
  • In oxides characterized by the $K_2NiF_4-type$ structure, the low-spin${\to}$high-spin transition of trivalent cobalt ion was studied in function of the nature of competing bonds in the perovskite-plane and along the c-axis. Using Slichter and Drickamer's model the calculated values of parameters characterizing such a transition are correlated with the covalency of competing bonds along the c-axis of the $K_2NiF_4$-structure and the local structural distortion of the $(CoO_6)$ octahedron.

Study on Phase Transition and Response Time of Optically Compensated Splay Cell according to Pretilt Angle (선경사각에 따른 광학적 자기보상 스플레이 셀의 상전이와 응답속도 연구)

  • Hwang, Seong-Han;Jung, Byoung-Sun;Hwang, Jeoung-Yeon;Seo, Dae-Shik;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.422-423
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    • 2006
  • We have studied phase transition time and response time of optically compensated splay(OCS) cell as a function of surface pretilt angle. With decreasing surface pretilt angle, phase transition time decreases and response time becomes faster in the OCS cell. Besides, the more surface pretilt angle decreases, the easier OCS structure is obtained.

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A Simulation of the Myocardium Activation Process using the Discrete Event Cell Space Model (DEVCS 모델을 사용한 심근 활성화과정의 시뮬레이션)

  • Kim Gwang-Nyeon;Jung Dong-Keun;Kim Gi-Ryon;Choi Byeong-Cheol;Lee Jung-Tae;Jeon Gye-Rok
    • Journal of the Korea Society for Simulation
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    • v.13 no.4
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    • pp.1-16
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    • 2004
  • The modelling and simulation of the activation process for the heart system is meaningful to understand special excitatory and conductive system in the heart and to study cardiac functions because the heart activation conducts through this system. This thesis proposes two dimensional cellular automaton(CA) model for the activation process of the myocardium and conducted simulation by means of discrete time and discrete event algorithm. In the model, cells are classified into anatomically similar characteristic parts of the heart and each of cells has a set of cells with preassigned properties. Each cell in this model has state variables to represent the state of the cell and has some state transition rules to change values of state variables executed by state transition function. The state transition rule is simple as follows. First, the myocardium cell at rest stay in passive state. Second, if any one of neighborhood cell in the myocardium cell is active state then the state is change from passive to active state. Third, if cell's state is an active then automatically go to the refractory state after activation phase. Four, if cell's state is refractory then automatically go to the passive state after refractory phase. These state transition is processed repeatedly in all cells through the termination of simulation.

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Comparative Study on Classical Control and Modern Control via Analysis of Circuit-based Time Response (회로망 기반의 시간응답 해석에 따른 고전제어와 현대제어의 비교 연구)

  • Min, Yong-Ki
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.4
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    • pp.575-584
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    • 2017
  • It is suggested the circuit network to analyze the time response of control system. And it is analyzed the interrelation for classical control and modern control by the transfer function and the state equation. Without complicated integration of state transition equation, it is suggested to possible time response by combining the state transition matrix and the transfer function. A source program is coded to display the time response according to the unit-step and the sinusoidal input. Transient response is analyzed in the unit-step input and phase difference between current and voltage is analyzed in sinusoidal input. As writing the suggested contents in transient response or state-space analysis, it is improved the understanding for control engineering and ability for system design.