• Title/Summary/Keyword: transition of a function

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Molecular Dynamics Simulation of First-Order Phase Transition (일차 상변화 과정의 분자 동력학적 모사)

  • Lee, Jae-Yeon;Yoon, Woong-Sup
    • 한국연소학회:학술대회논문집
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    • 2004.11a
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    • pp.161-166
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    • 2004
  • A study of argon droplet vaporization is conducted using molecular dynamics. Instead of using traditional method such as the Navier-Stokes equation. Molecular dynamics uses Lagrangian frame to describe molecular behavior in a system and uses only momentum and position data of all molecules in the system. So every property is not a hypothetical input but a statistical result calculated from the momentum and position data. This work performed a simulation of the first-order stability for phase transition of a three dementional submicron argon droplet within quiescent environment. Lennard-Jones 12-6 potential function is used as a intermolecular potential function. The molecular configuration is examined while an initially non-sperical droplet is changed into the spherical shape and droplet evaporates or condensates.

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An investigation on the effect of the wall treatments in RANS simulations of model and full-scale marine propeller flows

  • Choi, Jung-Kyu;Kim, Hyoung-Tae
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.12 no.1
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    • pp.967-987
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    • 2020
  • A numerical analysis is carried out for the marine propellers in open water conditions to investigate the effect of the wall treatments in model and full scale. The standard wall function to apply the low of the wall and the two layer zonal model to calculate the whole boundary layer for a transition phenomenon are used with one turbulence model. To determine an appropriate distance of the first grid point from the wall when using the wall function, a formula based on Reynolds number is suggested, which can estimate the maximum y+ satisfying the logarithmic law. In the model scale, it is confirmed that a transition calculation is required for a model scale propeller with low Reynolds number that the transient region appears widely. While in the full scale, the wall function calculation is recommended for efficient calculations due to the turbulence dominant flow for large Reynolds number.

Supersate Transition Matrix for the Generalized Transfer Function Method (일반화된 전달함수방법을 위한 초상태 천이행렬)

  • Jin, Ik-Soo;Cho, Kwan;Ahn, Jae-Young;Lee, Jin-Ho;Whang, Keum-Chan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.1
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    • pp.187-195
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    • 1996
  • The purpose of this paper is to provide an algorithm in which the procedure of constructing a superstate transition matrix for trellis codes is reduced and, as a result, make it easier to evaluate the performance of a TCM scheme when the generalized transfer function method is used. In this paper, an algorithm for constructing a superstate transition matrix and an algorithm for reducing the matrix easily are addressed and applied to an MTCM scheme as an example. It is shown that the algorithm is very useflul for trellis codes with a large number of states and/or parallel transitions.

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Thickness Estimation of Transition Layer using Deep Learning (심층학습을 이용한 전이대 두께 예측)

  • Seonghyung Jang;Donghoon Lee;Byoungyeop Kim
    • Geophysics and Geophysical Exploration
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    • v.26 no.4
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    • pp.199-210
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    • 2023
  • The physical properties of rocks in reservoirs change after CO2 injection, we modeled a reservoir with a transition zone within which the physical properties change linearly. The function of the Wolf reflection coefficient consists of the velocity ratio of the upper and lower layers, the frequency, and the thickness of the transition zone. This function can be used to estimate the thickness of a reservoir or seafloor transition zone. In this study, we propose a method for predicting the thickness of the transition zone using deep learning. To apply deep learning, we modeled the thickness-dependent Wolf reflection coefficient on an artificial transition zone formation model consisting of sandstone reservoir and shale cap rock and generated time-frequency spectral images using the continuous wavelet transform. Although thickness estimation performed by comparing spectral images according to different thicknesses and a spectral image from a trace of the seismic stack did not always provide accurate thicknesses, it can be applied to field data by obtaining training data in various environments and thus improving its accuracy.

Metal-insulator Transition in Low Dimensional $La_{0.75}Sr_{0.25}VO_3$ Thin Films

  • Huynh, Sa Hoang;Dao, Tran M.;Mondal, Partha S.;Takamura, Y.;Arenholz, E.;Lee, Jai-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.19.1-19.1
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    • 2011
  • We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

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Detection of Stuck-Open Faults in BiCMOS Circuits using Gate Level Transition Faults (게이트 레벨 천이고장을 이용한 BiCMOS 회로의 Stuck-Open 고장 검출)

  • 신재흥;임인칠
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.198-208
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    • 1995
  • BiCMOS circuit consist of CMOS part which constructs logic function, and bipolar part which drives output load. Test to detect stuck-open faults in BiCMOS circuit is important, since these faults do sequential behavior and are represented as transition faults. In this paper, proposes a method for efficiently detecting transistor stuck-open faults in BiCMOS circuit by transforming them into slow-to=rise transition and slow-to-fall transition. In proposed method, BiCMOS circuit is transformed into equivalent gate-level circuit by dividing it into pull-up part which make output 1, and pull-down part which make output 0. Stuck-open faults in transistor are modelled as transition fault in input line of gate level circuit which is transformed from given circuit. Faults are detceted by using pull-up part gate level circuit when expected value is '01', or using pull-down part gate level circuit when expected value is '10'. By this method, transistor stuck-open faults in BiCMOS circuit are easily detected using conventional gate level test generation algorithm for transition fault.

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The Functional Transition of Traditional Shop House in Modern age of Korea - Focused on Maehwa Marketplace in Uljin - (전래 시장옥(市場屋)의 기능적 변화특성에 관한 연구 -경북 울진군 매화1리 매화장시를 중심으로-)

  • Park, Chung-Shin;Roh, Seon-hwa;Kim, Tai-young
    • Journal of the Korean Institute of Rural Architecture
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    • v.10 no.4
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    • pp.33-40
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    • 2008
  • This paper aims to clarify the spatial form and functional transition of Korean traditional shop house in Maehwa marketplace, Uljin. The general form of Korean traditional shop house of Maehwa marketplace was the timbered house of the tin roof built in the 1960s. As the scale of a building being comparatively small-scale, building area is $60m^2$ and the yard was mainly made behind the building. When the spatial form of Korean traditional shop house is considered, the composition of 4 by 2 is most. And in the front of a building, the shop is located, and when the back of a building prepares a residence, integration of a sales function and a habitation function is seen. The shop of Korean traditional shop house is converted into living space by change of the function, and the position is the middle of a front of building. This is considered as what inherited the Korean lifestyle. And the last, Although it is not different from the appearance of the shop house of other areas, since there are few grades of the change in comparison, the extension situation of Korean traditional shop house is recognized as an example important for future research.

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Oxygen Deficiency, Hydrogen Doping, and Stress Effects on Metal-Insulator Transition in Single-Crystalline Vanadium Dioxide Nanobeams

  • Hong, Ung-Gi;Jang, Seong-Jin;Park, Jong-Bae;Bae, Tae-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.424.1-424.1
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    • 2014
  • Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

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Role of the Strain Energy in Diffuse Phase Transition of (Pb, Ba)(Zr, Ti)O3 ((Pb, Ba) (Zr, Ti)O3계의 확산된 상전이에 있어서 Strain Energy의 역할)

  • 이재찬;주웅길
    • Journal of the Korean Ceramic Society
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    • v.24 no.6
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    • pp.586-592
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    • 1987
  • The role of the strain energy and phase stability in the diffuse phase transition have been investigated in the highly disordered solid solution, (Pb1-xBax)(Zr0.4Ti0.6)O3 (0.2 x 0.4). X-ray diffraction analysis indicates that tetragonality (c/a) decreases with the increasing Ba content. Also as the Ba content increases, phase transition becomes more diffuse and at the same time dielectric relaxation as a function of measured frequencies in the 1KHz-10MHz range occurs very pronouncedly. In the Ba content range, 0.2 x 0.35, hysteresis loops are routinely observed and the loop is observed to narrow shape as the Ba content increases but becomes very slim at 40mol% Ba content. Moreover thermal analysis shows that there is no abrupt change in the thermal expansion coefficient below the apparent transition temperature at which dielectric constant becomes maximum. From the above results, it has been concluded that creation of the strain energy due to the distorthion that occurred during the phase transition suppresses diffuse phase transition.

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The Effect of External Noise on Dynamic Behaviors of the Schlogl Model with the Second Order Transition for a Photochemical Reaction

  • 김경란;Lee, Dong J.;신국조
    • Bulletin of the Korean Chemical Society
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    • v.16 no.11
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    • pp.1119-1121
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    • 1995
  • The method for the Schlo"gl model with the first order transition is extended to the Scho;gl model with the second order transition for a photochemical reaction. We obtain the explicit results of the time-dependent average and the time correlation function at the unstable steady state of the model in the neighborhood of the Gaussian white noise and then discuss the effect of noise on the dynamic properties.