• Korean Journal of Materials Research
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• v.27 no.10
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• pp.557-562
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• 2017

The microstructural evolution and modulation of mechanical properties were investigated for a $Ti_{65}Fe_{35}$ hypereutectic alloy by addition of $Bi_{53}In_{47}$ eutectic alloys. The microstructure of these alloys changed with the additional BiIn elements from a typical dendrite-eutectic composite to a bimodal eutectic structure with primary dendrite phases. In particular, the primary dendrite phase changed from a TiFe intermetallic compound into a ${\beta}$-Ti solid solution despite their higher Fe content. Compressive tests at room temperature demonstrated that the yield strength slightly decreased but the plasticity evidently increased with an increasing Bi-In content, which led to the formation of a bimodal eutectic structure (${\beta}$-Ti/TiFe + ${\beta}$-Ti/BiIn containing phase). Furthermore, the (Ti65Fe35)95(Bi53In47)5 alloy exhibited optimized mechanical properties with high strength (1319MPa) and reasonable plasticity (14.2 %). The results of this study indicate that the transition of the eutectic structure, the type of primary phases and the supersaturation in the ${\beta}$-Ti phase are crucial factors for controlling the mechanical properties of the ultrafine dendrite-eutectic composites.

• Journal of the Mineralogical Society of Korea
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• v.19 no.2 s.48
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• pp.81-88
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• 2006

The Yttria Partially Stabilized Zirconia powder was prepared by spontaneous precipitation method using $ZrOCl_2{\cdot}8H_O-YCl_33{\cdot}6H_2O$ solution as a starting materials. The optimal experimental conditions such as concentration and pH of starting solutions, the amounts of stabilizer $Y_2O_3$ used, and sintered temperature were carefully studied. The best condition for synthesizing $ZrO_2$ was experimentally selected and applied throughout this study for the preparation of the 3 mole% $Y_2O_3$ partially stabilized zirconia, 3YSZ. The physical properties of 3YSZ was examined by XRD, Raman, DT A, and SEM. The structural transition from pure monoclinic high temperature $ZrO_2$ to tetragonal room temperature 3YSZ was made possible by the added amount of $Y_2O_3$ in the $ZrO_2+Y_2O_3$ system. All Raman Spectrum band appeared in the lower wave numbers rather than in higher wave numbers as structure changes from monoclinic to tetragonal.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.737-743
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• 1998

The synthesis of $SrAI_2O_4:Eu^{2+}$ phosphor and its properties of both photoluminescence and long-phosphorescent were investigated as a function of sintering condition. Single phase of $SrAl_2O_4$ was obtained by sintering the mixtures of $SrCO_3$, $Eu_2O_3$, $AI_2O_34 and 3wt% $B_2O_3$ powders over 100$0^{\circ}C$ in Ar/H2 atmosphere. The optimum sintering condition for the long-phosphorescent phosphor of $SrAI_2O_4:Eu^{2+}$ was found at 130$0^{\circ}C$ for 3hours. The PL emission spectrum of $SrAI_2O_4:Eu^{2+}$ shows a maximum peak intensity at 520nm(2.384eV) with a broad emission extending from 450 to 650nm which resulted from the $4f^65d^1$$\rightarrow$$4f^7$ transition of $Eu^{+2}$ under 360nm exitation. Monitored at 520nm. the excita¬tion spectrum of $SrAI_2O_4:Eu^{2+}$ exhibits a maximum peak intensity at 360nm (3.44eV) with a broad absorption band extending from 250 to 480nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.113-113
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• 2000

직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

• Journal of the Korean Society of Radiology
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• v.13 no.3
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• pp.445-451
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• 2019

The fluorescence intensity and fluorescence lifetime of $Ba_2GdV_3O_{11}$, a vanadate compound based on $Ba^{2+}$ ion, were investigated by adding $Eu^{3+}$ as a rare earth ion which is an alkaline earth metal, which is distributed around active ions and has a large influence on fluorescent properties when used as a host in a phosphor. $Ba_2GdV_3O_{11}:Eu^{3+}$ phosphor was synthesized by solid state method and the crystallinity of the phosphor was confirmed by X - ray diffraction analysis. The fluorescence properties of the $Ba_2GdV_3O_{11}:Eu^{3+}$ phosphor were measured using optical and laser. The energy transfer and diffusion of the $Ba_2GdV_3O_{11}:Eu^{3+}$ phosphor are highly dependent on the concentration of $Eu^{3+}$. When the concentration of $Eu^{3+}$ is low, it shows strong fluorescence to the CT band. However, as the concentration of $Eu^{3+}$ increases, the fluorescence due to 4f - 4f transition is strong. The concentration of $Eu^{3+}$ ion increased and the energy between ions was diffused, and the lifetime of fluorescence decreased. Energy transfer occurs between two $Eu^{3+}$ ions at low $Eu^{3+}$ concentration and energy diffusion occurs at high $Eu^{3+}$ concentration.

• Journal of the Korean Society of Radiology
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• v.15 no.3
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• pp.391-399
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• 2021

Eu²⁺ doped polyphosphate NaSr(PO₃)₃ blue-emitting phosphors were synthesized by the conventional solid state method in a reductive atmosphere. The phase formation of NaSr(PO₃)₃ phosphors were characterized by using the X-ray powder diffraction (XRD) measurement. The photoluminescence emission and excitation spectra of the NaSr(PO₃)₃:Eu²⁺ phosphor, and decay curves were measured. Under the near-UV excitation, the phosphor exhibits a band emission around 420 nm assigned to the 4f⁶5d→f7(8S^7/2) transition of Eu²⁺. The temperature dependent emission spectra and decay curves were measured to elevate the thermal properties of the Eu²⁺ doped phosphors. The as-prepared NaSr(PO₃)₃:Eu²⁺ phosphors show a strong temperature dependent performance, which can serve as a promising temperature sensor.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Korean Journal of Heritage: History & Science
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• v.44 no.4
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• pp.86-111
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• 2011

Wan is a tableware in which boiled rice or soup, side dish are put, and it is a representative model which shows the development of personal tableware. From the establishing period of Hanseong Baekje, the form of wan which is Jung-do Style(中島式) Plain Pottery of previous period Proto-Three Kingdoms Period was succeeded to, but wan is produced and used as a wan baked in the kiln, which is far development of the producing technique including hardness and clay. By and large, the size of $0.3{\sim}0.4{\ell}$ was the majority and the production technique of wan which used carefully selected soft quality clay are largely confirmed to be two methods which are, first, basic method by which on a clay tablet on the rotating table, clay band is accumulated and moulding is finished, and second, the new method which had the same basic moulding as that of basic method but in the last stage takes wan off the rotating table and reverse it to trim the bottom and remove the angle of flat bottom. The former, basic production method is the classical production method since wan of Jung-do Style Plain Pottery and wan was produced and used for all periods of Hanseong Baekje. On the other hand, the latter is the production method obtained through form imitation of China made porcelain flowed into through interchange between Baekje and China, and through comparison with Chinese chronogram material it is estimated to have been produced and used after middle of 4th century. Therefore it can be known that the Baekje people's demand for China made articles was big and imitation pottery was produced and used with Baekje pottery. In addition, bowl with outward mouth are confirmed in multiple number in Lakrang(樂浪) pottery wan and it is assumed that wan was the form produced under the influence.