• KIEE International Transactions on Electrophysics and Applications
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• 제5C권1호
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• pp.18-22
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• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• 전자공학회논문지D
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• 제35D권6호
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• pp.37-45
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• 1998

본 논문에서는 본 연구진이 개발 중인 INPROS 3차원 반도체 공정 시뮬레이터 시스템에 이온주입된 불순물의 과도 확산(TED, transient enhanced diffusion) 기능을 첨가하여 수행한 계산 결과를 발표한다. 실리콘 내부에 이온주입된 불순물의 재분포를 시뮬레이션하기 위하여, 먼저 몬테카를로 방법으로 이온주입 공정을 수행하였고, 유한요소법을 이용하여 확산 공정을 수행하였다. 저온 열처리 공정에서의 붕소의 과도 확산을 확인하기 위하여, 에피 성장된 붕소 에피층에 비소와 인을 이온 주입시킨 후, 750℃의 저온에서 2시간 동안 열처리 공정을 수행하였다. 3차원 INPROS 시뮬레이터의 결과와 실험적으로 측정한 SIMS 데이터와 그 결과가 일치함을 확인하였다. INPROS의 점결함 의존성 과도 증속 확산 모델과 소자 시뮬레이터인 PISCES를 이용하여 역 단채널 길이 효과(RSCE, reverse short channel effect)를 시뮬레이션하였다.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.211-214
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• 2004

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidationenhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data and $0.13 {\mu}m$ device characteristics such as $V_{th}$ and $Id_{sat}$ with errors less than $5 \%$ between simulation and experiment.

• 한국진공학회지
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• 제12권4호
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• pp.239-250
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• 2003

실리콘-게르마늄 이종접합 바이폴라 트랜지스터 (SiGe HBT)에서 발생하는 신뢰성 열화 현상을 고찰하였다. SiGe HBT의 경우에 전류이득 감소, AC특성 저하, 오프셋 전압이 자주 관찰되는데 그 원인으로는 각각 에미터-베이스 역 바이어스 전압 스트레스, 과도촉진확산 (transient enhanced diffusion), 공정 변동 (fluctuation)에 따른 베이스-콜렉터 접합 특성 저하를 들 수 있다. 에미터-베이스 접합에 역 바이어스 전압 스트레스가 걸리면 에미터-베이스 접합면의 테두리 부분에서 높은 에너지를 가지는 전자와 정공들이 생성되고, 이들 전자와 정공들이 실리콘-산화막 계면 및 산화막 내부에 전하를 띈 트랩을 생성하기 때문에 재결합에 의한 베이스 누설전류가 증가하여 소자의 전류이득은 크게 감소하게 된다. 에미터-베이스 접합과 외부 베이스의 거리가 임계 값보다 짧을 때에는 소자의 차단주파수($f_t$)가 감소하게 되는데 이것은 외부 베이스 이온주입에 의하여 내부 베이스 내의 도펀트의 확산이 촉진되어 나타나는 현상이다. 외부 베이스 이온주입 에너지가 충분하지 않은 경우에는 콜렉터-베이스 접합의 턴온 전압이 감소하여 전류-전압 특성 곡선에서 오프셋 전압이 발생하게 된다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.31-34
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• 2003

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data with errors less than 5% between simulation and experiment.

• 대한기계학회논문집B
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• 제21권10호
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• pp.1303-1313
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• 1997

A micro-macroscopic analysis on the conduction-controlled directional casting of Al-Cu alloys is performed, in which emphases are placed on the microstructural features. In order to facilitate the solution procedure, an iterative micro-macroscopic coupling algorithm is developed. The predicted results show that the effect of finite back diffusion on the transient solidification process in comparison with the lever rule depends essentially on the initial concentration of an alloy. In the final casting, the eutectic fraction is distributed in an increasing-decreasing-increasing pattern, each mode of which is named the chill, interior and end zones. This nonuniformity per se suffices to justify the necessity of this work because it originates from the combined effects of finite back diffusion and cooling path-dependent nature of the eutectic formation. As the cooling rate is enhanced, not only the influence depths of boundaries narrow, but also the eutectic fractions in the chill and interior zones increase. In addition, it is revealed for the first time that the micro segregation band is formed in response to a sudden change in cooling rate during the directional casting. An increasing change creates an overshooting band in the eutectic fraction distribution, and vice versa.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.81.2-81.2
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• 2011

The gas diffusion layer (GDL) consists of two main parts, the GDL backing layer, called as a substrate and the micro porous layer (MPL) coated on the GDBL. In this process, carbon particles of MPL penetrates to the GDBL consequently forms MPL penetration part. In this study, the micro porous layer (MPL) penetration thickness is determined as a design parameter of the GDL which affect pore size distribution profile through the GDL inducing different mass transfer characteristics. The pore size distribution and water permeability characteristics of the GDL are investigated and the cell performance is evaluated under fully/low humidification conditions. Transient response and voltage instability are also studied. In addition, to determine the effects of MPL penetration on the degradation, the carbon corrosion stress test is conducted. The GDL that have deep MPL penetration thickness shows better performance in high current density region because of enhanced water management, however, loss of penetrated MPL parts is shown after aging and it induces worse water management characteristics.

• ETRI Journal
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• 제25권4호
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• 전자공학회논문지D
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• 제36D권3호
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• pp.48-58
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• 1999

본 연구에서는 3차원 반도체 공정 시뮬레이션의 효율성과 성능을 향상시키기 위하여, 병렬 유한요소법 수치해석에 사용이 적합한 디라우니 병렬 메쉬 생성기 및 표면 전진 메쉬 생성기를 개발하였고, 이를 위하여 개선된 성능을 보이는 수정된 하부구조법 병렬 유한요소법 수치해석기를 개발하였다. 또한, 행렬 계산 알고리즘의 병렬화를 확산 및 산화 시뮬레이터에 적용하여, 직렬 계산 시 3시간이 소요되는 확산 시뮬레이션과 비평탄 구조를 지니는 R-LOCOS 등의 연산을 8개의 프로세서를 병렬로 사용하여 15분만에 계산하였다. 과다한 계산 시간을 요하는 몬테카를로 수치해석 방법의 효율성을 높이고자, 병렬 연산 알고리즘을 몬테카를로 연산에 적용하였다. 또한, 스퍼터링 증착장치 시스템의 타켓 입자 분포 특성을 병렬 연산 몬테카를로 방식으로 계산하였다. 3000개의 이온을 주입하였을 겨우 단일 프로세서에서 13,000초의 계산시간이 소요되었으나, 30개의 프로세서를 병렬로 사용하였을 때 520초의 시간을 소비하여,25 이상의 스피드업 특성을 얻었다. 또한, 몬테카를로 계산의 최적화 연구를 통해서 3차원 스퍼터링 증착장치에서 연쇄 충돌 계산 수행시의 최적이온의 개수는 30,000임을 확인하였다.

• Journal of Pharmaceutical Investigation
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• 제40권3호
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• pp.167-173
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• 2010

Repeated oral administration of hydrochlorothiazide, a loop diuretic, due to transient high blood levels, may cause adverse effects such as gastric disturbance, nausea, high blood sugar, and hyper lipidemia. Transdermal administration could avoid some of these systemic side effects and gastric disorders. We have developed a matrix using ethylene-vinyl acetate (EVA), a heat-processible and flexible material, for transdermal delivery of hydrochlorothiazide. Drug solubility was highest at 40% PEG-400 volume fraction. Drug release increased as concentration increased with a linear relationship between the release rate and the square root of loading dose. Increasing temperature increased drug release from the EVA matrix. The activation energy, measured from the slope of log P versus 1000/T, was 11.9 kcal/mol for a 2.5% loading dose from EVA matrix. Diethyl phthalate had the highest plasticizing effects on the release of hydrochlorothiazide. To increase the skin permeation of hydrochlorothiazide from the EVA matrix, enhancers such as the saturated fatty acids, the unsaturated fatty acids, and the non-ionic surfactants were added to the EVA matrix, and skin permeation was evaluated using a modified Keshary-Chien diffusion cell fitted with intact excised rat skin. Polyoxyethylene 23-lauryl ether showed the highest enhancing effects. In conclusion, transdermal delivery of hydrochlorothiazide could be improved from an EVA matrix containing plasticizer and permeation enhancer.