• KIEE International Transactions on Electrophysics and Applications
• /
• v.5C no.1
• /
• pp.18-22
• /
• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.6
• /
• pp.37-45
• /
• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.6
• /
• pp.211-214
• /
• 2004

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidationenhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data and $0.13 {\mu}m$ device characteristics such as $V_{th}$ and $Id_{sat}$ with errors less than $5 \%$ between simulation and experiment.

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.239-250
• /
• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.31-34
• /
• 2003

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data with errors less than 5% between simulation and experiment.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.21 no.10
• /
• pp.1303-1313
• /
• 1997

A micro-macroscopic analysis on the conduction-controlled directional casting of Al-Cu alloys is performed, in which emphases are placed on the microstructural features. In order to facilitate the solution procedure, an iterative micro-macroscopic coupling algorithm is developed. The predicted results show that the effect of finite back diffusion on the transient solidification process in comparison with the lever rule depends essentially on the initial concentration of an alloy. In the final casting, the eutectic fraction is distributed in an increasing-decreasing-increasing pattern, each mode of which is named the chill, interior and end zones. This nonuniformity per se suffices to justify the necessity of this work because it originates from the combined effects of finite back diffusion and cooling path-dependent nature of the eutectic formation. As the cooling rate is enhanced, not only the influence depths of boundaries narrow, but also the eutectic fractions in the chill and interior zones increase. In addition, it is revealed for the first time that the micro segregation band is formed in response to a sudden change in cooling rate during the directional casting. An increasing change creates an overshooting band in the eutectic fraction distribution, and vice versa.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.81.2-81.2
• /
• 2011

The gas diffusion layer (GDL) consists of two main parts, the GDL backing layer, called as a substrate and the micro porous layer (MPL) coated on the GDBL. In this process, carbon particles of MPL penetrates to the GDBL consequently forms MPL penetration part. In this study, the micro porous layer (MPL) penetration thickness is determined as a design parameter of the GDL which affect pore size distribution profile through the GDL inducing different mass transfer characteristics. The pore size distribution and water permeability characteristics of the GDL are investigated and the cell performance is evaluated under fully/low humidification conditions. Transient response and voltage instability are also studied. In addition, to determine the effects of MPL penetration on the degradation, the carbon corrosion stress test is conducted. The GDL that have deep MPL penetration thickness shows better performance in high current density region because of enhanced water management, however, loss of penetrated MPL parts is shown after aging and it induces worse water management characteristics.

• ETRI Journal
• /
• v.25 no.4
• /
• pp.247-252
• /
• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.3
• /
• pp.48-58
• /
• 1999

In this paper, a new parallel computation method, which fully utilize the parallel processors both in mesh generation and FEM calculation for 2D/3D process simulation, is presented. High performance parallel FEM and parallel linear algebra solving technique was showed that excessive computational requirement of memory size and CPU time for the three-dimensional simulation could be treated successively. Our parallelized numerical solver successfully interpreted the transient enhanced diffusion (TED) phenomena of dopant diffusion and irregular shape of R-LOCOS within 15 minutes. Monte Carlo technique requires excessive computational requirement of CPU time. Therefore high performance parallel solving technique were employed to our cascade sputter simulation. The simulation results of Our sputter simulator allowed the calculation time of 520 sec and speedup of 25 using 30 processors. We found the optimized number of ion injection of our MC sputter simulation is 30,000.

• Journal of Pharmaceutical Investigation
• /
• v.40 no.3
• /
• pp.167-173
• /
• 2010

Repeated oral administration of hydrochlorothiazide, a loop diuretic, due to transient high blood levels, may cause adverse effects such as gastric disturbance, nausea, high blood sugar, and hyper lipidemia. Transdermal administration could avoid some of these systemic side effects and gastric disorders. We have developed a matrix using ethylene-vinyl acetate (EVA), a heat-processible and flexible material, for transdermal delivery of hydrochlorothiazide. Drug solubility was highest at 40% PEG-400 volume fraction. Drug release increased as concentration increased with a linear relationship between the release rate and the square root of loading dose. Increasing temperature increased drug release from the EVA matrix. The activation energy, measured from the slope of log P versus 1000/T, was 11.9 kcal/mol for a 2.5% loading dose from EVA matrix. Diethyl phthalate had the highest plasticizing effects on the release of hydrochlorothiazide. To increase the skin permeation of hydrochlorothiazide from the EVA matrix, enhancers such as the saturated fatty acids, the unsaturated fatty acids, and the non-ionic surfactants were added to the EVA matrix, and skin permeation was evaluated using a modified Keshary-Chien diffusion cell fitted with intact excised rat skin. Polyoxyethylene 23-lauryl ether showed the highest enhancing effects. In conclusion, transdermal delivery of hydrochlorothiazide could be improved from an EVA matrix containing plasticizer and permeation enhancer.