• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.31-36
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• 2007

A saw-tooth waveform generator whose frequency can be controlled with a do bias current is proposed. The generator utilizes operational transconductance amplifiers (OTA's) as switching element. It features simple and wide sweep capability The circuit built with commercially avaliable components exhibits good linearity of current-to-frequency transfer characteristics and relatively low temperature sensitivity.

• Journal of Electrical Engineering and information Science
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• v.2 no.5
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• pp.129-133
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• 1997

A circuit model for a field emission triode has been proposed. The model parameters have been extracted from he fabricated silicon tip array and verified by comparing with the results simulated by circuit simulator(SPICE). The cut-off frequency can be calculated from the parametric capacitance and the transconductance values extracted from measurements. For the field emission triode, the capacitance of 3.45fF/tip and the transconductance of 0.94nS/tip have been measured under the emission current of 4.1nA/tip. From these values, the cut-off frequency is predicted to be 43 kHz but th measured one came out to be 6 kHz. because o the parasitic capacitance components.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.287-291
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• 2005

We have investigated and tried to improve the characteristics of the thin $HfO_2$ layer deposited by ALD for fabricating a MOSFET device where the $HfO_2$ film worked as the gate dielectric. The substrate of MOSFET device is p-type (100) silicon wafer over which the $HfO_2$ dielectric layer with thickness of $5\~6\;nm$ has been deposited. Then the $HfO_2$ film was annealed with $1\~20\;atm\;H_2$ gas and subsequently aluminum electrodes was made so that the active area was $5{\times}10^{-5}\;cm^2$. We have found out that the drain current and transconductance increased by $5\~10\%$ when the $H_2$ gas pressure was 20 atm, which significantly contributed to the reliable operation of the high-density MOSFET devices.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.5 s.311
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• pp.28-35
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• 2006

This paper presents a new 3.3-1 V synchronous buck DC/DC converter that employs CMOS operational transconductance amplifiers (OTAs) as circuit-building blocks. An error amplifier OTA in a PWM circuit is compensated for to improve temperature stability. The temperature coefficient of the transconductance gain of the compensated OTA is less than $150\;ppm/^{\circ}C\;over\;0-100^{\circ}C$. The HSPICE simulation results of the $0.3{\mu}m$ standard CMOS technology show that the efficiency of the proposed converter is as high as 80% in the load current range of 40-125 mA. These results show that the proposed converter is adequate for use in battery-operated systems.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.6
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• pp.30-38
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• 1998

In this paper, a new CMOS current-mode integrator is proposed that can apply the basic building block of the low-voltage high frequency current-mode active filter. And tuning circuits that control the gain and unity gain frequency of them is designed. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined transconductance and MOSFET gate capacitance can be expanded by the proposed integrator. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time integrator with NMOS-gm. And also, cut-off frequency and gain of the active filter can be controlled with the designed tuning circuit. From the result, we can reduce errors on fabrication. And then, 3rd-order low-pass active filter is designed as an application circuits. These results are verified by the small signal analysis and the 0.8$\mu\textrm{m}$ parameter HSPICE simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.1-5
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• 2011

In this paper, we investigated the characteristics of AlGaN/GaN HEMTs to optimize their DC and RF characteristics by using a two-dimensional device simulator. First, we analyzed the variation of the DC characteristics with respect to the variation of 2DEG concentrations when varying the Al mole fraction and the thickness of the AlGaN layer. Then, we examined the variation of the RF characteristics by varying the size and the location of the gate, source and drain electrodes. When the Al mole fraction increased from 0.2 to 0.45, both the transconductance and I-V characteristics increased. On the other hand, the I-V characteristics were improved but transconductance was decreased as the thickness of the AlGaN layer increased from 10nm to 50nm. In the RF characteristics, the gate length was found to be the most influential parameter, and the RF characteristics were improved when the gate length was shorten.

• Journal of IKEEE
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• v.24 no.1
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• pp.284-292
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• 2020

SiC-based devices perform well in high-voltage environments of more than 1200V compared to silicon devices, and are particularly stable at very high temperatures. Therefore, 1700V UMOSFET has been actively researched and developed for the use of electric power systems such as electric vehicles and aircrafts. In this paper, we analysed thermal variations of critical variables (breakdown voltage (BV), on-resistance (R_on), threshold voltage (v_th), and transconductance (g_m)) for the three type 1700V UMOSFETs-Conventional UMOSFET (C-UMOSFET), Source Trench UMOSFET (ST-UMOSFET), and Local Floating Superjunction UMOSFET (LFS-UMOSFET). All three devices showed BV increase, R_on increase, v_th decrease, and g_m decrease with increasing temperature. However, there are differences in BV, R_on, v_th, g_m according to the structural differences of the three devices, and the degree and cause of the analysis were compared. All results were simulated using sentaurus TCAD.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.47-55
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• 2012

A discrete-time(DT) filter with high-order temporal moving average(TMA) using actively-weighted charge sampling is proposed in this paper. To obtain different weight of sampled charge, the variable transconductance OTA is used prior to charge sampler, and the ratio of charge can be effectively weighted by switching the control transistors in the OTA. As a result, high-order TMA operation can be possible by actively-weighted charge sampling. In addition, the transconductance generated by the OTA is relatively accurate and stable by using the size ratio of the control transistors. The high-order TMA filter has small size, increased voltage gain, and low parasitic effects due to the small amount of switches and sampling capacitors. It is implemented in the TSMC $0.18-{\mu}m$ CMOS process by TMA-$2^2$. The simulated voltage gain is about 16.7 dB, and P1dB and IIP3 are -32.5 dBm and -23.7 dBm, respectively. DC current consumption is about 9.7 mA.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.1
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• pp.40-48
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• 2000

1A novel bipolar linear transconductor and its application to operational transconductance amplifier(OTA) for low-voltage low-power signal processing is proposed. The transconductor consists of a npn differential-pair with emitter degeneration resistor and a pnp differential-pair connected to the npn differential-pair in cascade. The bias current of the pnp differential-pair is used with the output current of the npn differential-pair for wide linearity and temperature stability. The OTA consists of the linear transconductor and a translinear current cell followed by three current mirrors. The proposed transconductor has superior linearity and low-voltage low-power characteristics when compared with the conventional transconductor. The experimental results show that the transconductor with transconductance of 50 ${\mu}S$ has a linearity error of less than ${\pm}$0.06% over an input voltage range from -2V to +2V at supply voltage ${\pm}$3V. Power dissipation of the transconductor was 2.44 mW. A prototype OTA with a transconductance of 25 ${\mu}S$ has been built with bipolar transistor array. The linearity of the OTA was same as the proposed transconductor. The OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 0.5 S/A.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.663-666
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• 1998

A triangular/square waveforms generator with current controllable frequency is described. The genertor utilizes operational transconductance amplifiers as switching elements. The circuit built with commercially available components exhibits good linearity of current to frequency and relatively low temperature sensitivity.