• Journal of the Korean GEO-environmental Society
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• v.23 no.12
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• pp.17-23
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• 2022

This paper analyze the precast panel retaining wall's safety factor changes based on the numerical analysis using PLAXIS 2D software. Numerical analysis conditions include construction method, nail and panel fixing method, backfill material compaction conditions, rainfall conditions. The classification according to the construction method of the precast panel retaining wall includes the top-down and bottom-up methods. The difference between the top-down and bottom-up methods is the presence or absence backfill material and the ground excavation method. The top-down method involves vertically excavating the ground and attaching the panel using mortar, but in the bottom-up method, the ground is vertically excavated and harden the backfill material. As a result of numerical analysis, the top-down method secured a higher safety factor in all cases except the rainfall conditions.

• Journal of the Korean Society of Clothing and Textiles
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• v.38 no.1
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• pp.46-58
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• 2014

This study investigated the difference of clothing-behavior for the same occasions in terms of a cross-cultural context. It analyzed clothing items worn by TED speakers via video at TED.com in the US, UK, France, Japan, and South Korea from October to December 2012. An analysis on the 233 videos showed considerable differences among countries. American speakers wore casual items on the top and formal wear on the bottom. Most British speakers wore the same styles on the top and the bottom outfits such as 'formal-top & formal-bottom' or 'casual-top & casual-bottom'. French speakers chose mix and match styles. Japanese and Koreans selected the same styles on the top and the bottom outfits such as 'formal-top & formal-bottom' or 'casual-top & casual-bottom'. In particular, Japanese speakers selected various casual items more than other countries' speakers. Korean senior speakers had a preference to wear more formal clothing and young people liked more casual attachments. This study found that clothing attachments differed by cultural context and generation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.212-212
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• 2003

Many of the spin valve multilayer structures with FeMn as antiferromagnetic layer consist of a NiFe/FeMn/NiFe trilayer where the bottom NiFe layer is the seed layer to facilitate the growth of (111) gama-FeMn antiferromagnetic phase and the top NiFe layer forms the pinned layer[1], In this study, exchange bias of bottom NiFe layer has been investigated as functions of thicknesses of top and bottom NiFe in NiFe/FeMn/NiFe, prepared by rf magnetron sputtering, MH-loop was measured by vibration sample magnetometer (VSM). Two hysteresis loops are corresponded to bottom and top layers, similar to reported loops in spin valve structure. Exchange bias of bottom NiFe could be induced by the interfacial coupling between bottom NiFe and FeMn. But those coupling are strongly dependent on the top and bottom NiFe thicknesses, revealing anomalous character ul exchange bias of bottom NiFe layer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.3
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• pp.571-576
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• 2016

Asymmetric double gate(DG) MOSFET has the different top and bottom gate oxides thicknesses. It is analyzed the deviation of subthreshold swing(SS) and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric DGMOSFET. SS varied along with conduction path, and conduction path varied with top and bottom gate oxide thickness. The asymmetric DGMOSFET became valuable device to reduce the short channel effects like degradation of SS. SSs were obtained from analytical potential distribution by Poisson's equation, and it was analyzed how the ratio of top and bottom oxide thickness influenced on conduction path and SS. SSs and conduction path were greatly influenced by the ratio of top and bottom gate oxide thickness. Bottom gate voltage cause significant influence on SS, and SS are changed with a range of 200 mV/dec for $0<t_{ox2}/t_{ox1}<5$ under bottom voltage of 0.7 V.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 1997.11a
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• pp.146-153
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• 1997

An experimental study was performed of natural-convection downward smolder spread across a sawdust bed peripherally enclosed with an insulating container, to examine the effect of the open- ing condition at the top end on downward smolder spread. Experiments were conducted by using relatively coarse sawdust and 25-cm-long cylindrical container The variations of temperature profiles along the bed axis with time were determined far different opening conditions and were com-pared with those in smolder spread from open top to open bottom. It was shown that the smolder zone initiated from open top toward closed bottom penetrates the bed with keeping high peak temperature like the case of open top to open bottom spread, although mean spread rate is smaller. This indicates that the downward smolder zone can be sustained stably if sufficient air or oxygen Is supplied from the back of it by natural convection even if upward draft entering from the bottom of the bed is absent. When the top end was partially closed by mounting a cover after stable smolder spread had begun from open top toward open bottom, the temperature at the peak decreased more than 200 K and the smolder zone became to spread with thickening residue. In this case, the shape of temperature profiles continuously changed or decayed until end-effect at the open bottom end enhanced the reaction. The temperature at the shrunk peak, free from the end-effect, was almost identical with the temperature at the exothermic oxidative-degradation zone in smolder spread from open top to open bottom. from these results, it can be inferred for natural-convection downward smolder spread that the oxidation reaction of the char is very sensitive to the oxygen supply by natural convection in the space above the smolder zone, and that the top end opening condition strongly alters the completeness of reactions, structure, and behavior of the smolder zone.

• Proceedings of the Korea Contents Association Conference
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• 2006.05a
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• pp.431-435
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• 2006

Panoramic Image provides wider field of view than image from acquisition equipment such as a camera and provides realism and immersion to users compared with single image. Cubic panoramic image provides three dimensional access zooming and rotating in top, bottom, left and right directions. But we require commercial softwares to make a panoramic image and can see distorted images in top and bottom direction. This paper presents a method that constructs cubic panoramic virtual reality image using Apple QuickTimeVR's cubic data structure without any commercial software to make realistic image of top and bottom direction in cubic panoramic virtual reality space.

• The Korean Journal of Food And Nutrition
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• v.32 no.4
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• pp.371-378
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• 2019

This paper investigated the effects of the percentages of yeast and fermentation time as well as the top and bottom temperature of oven on the baking properties of rice bread. The specific volume of the dough decreased as the amount of added yeast and fermentation time increased. When 1.5% yeast was added at 60 min of fermentation time, the shape of the rice bread showed the largest volume, high appearance and a round shape. The top and bottom temperature of the oven on the baking characteristics of rice bread were affected by the baking time. When the top and bottom temperature of the oven at 200 and $140^{\circ}C$, and 200 and $170^{\circ}C$, the baking time was 20 min. When the top and bottom temperature of oven at 140 and $170^{\circ}C$, the baking time was 40 min. When the top and bottom temperature of the oven were 170 and $170^{\circ}C$, the shape of the rice bread indicated the largest volume, high appearance and a round shape. The results of this study revealed that the replacement of rice flour with 1.5% yeast, 60 min of fermentation time, and the top and bottom temperature of oven at $170-170^{\circ}C$ are effective for rice bread.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.5
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• pp.992-997
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• 2016

This paper analyzes the deviation of tunneling current for the ratio of top and bottom gate oxide thickness of short channel asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current significantly increases if channel length reduces to 5 nm. This short channel effect occurs for asymmetric DGMOSFET having different top and bottom gate oxide structure. The ratio of tunneling current in off current with parameters of channel length and thickness, doping concentration, and top/bottom gate voltages is calculated in this study, and the influence of tunneling current to occur in short channel is investigated. The analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for the ratio of top and bottom gate oxide thickness in short channel asymmetric DGMOSFET, specially according to channel length, channel thickness, doping concentration, and top/bottom gate voltages.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.704-707
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• 2013

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.