• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.372-372
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• 2007

Titanium oxide nanotube arrays were fabricated by the anodization of pure titanium thin film deposited at $500^{\circ}C$ on silicon substrates. The titania nanotubes were grown by anodization in nonaqueous-base electrolytes at different potentials between 5 V and 30 V. $TiO_2$ nanotube array with a small pore diameter of 40 nm and long titanium oxide layer of $4\;{\mu}m$ was obtained. The $TiO_2$ nanotube array was used as a porous electrode for quartz crystal microbalance (QCM). Nanoporous morphology of electrode will increase the sensitivity of microbalance.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.16-21
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• 2002

Ti-0 film is a kind of biocompatible surface materials. In this paper, a new method, glow discharge plasma oxidizing, has been used in synthesizing Ti-O gradient films on Ti6A14V substrates. The effects of ion bombardment and process parameters on the structures of titanium oxide layers have been investigated. The results demonstrate that DC glow plasma oxidizing is more efficient in preparation of dense, hard, and high adhesive Ti-O biomedical films on titanium and its alloys. Samples treated by this method show higher hardness values than by others. Especially, in the condition of hollow cathode discharge, the ion bombardment enhances ionization of oxygen, promotes the oxygen permeation and facilitates the formation of the oxide of low valence states of titanium.

• Journal of the Korean Solar Energy Society
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• v.26 no.4
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• pp.55-61
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• 2006

Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

• Corrosion Science and Technology
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• v.15 no.6
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• pp.265-270
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• 2016

The ellipso-microscopic observation of a titanium surface undergoing anodization in $0.05mol\;dm^{-3}$ of $H_2SO_4$ was conducted. During irradiation by ultra-violet (UV) light with a wavelength of 325 nm, the titanium surface allowed for the flow of a photo-induced current and showed up as a bright, patch-like image on an ellipso-microscopic view. The brightness and patch-pattern in the image changed with flowing photo-induced current. The changes in the brightness and the image corresponded to the formation and/or degradation of titanium oxide due to the photo-electrochemical reaction of the oxide. An in situ monitoring using the ellipso-microscope revealed that the film change was dependent on the irradiation light power, by UV-light increases the anodic current and results in the initiation of pitting at lower potentials as compared with the non-irradiated condition.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.846-849
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• 2013

Thin film of $TiO_2$ was obtained by the sol-gel dip method on the brosilicate glass substrate. It was found that the film was about $1.5{\mu}m$ thick as obtained by 4 successive coatings and annealed at varied temperatures ranged from $300^{\circ}C$ to $1100^{\circ}C$ for 2 hrs. The substrate used was having the surface area of $100mm^2$. Increasing the annealing temperature caused to change in mineralogical phase of titanium oxide i.e., amorphous, crystalline antase to rutile phases. The particle size of the titanium oxide film were ranged from $0.1{\sim}0.54{\mu}m$ estimated by the SEM analysis. The material showed an absorbance maximum at the wavelength 390nm obtained by UV-visible spectrophotometer. These results therefore, indicated that the $TiO_2$ film obtained relatively at low annealing temperature consisted predominantly with anatase phase; possessed higher photocatalytic behavior i.e., 2.4 times higher than that of only UV lamp irradiation.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.353-358
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• 2002

The microstructure and growth behaviors of anodic oxide layers on titanium were investigated. $TiO_2$ oxide films were prepared by anodizing at constant voltages of 180 and 200V in sulfuric acid electrolyte. The anodic $TiO_2$ layer formed at 200V showed a cell structure with more irregular pore shapes around the interface between the anodic oxide layer and the substrate titanium compared with that formed at 180V. Irregular shape of pores at the initial stage of anodization seemed to be attributed to spark discharge phenomena which heavily occurred during increasing voltages. The thickness of the anodic oxide film increased linearly at a rate of $1.9{\times}10^{ -1}\mu\textrm{m}$/min. The oxide layers formed at 180 and 200V were composed mainly of anatase structure, and the anodizing process could be suggested as one of fabrication methods of photocatalytic $TiO_2$.

• Korean Journal of Metals and Materials
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• v.46 no.6
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• pp.370-376
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• 2008

The formation of anodic oxide film of titanium (Ti) was studied at a variety of electrolyte concentrations and current density to clarify their effects on morphology, microstructure and composition of Ti oxide layer. For the analysis of the Ti oxide films, a scanning electron microscopy (SEM), X-ray diffractometer (XRD), and X-ray photoelectron spectroscopy (XPS) were used. The results showed that the concentration of phosphoric acid played a crucial role in the crystalline structure of the Ti oxide layer while the current density gave a critical effect on the thickness and diameter of its pore. In particular, the crystalline anatase phase with a thickness larger than $2{\mu}m$, which is quite desirable for a dental implant application, could be readily prepared at the phosphoric acid concentration of 0.5 M and current density higher than $2.0A/dm^2$.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.545-546
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• 2006

This study was performed to investigate the surface properties of electrochemically oxidized pure titanium by anodic spark discharging method. Commercially pure titanium plates of $10{\times}20{\times}1[mm]$ in dimensions were polished sequentially emery paper. Anodizing was performed at current density of $76.2\;[mA/cm^2]$, application voltage of 290, 350, 400 [V] using a regulated DC power supply, which allowed automatic transition constant current when a preset maximum voltage has been reached. The Ti surface oxided films was characterized by scanning electron microscope(SEM). The precipitation of HA(Hydroxyapatite) crystals on anodized surface was greatly accelerated by hydrothermal treatment. The concentrations of DL-$\alpha$-Glycerolphosphate Magnesiurn(DL-$\alpha$-GP-Mg) salt and Ca acetate in an electrolyte was highly affected the precipitation of HA crystals converted by Ti Anodized oxide films by Shape of Impulse Voltage.