• 한국재료학회지
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• 제3권6호
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• pp.638-644
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• 1993

티타니움 폴리사이드 MOS(metal oxide semiconducter)캐퍼시타 구조에서 두께가 8nm인 게이트산화막의 절연파괴강도의 열화거동을 열처리조건 및 폴리실리콘막의 두께를 달리하여 조사했다. 티타니움 폴리사이드 게이트에서 게이트산화막의 전연피괴특성은 열처리 온도가 높을수록, 열처리시간이 길수록 많이 열화되어 실리사이드의 하부막인 잔류 폴리실리콘의 두께가 얇을수록 그 정도는 심해진다. 티타니움 실리사이드가 게이트산화막고 직접적인 접촉이 없더라도 게이트산화막의 신회성이 열화되는 것을 알 수 있었다. 실리사이드 형성후 열처리에 따른 게이트 산화막의 절연파괴특성열화는 티타니움 원자가 폴리실리콘을 통해 게이트산화막으로 확산되어 게이트산화막에서 티타니움의 고용량이 증가한 때문인 것이 SIMS분석 결과로부터 확인되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.372-372
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• 2007

Titanium oxide nanotube arrays were fabricated by the anodization of pure titanium thin film deposited at $500^{\circ}C$ on silicon substrates. The titania nanotubes were grown by anodization in nonaqueous-base electrolytes at different potentials between 5 V and 30 V. $TiO_2$ nanotube array with a small pore diameter of 40 nm and long titanium oxide layer of $4\;{\mu}m$ was obtained. The $TiO_2$ nanotube array was used as a porous electrode for quartz crystal microbalance (QCM). Nanoporous morphology of electrode will increase the sensitivity of microbalance.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.16-21
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• 2002

Ti-0 film is a kind of biocompatible surface materials. In this paper, a new method, glow discharge plasma oxidizing, has been used in synthesizing Ti-O gradient films on Ti6A14V substrates. The effects of ion bombardment and process parameters on the structures of titanium oxide layers have been investigated. The results demonstrate that DC glow plasma oxidizing is more efficient in preparation of dense, hard, and high adhesive Ti-O biomedical films on titanium and its alloys. Samples treated by this method show higher hardness values than by others. Especially, in the condition of hollow cathode discharge, the ion bombardment enhances ionization of oxygen, promotes the oxygen permeation and facilitates the formation of the oxide of low valence states of titanium.

• 한국태양에너지학회 논문집
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• 제26권4호
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• pp.55-61
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• 2006

Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

• Corrosion Science and Technology
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• 제15권6호
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• pp.265-270
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• 2016

The ellipso-microscopic observation of a titanium surface undergoing anodization in $0.05mol\;dm^{-3}$ of $H_2SO_4$ was conducted. During irradiation by ultra-violet (UV) light with a wavelength of 325 nm, the titanium surface allowed for the flow of a photo-induced current and showed up as a bright, patch-like image on an ellipso-microscopic view. The brightness and patch-pattern in the image changed with flowing photo-induced current. The changes in the brightness and the image corresponded to the formation and/or degradation of titanium oxide due to the photo-electrochemical reaction of the oxide. An in situ monitoring using the ellipso-microscope revealed that the film change was dependent on the irradiation light power, by UV-light increases the anodic current and results in the initiation of pitting at lower potentials as compared with the non-irradiated condition.

• 한국산학기술학회논문지
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• 제14권2호
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• pp.846-849
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• 2013

$TiO_2$ 박막을 저온 열처리 졸-겔 법으로 합성하였다. 박막의 기판은 면적이 $100mm^2$인 붕규산염 유리를 사용하여 시료를 $300^{\circ}C$부터 $1100^{\circ}C$까지 열처리하였고, 이때 제조된 박막의 두께는 약 $1.5{\mu}m$정도였다. $300^{\circ}C$에서 2시간 동안 열처리한 $TiO_2$ 박막은 아나타제 상을 나타내었고 열처리 온도가 증가함에 따라 비정질 상태에서 아나타제상과 루타일 상이 공존하면서 각 상의 분율이 변화하였다. SEM 분석에 의하면 박막의 입자 크기는 $0.1{\sim}0.54{\mu}m$이었으며 Uv-visible 반사특성에 있어서 390nm부근에서 광흡수가 되는 것을 알 수 있었다. 따라서 낮은 열처리 온도에서 생성된 $TiO_2$ 박막은 주로 아나타제 상을 가지며 광촉매 특성을 2.4배 증가시키는 것으로 나타났다.

• 한국재료학회지
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• 제12권5호
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• pp.353-358
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• 2002

The microstructure and growth behaviors of anodic oxide layers on titanium were investigated. $TiO_2$ oxide films were prepared by anodizing at constant voltages of 180 and 200V in sulfuric acid electrolyte. The anodic $TiO_2$ layer formed at 200V showed a cell structure with more irregular pore shapes around the interface between the anodic oxide layer and the substrate titanium compared with that formed at 180V. Irregular shape of pores at the initial stage of anodization seemed to be attributed to spark discharge phenomena which heavily occurred during increasing voltages. The thickness of the anodic oxide film increased linearly at a rate of $1.9{\times}10^{ -1}\mu\textrm{m}$/min. The oxide layers formed at 180 and 200V were composed mainly of anatase structure, and the anodizing process could be suggested as one of fabrication methods of photocatalytic $TiO_2$.

• 대한금속재료학회지
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• 제46권6호
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• pp.370-376
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• 2008

The formation of anodic oxide film of titanium (Ti) was studied at a variety of electrolyte concentrations and current density to clarify their effects on morphology, microstructure and composition of Ti oxide layer. For the analysis of the Ti oxide films, a scanning electron microscopy (SEM), X-ray diffractometer (XRD), and X-ray photoelectron spectroscopy (XPS) were used. The results showed that the concentration of phosphoric acid played a crucial role in the crystalline structure of the Ti oxide layer while the current density gave a critical effect on the thickness and diameter of its pore. In particular, the crystalline anatase phase with a thickness larger than $2{\mu}m$, which is quite desirable for a dental implant application, could be readily prepared at the phosphoric acid concentration of 0.5 M and current density higher than $2.0A/dm^2$.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.545-546
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• 2006

This study was performed to investigate the surface properties of electrochemically oxidized pure titanium by anodic spark discharging method. Commercially pure titanium plates of $10{\times}20{\times}1[mm]$ in dimensions were polished sequentially emery paper. Anodizing was performed at current density of $76.2\;[mA/cm^2]$, application voltage of 290, 350, 400 [V] using a regulated DC power supply, which allowed automatic transition constant current when a preset maximum voltage has been reached. The Ti surface oxided films was characterized by scanning electron microscope(SEM). The precipitation of HA(Hydroxyapatite) crystals on anodized surface was greatly accelerated by hydrothermal treatment. The concentrations of DL-$\alpha$-Glycerolphosphate Magnesiurn(DL-$\alpha$-GP-Mg) salt and Ca acetate in an electrolyte was highly affected the precipitation of HA crystals converted by Ti Anodized oxide films by Shape of Impulse Voltage.