• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.125-127
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• 2003

Lateral MCT(MOS-controlled thyristor)소자의 전기 적 특성 Parameters의 변화에 따른 스위칭 특성을 조사하였다. 제안된 Lateral 구조의 MCT는 채널과 drift영역의 제작과정이 간편하여 ON저항이 작으면서, 대전류용인 전력소자의 제작이 가능할 것으로 사료되는데, SPICE와 MEDICI 시뮬레이션을 이용하여 drift 저항, transit time및 불순물 농도 분포에 따른 전기적 특성을 알아보았다. 불순물의 농도와 채널길이의 변수에 의한 소자의 저항을 변화시켜 U 특성과 주파수 특성을 조사하였는데, 저항이 커질수록 turn-off 시간과 ON 저항은 증가함을 나타냈다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.1012-1015
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• 1992

A gate-turn-off thyristor (GTO) that has a fuction of self-commutation is a device that can be turned on like a thyristor with a single pulse of gate current and turned-off by injecting a negative gate current pulse. GTOs have been in existence almost from the beginning of thyristor era, recently are these devices being developed with large power-handling capabilities and improved performance, and they are gaining popularity In conversion equipment. In this paper, the effects of internal parameters of GTO model using a circuit containing two transistors and three resistors the switching operation and the turn-off snubber characteristics is investigated using SPICE program.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.358-363
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• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.262-268
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• 2001

Remarkable progress has been performed in power electronics, using high frequency switching based on the improvement of power semi-conductor devices. In the other hands, it gives us serious problems, such as, insulation, increasing of the high frequency leakage current, and electric corrosion of bearing in the loaded motors driven by inverters using high frequency switching. To improve these problems, many researches have made especially on the application of soft switching technologies. From this point of view IEE-Japan had started the research groups on soft-switching technology 1997 and 1999. This paper is a survey based on the discussion in this research group with results of ARCP inverter applied for 210kVA power supply.

• 전자공학회논문지
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• 제53권5호
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• pp.69-76
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• 2016

MCT (MOS Controlled Thyristor)의 전류 구동능력은 도통상태의 MCT를 턴-오프 시킬 수 있는 능력, 즉 off-FET의 성능에 의해 결정되고, MCT의 주된 응용분야인 펄스파워 분야에서는 턴-온 시의 피크전류($I_{peak}$)와 전류상승기울기(di/dt) 특성이 매우 중요하다. 이러한 요구사항을 만족시키기 위해서는 MCT의 on/off-FET 성능 조절이 중요하지만, 깊은 접합의 P-웰과 N-웰을 형성하기 위한 삼중 확산공정과 다수의 산화막 성장공정은 이온주입 불순물의 표면농도를 변화시키고 on/off-FET의 문턱전압($V_{th}$) 조절을 어렵게 한다. 본 논문에서는 on/off-FET의 $V_{th}$를 개선하기 위한 채널영역 문턱전압 이온주입에 대하여 시뮬레이션을 진행하고 이를 토대로 제작한 MCT의 전기적 특성을 비교 평가하였다. 그 결과 문턱전압 이온주입을 진행한 MCT의 경우(활성영역=$0.465mm^2$) $100A/cm^2$ 전류밀도에서의 전압손실($V_F$)은 1.25V, 800V의 어노드 전압에서 $I_{peak}$ 및 di/dt는 290A와 $5.8kA/{\mu}s$로 문턱전압 이온주입을 진행하지 않은 경우와 유사한 특성을 나타낸 반면, $100A/cm^2$의 구동전류에 대한 턴-오프 게이트전압은 -3.5V에서 -1.6V로 감소하여 MCT의 전류 구동능력을 향상시킴을 확인하였다.

• 조명전기설비학회논문지
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• 제22권2호
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• pp.162-168
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• 2008

본 논문에서는 RCF 해석법을 싸이리스터 제어 FACTS 설비인 TCSC를 포함하는 전력계통의 미소신호안정도 해석에 적용하였다. 이산시스템에서 RCF 해석법에 기초한 고유치 감도해석 알고리즘을 제시하고 TCSC를 포함하는 전력계통에 적용하였다. 사례연구를 통해서 RCF 해석법이 TCSC의 주기적 스위칭 동작에 의해 발생하는 진동모드의 변화와 새로이 발생되는 불안정 진동모드의 정확한 해석에 매우 유용한 해석방법임을 보였다. 또한 RCF 해석법에 기초한 고유치 감도해석 방법을 사용하여 이산시스템에서 주기적 스위칭 동작에 의해 발생되는 중요 진동모드에 대한 제어기 감도계수를 정확히 구할 수 있음을 보였다. 이러한 사례연구 결과는 기존의 연속시스템에서의 상태방정식에 의한 해석결과와 크게 다른 것이며, RCF 해석법이 TCSC와 같이 주기적 스위칭 동작을 하는 설비를 포함하는 이산전력계통의 해석에 매우 유용한 방법임을 보여준다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.376-378
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• 1994

The turn-off behavior of the GTO Thyristor by its nature differs very much from that of other power f semiconductor switching devices. So canful attention should be paid in designing the GTO snubber circuit. This paper presents the effect of turn-off snubber circuit elements on the switching characteristics of the GTO, and describes considerations and criteria for the selection of the snubber component values.

• 대한전기학회논문지
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• 제36권3호
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• pp.179-187
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• 1987

Dual converter using diode bridge and 6-thyristor is discussed and the characteristics of this converter depending on their switching mode is revealed. The switching modes of converter operation are identified on both ac and dc sides. The circuit has the ability to accept or deliver DC current without change of nominal DC voltage magnitude or polarity and has the capability not only to instantaneously change from motoring to generating and vice versa, but to operate cycloconverter.

• 전기학회논문지
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• 제57권3호
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• pp.363-368
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• 2008

In this paper, the Resistive Companion Form(RCF) analysis method is applied to analyze small signal stability of power systems including thyristor controlled FACTS equipments such as SVC. The eigenvalue sensitivity analysis algorithm in discrete systems based on the RCF analysis method is presented and applied to the power system including SVC. As a result of simulation, the RCF analysis method is proved very effective to precisely calculate the variations of eigenvalues or newly generated unstable oscillation modes after periodic switching operations of SVC. Also the eigenvalue sensitivity analysis method based on the RCF analysis method enabled to precisely calculate eigenvalue sensitivity coefficients of controller parameters about the dominant oscillation mode after periodic switching operations in discrete systems. These simulation results are different from those of the conventional continuous system analysis method such as the state space equation and proved that the RCF analysis method is very effective to analyze the discrete power systems including periodically operated switching equipments such as SVC.

• Journal of Advanced Marine Engineering and Technology
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• 제18권2호
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• pp.75-82
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• 1994

The existence of peroodic impulse noises in distribution line carrier (DLC) communication system is known to be the most serious obstacle for improving DLC communication quality in reliability and capacity. From the spectral points, impulse noises can be divided into baseband type and modulation type the noise width of whichs are much different each other. With each nose type, this study presents the basic characteristics in relation to what they originate from and how their spectrum properties are revealed. The baseband type impulse noise is normally caused from thyristor circuit running with low switching speed and the modulation type noise from the circuit of switching power supply. The base wave of modulation noise is shown to be the pulsuatic charging current to primary condenser in switching power circuit. The study result indicates also that placing the DLC carrier frequency away the band predominated by modulated noise especially from RCC type switching power circuit is very important in DLC design.