• 제목/요약/키워드: through via

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TSV전극과 도금기술 (Plating Technology of Through Silicon Via)

  • 김유상;정광미
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 춘계학술대회 논문집
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    • pp.134-135
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    • 2015
  • 실리콘 반도체 칩 가공기술의 미세화는 40년에 걸쳐 전자기기 진보에 큰 공헌을 할 수 있었다. 절반간격(Half Pitch)이라는 최소 패턴크기로 좁아지고 있다. 회로패턴을 평면적으로뿐만 아니라 집적도를 올리는 3차원 실장기술이 중요시 되었다. 종래칩 표면에만 존재했던 접속용 전극을 표면과 뒷면에 붙여 칩을 관통하는 미세실리콘 관통전극(TSV; Through Silicon Via)제조기술로써 TSV는 한계의 반도체기술을 극복하여 한층 더 크게 발전할 가능성을 비추고 있다.

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The Impact of Servicescape on Customer Experience Quality through Employee-to-customer Interaction Quality and Peer-to-peer Interaction Quality in Hedonic Service Settings

  • Choi, Beomjoon;Kim, Hyun Sik
    • Asia Marketing Journal
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    • 제17권2호
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    • pp.73-96
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    • 2015
  • This paper investigates how servicescape perception influences customer experience quality in hedonic service settings. In addition to the direct effect of servicescape quality on customer experience quality, the indirect effects of servicescape quality on customer experience quality via employee-to-customer interaction quality and peer-to-peer interaction quality are also investigated. We collected data through a self-administered survey. The proposed relationships were tested using structural equation modeling. The results show that servicescape quality influences customer experience quality both directly and indirectly through employee-to-customer interaction quality and peer-to-peer interaction quality, and customer experience quality influences customer loyalty. Additionally, we find that the indirect path via peer-to-peer interaction quality is significant only in a low-satisfaction customer group. The indirect effect of servicescape quality perception through peer-to-peer interaction quality is significant only in low-satisfaction customer groups. Therefore, if evaluations for this indirect effect fall below an acceptable level, it should be addressed first before improving on other attributes. However, after this point, further improvements offer few if any gains; therefore, service firms should allocate their resources to quality improvements to other factors. This study is the first to investigate the indirect effects of servicescape quality on customer experience quality via peer-to-peer interaction quality in hedonic service settings. Additionally, this study demonstrates that the significance of this indirect effect applies only to a low-satisfaction customer group.

실리콘 관통형 Via(TSV)의 Seed Layer 증착 및 Via Filling 특성 (Characteristic of Through Silicon Via's Seed Layer Deposition and Via Filling)

  • 이현주;최만호;권세훈;이재호;김양도
    • 한국재료학회지
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    • 제23권10호
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    • pp.550-554
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    • 2013
  • As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

3D 웨이퍼 전자접합을 위한 관통 비아홀의 충전 기술 동향 (Technical Trend of TSV(Through Silicon Via) Filling for 3D Wafer Electric Packaging)

  • 고영기;고용호;방정환;이창우
    • Journal of Welding and Joining
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    • 제32권3호
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    • pp.19-26
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    • 2014
  • Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

Dome 접근법을 이용한 승모판막 수술 (Mitral Valve Surgery Via Dome of the Left Atrium)

  • 최용선;류상완;홍성범;박종춘;김상형;안병희
    • Journal of Chest Surgery
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    • 제37권8호
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    • pp.722-725
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    • 2004
  • 승모판막의 수술 시 승모판막에 접근하는 방법으로는 심방간 구(interatrial groove)를 따라 좌심방 절재를 통하거나 우심방을 절개한 후 타원오목(fossa ovalis)의 하변에서 심방중격을 절개하여 접근하는 방법이 대부분이다. 또 다른 방법으로는 상행 대동맥과 상대정맥 사이에 위치하고 있는 좌심방 Dome을 통해 승모판막으로 접근하는 방법이다. 비록 30년 전 좌심방 Dome을 통한 접근방법이 소개되었지만 널리 사용되지는 않았다. 저자들은 최근 승모판막 수술 시 좌심방 Dome을 통한 접근방법으로 효과적인 수술을 시행하였기에 문헌 고찰과 함께 소개하고자 한다.

칩 스택 패키지용 Sn 관통-실리콘-비아 형성공정 및 접속공정 (Formation of Sn Through-Silicon-Via and Its Interconnection Process for Chip Stack Packages)

  • 김민영;오택수;오태성
    • 대한금속재료학회지
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    • 제48권6호
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    • pp.557-564
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    • 2010
  • Formation of Sn through-silicon-via (TSV) and its interconnection processes were studied in order to form a three-dimensional interconnection structure of chip-stack packages. Different from the conventional formation of Cu TSVs, which require a complicated Cu electroplating process, Sn TSVs can be formed easily by Sn electroplating and reflow. Sn via-filling behavior did not depend on the shape of the Sn electroplated layer, allowing a much wider process window for the formation of Sn TSVs compared to the conventional Cu TSV process. Interlocking joints were processed by intercalation of Cu bumps into Sn vias to form interconnections between chips with Sn TSVs, and the mechanical integrity of the interlocking joints was evaluated with a die shear test.

An Empirical Performance Analysis on Hadoop via Optimizing the Network Heartbeat Period

  • Lee, Jaehwan;Choi, June;Roh, Hongchan;Shin, Ji Sun
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제12권11호
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    • pp.5252-5268
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    • 2018
  • To support a large-scale Hadoop cluster, Hadoop heartbeat messages are designed to deliver the significant messages, including task scheduling and completion messages, via piggybacking to reduce the number of messages received by the NameNode. Although Hadoop is designed and optimized for high-throughput computing via batch processing, the real-time processing of large amounts of data in Hadoop is increasingly important. This paper evaluates Hadoop's performance and costs when the heartbeat period is controlled to support latency sensitive applications. Through an empirical study based on Hadoop 2.0 (YARN) architecture, we improve Hadoop's I/O performance as well as application performance by up to 13 percent compared to the default configuration. We offer a guideline that predicts the performance, costs and limitations of the total system by controlling the heartbeat period using simple equations. We show that Hive performance can be improved by tuning Hadoop's heartbeat periods through extensive experiments.

Dispersive Broadening of Two-photon Wave Packets Generated via Type-I and Type-II Spontaneous Parametric Down-conversion

  • Hong, Kang-Hee;Baek, So-Young;Kwon, Osung;Kim, Yoon-Ho
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1650-1656
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    • 2018
  • Photons generated via spontaneous parametric down-conversion (SPDC) have broad spectrums and suffer from dispersive broadening of the temporal wave packets when they are transmitted through dispersive media. In this paper we theoretically and experimentally study the detailed amount of the temporal broadening of the two-photon wave packets generated via both type-I and type-II SPDC with ${\beta}-BaB_2O_4$ of various lengths, by transmitting them through optical fibers. We interpret the results with respect to the spectral properties of the two-photon wave packets. We believe that our results will contribute to implementing protocols involving long-range distributions of photon pairs.

Approximation of binomial Distribution via Dynamic Graphics

  • Lee, Kee-Won
    • Communications for Statistical Applications and Methods
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    • 제6권3호
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    • pp.821-830
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    • 1999
  • In This paper we calculate the probabilities of binomial and Poisson distributions when n or${\mu}$ is large. Based on this calculation we consider the normal approximation to the binomial and binomial approximation to Poisson. We implement this approximation via CGI and dynamic graphs. These implementation are made available through the internet.

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