• Journal of Magnetics
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• 제6권4호
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• 한국콘텐츠학회논문지
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• 제4권3호
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• pp.107-113
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• 2004

본 논문은 얼굴의 기하학적인 특징과 웨이브릿 변환을 사용한 PCA/LDA 복합 방법을 제안하여 얼굴 인식 시스템의 성능을 향상시켰다. 기존의 PCA/LDA 방법은 형태적인 분산의 정도에 따라 유사도를 측정하였기 때문에 얼굴 윤곽선을 정확하게 반영하지 못하였다. 이 단점을 극복하기 위하여 본 논문에서는 눈과 입사이의 거리를 측정하여 질의영상과 훈련영상에서 큰 차이가 있을 경우에는 얼굴내의 눈, 코, 턱 각각의 영역에 대한 에너지를 특징 벡터로 사용하여 기즌의 PCA/LDA로 계산한 유사도를 재산정하였다. 본 논문에서 제안한 방법을 이용해서 ORL 데이터베이스의 400개 얼굴 영상에 대해 모의 실험한 결과 기존의 PCA/LDA 방법보다 약 4％의 인식률 향상이 있음을 보였다

• 대한전자공학회논문지SD
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• 제39권8호
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• pp.12-16
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• 2002

산화인듐(ITO)박막은 대기압 저온 플라스마에 의해 식각이 가능하다는 것을 확인했다. 식각은 수소유량 4 sccm에서 가장 깊게 발생하여, 120 /min를 나타내었다. 식각속도는 Hα*의 발광강도와 대응하였다. ITO박막의 식각 메커니즘은 Hα*에 의해 환원이 된후, 남게 된 금속 화합물은 CH*과 반응하여 기판으로부터 이탈한다고 생각된다. 식각은 식각시간 50초 이상에서부터, 기판온도 145℃ 이상부터 발생하기 시작하였다. 활성화 에너지는 Arrehenius plots으로부터 0.16eV(3.75kcal/mole)를 얻었다

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• 한국세라믹학회지
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• 제52권3호
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• pp.209-214
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• 2015

Silicon nitride films were deposited at $100^{\circ}C$ by using the catalytic chemical vapor deposition technique. The source gas mixing ratio, $R_N=[NH_3]/[SiH_4]$, was varied from 10 to 30, and the hydrogen dilution ratio, $R_H=[H_2]/[SiH_4]$, was varied from 20 to 100. The breakdown field strength reached a maximum value at $R_N=20$ and $R_H=20$, whereas the resistivity decreased in the same sample. The relative permittivity had a positive correlation with the breakdown field strength. The capacitance-voltage threshold curve showed an asymmetric hysteresis loop, which became more squared as $R_H$ increased. The width of the hysteresis window showed a negative correlation with the slope of the transition region, implying that the combined effect of $R_N$ and $R_H$ overides the interface defects while creating charge storage sites in the bulk region.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• 전기학회논문지P
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• 제64권1호
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• pp.23-28
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• 2015

Measuring the distances between signals in the signal space is usually determined by obtaining the ideal metric which is not easy to obtain. In this research we have investigated the scheme that measures the distances between the signals constructed with the measured voltage signals connected to electric apparatus using Kalman filter and exponential mapping. The metric is defined on the feature signals obtained via the estimation process of a Kalman filter and the mapping process using the exponential transformation. Diagnosis is on the voltage fluctuations is applied to determining whether the system is in the stable state or not due to the unexpected accidents, such as power overcharge, discharge, outages flow may be the cause of the accident. The decision making scheme evaluated with respect to the effectiveness and the degree of complication with different variances. Two methods, the Hard Limit Threshold Scheme(HLTS) and the Interval Energy Scheme(IES) are proposed and compared. In experiments the IES shows better tolerance to impulse noise than the HLTS.

• 전기학회논문지
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• 제57권12호
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• pp.2263-2268
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• 2008

We investigated the malfunction and destruction characteristics of microcontroller devices under high power electromagnetic(HPEM) wave by magnetron. HPEM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2,450${\pm}$50 MHz and was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The variation of the line length was done with flat cables. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.

• 정보처리학회논문지B
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• 제15B권6호
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• pp.501-506
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• 2008

기존 스네이크 알고리즘은 에너지 함수의 정의에 의해 복잡한 객체의 윤곽을 추출하는데 어려움이 있고, GVF 방법은 에너지 맵 계산 시간이 많이 소요되는 문제점이 있다. 본 논문에서는 빠르고, 복잡한 객체의 윤곽을 잘 추출하는 방법을 제안한다. 객체 윤곽의 복잡도는 곡률로 정의하여 곡률 값이 임계치 이상이면 스네이크 포인트를 추가하여 객체의 윤곽을 추출하였다. 다수의 복잡한 영상에 실험을 통해 계산속도 및 윤곽 추출 성능을 개선하는 결과를 보여준다.

• Structural Engineering and Mechanics
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• 제39권1호
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• pp.147-168
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• 2011

To ensure safety and long term performance, structural control has rapidly matured over the past decade into a viable means of limiting structural responses to strong winds and earthquakes. Nonlinear response history analysis requires rigorous procedure to compute seismic demands. Therefore the simplified nonlinear analysis procedures are useful to determine performance of the structure. In this investigation, application of improved capacity demand diagram method in the control of structural system is presented for the first time. Developed pole assignment method (DPAM) in structural systems control is introduced. Genetic algorithm (GA) is employed as an optimization tool for minimizing a target function that defines values of coefficient matrices providing the placement of actuators and optimal control forces. The ground acceleration is modified under induced control forces. Due to this, performance of structure based on improved nonlinear demand diagram is selected to threshold of nonlinear behavior of structure. With small energy consumption characteristics, semi-active devices are especially attractive solutions for limiting earthquake effects. To illustrate the efficiency of DPAM, a 30-story steel moment frame structure employing the semi-active control devices is applied. In comparison to the widely used linear quadratic regulation (LQR), the DPAM controller was shown to be just as effective and better in the reduction of structural responses during large earthquakes.