• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.28-31
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• 1994

We have investigated the characterization of $V_2O_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The amorphous $V_2O_{5}$ thin films produces comparatively small changes in transmittance in the visible and near infrared compared to the crystalline $V_2O_{5}$ thin films, while the degradation occurs in a-$V_2O_{5}$ thin films with increasing the cycle life time. As the thickness of $V_2O_{5}$ thin films increases from 100 to 600 nm, the magnitude of transmittance modulation decreases. The crystalline $V_2O_{5}$ thin films with thickness around 1000 have electrochromic properties suitable for counter electrode application in lithium based electrochromic smart windows.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.250-251
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• 2005

Tin dioxide (SnO$_2$) thin films have been prepared on Si wafer (100) by Plasma Enhanced Chemical Vapor Deposition (PECVD). SnO$_2$ thin films were prepared from mixtures of dibutyltin diacetate as a precursor, oxygen as an oxidant at 275, 325, 375, 425$^{\circ}C$, respectively. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy. Structural characteristics of prepared SnO$_2$ thin films were investigated with different substrate temperature. The deposition rate was linearly increased with substrate temperature. Surface morphology and uniformity of prepared thin film was excellent at 375$^{\circ}C$ and grain size was averagely 25nm.

• Textile Coloration and Finishing
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• 제7권2호
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• pp.55-62
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• 1995

Plasma polymerization of Perfiuoropropene(PFP) and n-Hexane was carried out in a tubular type reactor by means of 13.56MHz radio frequency generator at the fixed RF discharge power of 25W and at the pressures of 100mTorr, 140mTorr and 200mTorr. The thin films were deposited on PAN fabrics in order to improve the dimemsional stability of woven states in hot water laundry. IR spectroscopy was used for the analysis of the structures of the thin films deposited and SEM for examination of surfaces of the fabrics. the PAN fabrics, which were coated by thin films at several experimental conditions, were immersed in boiling water for 2 hours and then the dimension stability of woven states were evaluated. In spite of very thin films, the results of surface modification were satisfactory. In general the performace of thin films by PFP was superior to that of n-Hexane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제20권2호
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• pp.162-166
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• 2007

The ITO thin films were prepared by facing targets sputtering (FTS) system on polycarbonate (PC) substrate. The ITO thin films were deposited with a film thickness of 100 nm at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measure. The electrical and optical characteristics of the ITO thin films were evaluted by Hall Effect Measurement (EGK) and UV/VIS spectrometer (HP), respectively. From the results, the ITO thin films was deposited with a resistivity $8{\times}10^{4}\;{\Omega}-cm$ and transmittance over 80 %.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제22권9호
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Electrical & Electronic Materials
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• 제7권4호
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• pp.325-330
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• 1994

In this paper, $TiO_2$ thin films were fabricated by Sol-Gel method and their electrical conductivity and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis condition. The uniform surface of thin films was confirmed by SEM. The electrical conductivity of thin films decreased with increasing heat treatment temperature. The humidity sensing properties of thin films were good in high humidity and low frequency regions.

• Journal of the Semiconductor & Display Technology
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• 제15권3호
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• pp.57-61
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• 2016

We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• Proceedings of the KIEE Conference
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1189-1192
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• 1993

Organic thin films were fabricated an using interelectrode capacitively coupled type plasma polymerizaion apparatus, and their optical properties were investigated. A deposition rate of styrene thin films is linearly increased, but one or vinyl-pyridine thin films is nonlinearly increased with increasing of polymerization time, pressure and monomer flow rate. The transmittance of single layer thin films is constant, but that of multi-layer appeared irregular peak with increasing of the number of layers. And then the refractive index of organic thin films is various from 1.55 to 1.65 with wavelength, the extinction coefficient indicated $10^{-3}$.