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The Structures, Optical and Electrical Properties of IGZO Thin Films by RF Magnetron Sputtering According to RF Power  

Yeon, Je ho (Department of Semiconductor Engineering, Cheongju University)
Kim, Hong Bae (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.3, 2016 , pp. 57-61 More about this Journal
Abstract
We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.
Keywords
IGZO; RF magnetron sputtering; RF power;
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Times Cited By KSCI : 10  (Citation Analysis)
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