• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.381-386
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• 2012

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which $Alq_3$ as organic buffer layer and LiF and Al as inorganic protective layers were deposited to protect the damage of OLED by epoxy. And then the OLEDs were attached to flat glass by printing method using epoxy. The basic structure of OLED doped with rubrene of 1 vol.% as emitting layer is ITO(150 nm) / 2-TNATA(50 nm) / ${\alpha}$-NPD(30 nm) / $Alq_3$:Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). In case of depositing $Alq_3$, LiF and Al and then attaching of flat glass onto OLED, current density, luminance, efficiency and driving voltage were not changed and lifetime was increased according to thickness of Al as inorganic protective layers. The lifetime of OLED/$Alq_3$/LiF/Al_4/glass structure was 139 hours increased by 15.8 times more than bare OLED of 8.8 hours and 1.6 times more than edge sealed OLED of 54.5 hours.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.905-910
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• 2011

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which LiF and Al were deposited as inorganic protective films. And then the OLED was attached to flat glass by printing method using epoxy. In case of direct coating of epoxy onto OLED by printing method, luminance and current efficiency were remarkably decreased because of the damage to the OLED by epoxy. In case of depositing LiF and Al as inorganic protective films and then coating of epoxy onto OLED, luminance and current efficiency were not changed. OLED lifetime was more increased through inorganic protective films between OLED and flat glass than that without any encapsulation (8.8 h), i.e., 47 (LiF/Al/epoxy/glass), 62 (LiF/Al/LiF/epoxy/glass), and 84 h (LiF/Al/Al/epoxy/glass). The characteristics of OLED encapsulated with inorganic protective films (attached to flat glass) showed the possibility of application of protective films.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.120-126
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• 2006

A grating-assisted fiber coupler(GAFC), which consists of a thin-film waveguide with grating and circular optical fiber, is proposed and the optimized power coupling is evaluated by using a technique amenable to rigorous longitudinal modal transmission-line theory(L-MTLT). In addition, novel criteria to couple an optical signal incident through the grating waveguide to a single-mode optical fiber are proposed. The numerical result reveals that the optimized power coupling occurs at minimum-gap condition between rigorous modes rather than for the conventional phase-matching condition.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.305-312
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• 2012

We numerically demonstrate the performance of a plasmonic lens composed of an array of nanoslits perforated on thin metallic film with slanted cuts on the output surface. Embedding Kerr nonlinear material in nanoslits is employed to modulate the output beam. A two dimensional nonlinear-dispersive finite-difference time-domain (2D N-D-FDTD) method is utilized. The performance parameters of the proposed lens such as focal length, full-width half-maximum, depth of focus and the efficiency of focusing are investigated. The structure is illuminated by a TM-polarized plane wave and a Gaussian beam. The effect of the beam waist of the Gaussian beam and the incident light intensity on the focusing effect is explored. An exact formula is proposed to derive electric field E from electric flux density D in a Kerr-Dispersive medium. Surface plasmon (SPs) modes and Fabry-Perot (F-P) resonances are used to explain the physical origin of the light focusing phenomenon. Focused ion beam milling can be implemented to fabricate the proposed lens. It can find valuable potential applications in integrated optics and for tuning purposes.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.115-120
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• 1991

The effect of ZnS buffer layer on the brightness and luminous efficiency of SrS : Ce, Cl thin film EL device is investigated. The driving voltage is 210V for the cell with ZnS buffer layer, but 220V without ZnS buffer layer. The frequency range is 500 Hz-20 kHz. The. brightness is proportional to the product of the frequency and the transferred charge density within measured range. The luminous efficiency is independent on the frequency and/or driving voltage. By using the ZnS buffer layer, the luminescence characteristics of active layer is improved. The experimental data shows 0.12 Im/W of the luminous efficiency for the device with ZnS buffer layer, but 0.061m/W without ZnS buffer layer.

• Korean Journal of Optics and Photonics
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• v.22 no.3
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• pp.117-121
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• 2011

We propose a saturable absorber reflector based on guided-mode resonance. A carbon nanotube is used as a saturable absorber. By tuning the fill factor, modulation depth can be increased without a change of height of the CNT. We investigate the reflector properties such as modulation depth, bandwidth and peak reflectance as a function of the height of the CNT and the fill factor. The advantage of the proposed reflector is that it can reduce saturation energy by 50 times compared with CNT thin film of 100~200nm.

• Current Optics and Photonics
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• v.7 no.6
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• pp.745-754
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• 2023

In order to test the recognition ability and accuracy of a target imaging simulator under the irradiation of solar stray light in a laboratory environment, it needs to be fixed on a five-axis turntable during a hardware-in-the-loop simulation test, so the optical system of the simulator should have a long exit pupil distance. This article adopts a secondary imaging method to design a projection optical system suitable for thin-film-transistor liquid crystal displays. The exit pupil distance of the entire optical system is 1,000 mm, and the final optimization results in the 400 nm-850 nm band show that the modulation transfer function (MTF) of the optical system is greater than 0.8 at the cutoff frequency of 72 lp/mm, and the distortion of each field of view of the system is less than 0.04%. Combined with the design results of the optical system, TracePro software was used to model the optical system, and the simulation of the target imaging simulator at the magnitude of -1 to +6 Mv was analyzed and verified. The magnitude error is less than 0.2 Mv, and the irradiance uniformity of the exit pupil surface is greater than 90%, which meets the requirements of the target imaging simulator.

• Korean Journal of Optics and Photonics
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• v.28 no.1
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• pp.28-32
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• 2017

In this research, we designed an LSPR sensor based on a thin-film multilayer comprising $TiO_2$ and $SiO_2$. The thickness of the overall substrate layer of the suggested multilayer LSPR sensor is limited to 100 nm, and the number of repeating $TiO_2$ and $SiO_2$ thin films is 1-4 within a limited thickness. Additionally, a nanowire structure with a gold thin film of 40 nm, height of 40 nm, period of 600 nm, and line width of 300 nm was formed on the multilayer. To design the variable wavelength-type SPR, the angle was fixed at $75^{\circ}$ and the wavelength was changed. We then simulated the system with the finite-element method (FEM) using Maxwell's equations. It was confirmed that the resonance wavelength became shorter as the number of multilayers increased when the refractive index was fixed. We found that the wavelength changes were more sensitive. However, no changes were observed when the number of the multilayers was three or higher.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.2
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• pp.55-58
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• 2013

ITO thin films deposited on glass substrate with RF magnetron sputtering were vacuum annealed at 100, 200 and $300^{\circ}C$ for 30 minutes and then effect of annealing temperature on the structural, electrical and optical properties of ITO films were investigated. The structural properties are strongly related to annealing temperature. The annealed films above $100^{\circ}C$ are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at $300^{\circ}C$. The electrical resistivity also decreases as low as $4.65{\times}10^{-4}{\Omega}cm$ with a increase in annealing temperature and ITO film annealed at $300^{\circ}C$ shows the lowest sheet resistance of $43.6{\Omega}/{\Box}$. The optical transmittance in a visible wavelength region also depends on the annealing temperature. The films annealed at $300^{\circ}C$ show higher transmittance of 80.6% than those of the films prepared in this study.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.76-85
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• 1998

Organic single crystal of p-toluene sulfonate(PTS) bulks and thin films were fabricated using a slow solution evaporation method. Third and fifth order nonlinear refractive indices, $n_2$and $n_3$, of PTS crystals at 1600 nm were determined by the Z-scan method and the multimode output of the PTS thin film waveguide was observed at 1350 nm. When the beam intensity is in 2-5 GW/$cm^2$, the nonlinear refractive indices are $n_{2}=6{\times}10^{-4}cm^{2}$/GW and $n_{3}=-7{\times}10^{-5}cm^{4}/GW^{2}$ and the two and three photon absorption coefficients are zero. When the beam intensity is in 5~16 GW/$cm^2$, the split-step fast Fourier transform beam propagation method simulation shows that the beam propagation in the PTS is distorted from the gaussian shape.