• Macromolecular Research
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• 제16권8호
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• pp.725-733
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• 2008

Polyimide (PI) multilayer thin films were prepared by spin-coating from a poly(amic acid) (PAA) and poly(amic acid) ammonium salt (PAAS). PI was prepared from pyromellitic dianhydride (PMDA) and 4,4'-oxydianiline (ODA) PAA. Different compositions of PAAS were prepared by incorporating triethylamine (TEA) into PMDA-ODA PAA in dimethylacetamide. PI multilayer thin films were spin-coated from PMDA-ODA PAA and PAAS. The PAAS comprising cationic and anionic moieties were spherical with a particle size of $20{\sim}40\;nm$. Some particles showed layers with ammonium salts, despite poor ordering. Too much salt obstructed the interaction between the polymer chains and caused phase separation. A small amount of salt did not affect the interactions of the interlayer structure but did interrupt the stacking between chains. Thermogravimetric analysis (TGA) showed that the average decomposition temperature of the thin films was $611^{\circ}C$. All the films showed almost single-step, thermal decomposition behavior. The nanostructure of the multilayer thin films was confirmed by X -ray reflectivity (XRR). The LF 43 film, which was prepared with a 4:3 molar ratio of PMDA and ODA, was comprised of uniformly spherical PAAS particles that influenced the nanostructure of the interlayer by increasing the interaction forces. This result was supported by the atomic force microscopy (AFM) data. It was concluded that the relationship between the uniformity of the PAAS particle shapes and the interaction between the layers affected the optical and thermal properties of PI layered films.

• 한국재료학회지
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• 제30권2호
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• pp.81-86
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• 2020

MoO₃ metal oxide nanostructure was formed by hydrothermal synthesis, and a perovskite solar cell with an MoO₃ hole transfer layer was fabricated and evaluated. The characteristics of the MoO₃ thin film were analyzed according to the change of hydrothermal synthesis temperature in the range of 100 ℃ to 200 ℃ and mass ratio of AMT : nitric acid of 1 : 3 ~ 15 wt%. The influence on the photoelectric conversion efficiency of the solar cell was evaluated. Nanorod-shaped MoO₃ thin films were formed in the temperature range of 150 ℃ to 200 ℃, and the chemical bonding and crystal structure of the thin films were analyzed. As the amount of nitric acid added increased, the thickness of the thin film decreased. As the thickness of the hole transfer layer decreased, the photoelectric conversion efficiency of the perovskite solar cell improved. The maximum photoelectric conversion efficiency of the perovskite solar cell having an MoO₃ thin film was 4.69 % when the conditions of hydrothermal synthesis were 150 ℃ and mass ratio of AMT : nitric acid of 1 : 12 wt%.

• 한국재료학회지
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• 제20권5호
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• pp.235-240
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• 2010

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• 통합자연과학논문집
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• 제3권3호
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• pp.138-142
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• 2010

Polystyrene thin films containing Bragg structures have been successfully obtained by the removal of DBR porous silicon films from the DBR structured porous silicon/polystyrene composite film in HF/$H_2O$ mixture solution and by replicating the nano-structures of porous silicon containing Bragg structure. Polystyrene thin films containing Bragg structures displayed unique optical reflection resonances in optical reflection spectrum. This optical reflection band was resulted from the interference of reflection wavelength at Bragg structure of polystyrene thin films. The wavelength of reflection resonances could be modified by the change of Bragg structure of the master. Polystyrene thin films containing Bragg structures were flexible and maintained their optical characteristics upon bending. The Polystyrene thin films replicate the photonic features and the nanostructure of the master.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.145.2-145.2
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• 2016

We report the phase transformation of Co thin films on a sapphire substrate induced by laser irradiation. As grown Co films were initially strained and tetragonally distorted. With low power laser irradiation, the surface was ruptured and irregular holes were formed. As the laser power was increased, the films changed into round shape Co nanocrystals with well-defined 6-fold structure. By measuring the XRD of Co nanostructure as a function of laser energy densities, we found that the change of morphological shapes from films to nanocrystals was accompanied with decrease of the tetragonal distortion as well as strain relaxation. By measuring the size distribution of nanocrystals as a function of film thickness, the average diameter is proportional to 1.7 power of the film thickness which was consistent with the prediction of thin film hydrodynamic (TFT) dwetting theory. Finally, we fabricated the formation of size controlling nanocrystals on the sapphire substrate without strain.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• 한국세라믹학회지
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• 제41권12호
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• pp.900-906
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• 2004

현재까지 개발되어 온 고체산화물 연료전지는 전해질로 사용되는 산소이온전도성 산화물의 저온에서의 낮은 전도도로 인해 그 사용영역이 제한되어 왔으며, 기판재료가 연료가스 확산층으로 사용되어야 한다는 점 때문에 저온작동을 위한 박막화 역시 명확한 한계를 가지고 있다. 이러한 문제점은 고도의 평활도를 갖는 균일한 나노기공성 기판재를 도입함으로써 해결될 수 있으며, 본 연구에서는 나노기공성 기판에 비정질 금속박막을 증착/산화하는 방안을 제시한다. 초박막형 성공정으로서, 산화 후 산소이온전도성 산화물을 구성하는 합금 타겟을 장착한 DC-magnetron sputter를 사용하여 $20{\sim}200nm$의 기공크기를 갖는 나노기공성 양극산화 알루미나 기판에 비정질 금속합금막을 형성하여 산화/열처리 과정을 거쳐 초박막 산화물 전해질의 제조공정을 실현하였다. 얻어진 박막의 가스투과특성, 입자/입계의 관찰, 상전이에 따른 결정구조/미세구조변화를 관찰하여 초박막 증착 및 전해질의 나노구조제어에 필요한 제반 기본물성데이터를 확보하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.377-377
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• 2016

Under nanosecond-pulsed laser irradiation, light-absorbing thin films have been used for photoacoustic transmitters for ultrasound generation. Especially, nanostructured absorbers are attractive due to high optical absorption and efficient thermoacoustic energy conversion: for example, 2-dimensional (2-D) gold nanostructure array, synthetic gold nanoparticles, carbon nanotubes (CNTs), and reduced graphene oxides. Among them, CNT has been used to fabricate a composite film with polydimethylsiloxane (PDMS) that exhibits excellent photoacoustic conversion performance for high-frequency, high-amplitude ultrasound generation. Previously, CNT-PDMS nanocomposite films were made by using a high-temperature chemical vapor deposition (HTCVD) process for CNT growth. However, this approach is not suitable to fabricate large-area CNT films (>several cm2). This is because a chamber dimension of HTCVD is limited and also the process often causes nonuniform CNT growth when the film area increases. As an alternative approach, a solution-based process can be used to overcome these issues. We develop PDMS composite transmitters, based on the solution process, using several nanostructured light-absorbers such as CNTs, nanoink powders, and imprinted regular arrays of gold nanostructure. We compare fabrication processes of each composite transmitters and photoacoustic output performance.