• 한국재료학회지
• /
• 제19권8호
• /
• pp.427-431
• /
• 2009

ZnO wire-like thin films were synthesized through thermal oxidation of sputtered Zn metal films in dry air. Their nanostructure was confirmed by SEM, revealing a wire-like structure with a width of less than 100 nm and a length of several microns. The gas sensors using ZnO wire-like films were found to exhibit excellent $H_2$ gas sensing properties. In particular, the observed high sensitivity and fast response to $H_2$ gas at a comparatively low temperature of $200^{\circ}C$ would lead to a reduction in the optimal operating temperature of ZnO-based $H_2$ gas sensors. These features, together with the simple synthesis process, demonstrate that ZnO wire-like films are promising for fabrication of low-cost and high-performance $H_2$ gas sensors operable at low temperatures. The relationship between the sensor sensitivity and $H_2$ gas concentration suggests that the adsorbed oxygen species at the surface is $O^-$.

• 전기학회논문지
• /
• 제56권3호
• /
• pp.583-587
• /
• 2007

Corona discharge and ozone generation characteristics of a slit dielectric barrier discharge type wire-plate plasma reactor with a third electrode have been investigated. When a third electrode is installed on a slit of the slit barrier, where an intense corona discharge occurs, it is found that a significantly increased ozone output could be obtained. This, however, indicates that the third electrode can activate the corona discharges both of the discharge wire and the slit of the slit barrier in the plasma reactor. As a result, a thin stainless wire, used as the third electrode has a strong effect to influence the corona discharge of the slit and corona wire, especially to the negative corona discharge. Higher amounts of the output ozone and ozone yield, about 1.27 and 1.29 times for the negative corona discharge, can be obtained with the third electrode, which reveals the effectiveness of the third electrode.

• 한국음향학회:학술대회논문집
• /
• 한국음향학회 1994년도 FIFTH WESTERN PACIFIC REGIONAL ACOUSTICS CONFERENCE SEOUL KOREA
• /
• pp.824-829
• /
• 1994

High-frequency and complex vibration ultrasonic wire bonding systems are propsed and their welding characteristic are studied. Ultrasonic wire bonding is used widely for joining thin connecting wire of various electronic devices including IC or LSI. Conventional bonding systems use vibration frequency of 40 or 60 kHz and linear vibration welding tips. Complex vibration welding tip which vibrates in elliptical to circular or rectangular to square in the same or different frequency is effective to join welding specimens in shorter welding time and under smaller vibration amplitude, and furthermore high-frequency systems such as 90, 120, 190 kHz are also significantly effective. High-frequency and complex vibration welding system of 90, 120 and 190 kHz are designed. Welding characteristics of these systems are found very superior than a conventional system. Welding specimens of aluminum wire of 0.1mm diameter are successfully.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
• /
• pp.561-566
• /
• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 월간포장계
• /
• 통권334호
• /
• pp.86-89
• /
• 2021

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2003년도 춘계학술발표대회 개요집
• /
• pp.228-230
• /
• 2003

Recently, lots of joining methods of thin metal sheets are being developed in order to improve joint quality and productivity in manufacturing area. Current existing welding methods are continuously challenged as new materials and smaller thickness of metal sheets are required. In this study, laser plug brazing process was investigated as a new joining method of thin metal sheets. A CO2 laser system with automatic feeding of filler metal wire and flux was developed, and laser plug brazing experiments were conducted. The brazed joints were analyzed using various methods.

• Journal of Welding and Joining
• /
• 제21권2호
• /
• pp.57-63
• /
• 2003

Since new types of vehicles or structures made from thin aluminum alloy are under rapid development and some products are already on the market, welding of aluminium sheet is increasing. MIG(Metal Inert Gas), MIG-Pulse, TIG(Tungsten Inert Gas) welding are the typical Ai welding. MIG welding has the advantage of high speed, but it is difficult to apply to the thin plate, because of bum-through by the high heat input and spatter. MIG-Pulse welding can weld without spatter and burn-through, but when the gap exists at the welding joint, there is quite a possibility of bum-through. TIG welding is difficult to weld at a high speed. AC Pulse welding alternates between DCEP(Direct Current Electrode Positive) and DCEN(Direct Current Electrode Negative). DCEN is higher wire melting rate than DCEP, while lower temperature of droplet than DCEP. In AC Pulse welding, far fixed welding current, wire melting rate increases as the EN ratio increases. For fixed wire feed rate, welding current decreases as the EN ratio increases. Because of these features, the temperature of droplet, the depth of penetration, the width of bead decrease and the reinforcement height increases as EN ratio increases, and these are able to weld at a high speed, lower heat input. It is the purpose of this study that design of AC pulse current waveform for MIG welding of Al sheet and estimation of output characteristic.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.1034-1037
• /
• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• 한국생산제조학회지
• /
• 제26권3호
• /
• pp.344-349
• /
• 2017

In this study, we developed a process technology to fabricate RFID tag antennas using a one-sheet inlay micro-pattern forming process by press-molding RFID tag antennas on insulation sheet layers, such as polymer films, using ultrasonic longitudinal vibration. In addition, a fine pattern applicable for RFID tag antennas was manufactured using a $25{\mu}m$ thick thin-plate square wire; this is in contrast to the method that uses a conventional round wire. The developed ultrasonic indentation process can be used to fabricate fine pattern of the RFID antenna using one piece of equipment. The simplified manufacturing process technology has a shorter manufacturing time and is more economical. The developed RFID tag antenna forming technique involves pressing the $25{\mu}m$ square wire directly on the thin sheet insulation sheet of maximum thickness $200{\mu}m$, using a 60 kHz ultrasonic tool horn.

• 한국전기전자재료학회논문지
• /
• 제29권10호
• /
• pp.641-646
• /
• 2016

Coil specimen was prepared by coating a copper wire with two varnish thin layers: the first was polyamideimide (PAI)/nanosilica (5 wt%) varnish and the second was anti-corona PAI/nanosilica (15 wt%) varnish. Insulation breakdown voltage was investigated under inverter surge condition at $20^{\circ}C$, $70^{\circ}C$, $100^{\circ}C$, $150^{\circ}C$, $200^{\circ}C$, $250^{\circ}C$, respectively. The insulation lifetime of the two layered coil was tens of times longer than that of original PAI coil. And the insulation lifetime decreased with increasing ambient temperature because there was weak binding strength between copper and varnish layer.