• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.248-255
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• 2020

The effects of the coating thickness on the thermal durability and thermal stability of thermal barrier coatings (TBCs) with a gradient coating thickness were investigated using a flame thermal fatigue (FTF) test and thermal shock (TS) test. The bond and topcoats were deposited on the Ni-based super-alloy (GTD-111) using an air plasma spray (APS) method with Ni-Cr based MCrAlY feedstock powder and yttria-stabilized zirconia (YSZ), respectively. After the FTF test at 1100 ℃ for 1429 cycles, the bond coat was oxidized partially and the thermally grown oxide (TGO) layer was observed at the interface between the topcoat and bond coat. On the other hand, the interface microstructure of each part in the TBC specimen showed a good condition without cracking or delamination. As a result of the TS test at 1100 ℃, the TBC with gradient coating thickness was initially delaminated at a thin part of the coating layer after 37 cycles, and the TBC was delaminated by more than 50% after 98 cycles. The TBCs of the thin part showed more oxidation of the bond coat with the delamination of topcoat than the thick part. The thick part of the TBC thickness showed good thermal stability and oxidation resistance of the bond coat due to the increased thermal barrier effect.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.393-399
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• 2016

We have successfully fabricated 3D (3-dimensional) nanostructures of $TiO_2$ coated with a $g-C_3N_4$ layer via hydrothermal and sintering methods to enhance photoelectrochemical (PEC) performance. Due to the coupling of $TiO_2$ and $g-C_3N_4$, the nanostructures exhibited good performance as the higher conduction band of $g-C_3N_4$, which can be combined with $TiO_2$. To fabricate 3D nanostructures of $g-C_3N_4/TiO_2$, $TiO_2$ was first grown as a double layer structure on FTO (Fluorine-doped tin oxide) substrate at $150^{\circ}C$ for 3 h. After this, the $g-C_3N_4$ layer was coated on the $TiO_2$ film at $520^{\circ}C$ for 4 h. As-prepared samples were varied according to loading of melamine powder, with values of loading of 0.25 g, 0.5 g, 0.75 g, and 1 g. From SEM and TEM analysis, it was possible to clearly observe the 3D sample morphologies. From the PEC measurement, 0.5 g of $g-C_3N_4/TiO_2$ film was found to exhibit the highest current density of $0.12mA/cm^2$, along with a long-term stability of 5 h. Compared to the pristine $TiO_2$, and to the 0.25 g, 0.75 g, and 1 g $g-C_3N_4/TiO_2$ films, the 0.5 g of $g-C_3N_4/TiO_2$ sample was coated with a thin $g-C_3N_4$ layer that caused separation of the electrons and the holes; this led to a decreasing recombination. This unique structure can be used in photoelectrochemical applications.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.11 no.1
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• pp.187-202
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• 1989

This study was undertaken to investigate the effect of indomethacin on prostaglandins in 4-Nitroquinoline-N-Oxide (4-NQO) induced palatal carcinoma of albino rats. 128 Sprague-Dawley strain albino rats-about 100g in body weight-were used in this study, divided into as belows; 1. Normal group (16-albino rats) with no treatment, 2. Control group (16-albino rats) treated with prophylene application onto palatal mucosa 3 times a week. 3. Experimental group I (48-albino rats) treated with 0.5% 4-NQO in prophylene application onto palatal mucosa 3 times a week. 4. Experimental group II (48-albino rats) treated with 0.5% 4-NQO in prophylene application with administered $20{\mu}g/ml$ of indomethacin in drinking water ad. lib. Four animals were sacrificed 7th, 13th, 19th, and 25th week respectively in normal and control group, and 7th, 9th, 11th, 13th, 15th, 17th, 19th, 21st, 23rd, 25th, 27th and 29th week respectively in experimental group I and II at each time. The palatal and lingual tissues were excised and kept frozen at $-70^{\circ}C$. Densitometer scan and Beta-counting counter were used for the thin layer chromatography of the arachidonic acid metabolites. The obtained results were as belows; 1. In normal and control group, there was little change of the arachidonic acid metabolites during experiment period, and the tissue homogenates included prostaglandin $D_2$, 6-keto-prostaglandin $F_{1{\alpha}}$, prostaglandin $E_2$, thromboxane $B_2$, prostaglandin $F_{2{\alpha}}$ in that order of relative abundances. 2. In experimental group I, prostaglandin $D_2$, and prostaglandin $E_2$ were increased, while 6-keto-prostaglandin $F_{1{\alpha}}$ and thromboxane $B_2$ were decreased in relative abundances of arachidonic acid metabolites. And there was little change in prostaglandin $F_{1{\alpha}}$ 3. In experimental group II, prostaglandin $D_2$, and prostaglandin $E_2$ were increased, while 6-keto-prostaglandin $F_{1{\alpha}}$ and thromboxane $B_2$ were decreased in relative abundances of arachidonic acid metabolites. And there was little change in prostaglandin $F_{2{\alpha}}$ also. 4. In the range of increase in prostaglandin $D_2$, and prostaglandin $E_2$, and that of decrease in 6-keto-prostaglandin $F_{1{\alpha}}$ and thromboxane $B_2$, in relative abundances, there was wider in experimental group I than in group II. 5. In the range of increase in prostaglandin $D_2$, and prostaglandin $E_2$, and that of decrease in 6-keto-prostaglandin $F_{1{\alpha}}$ and thromboxane $B_2$, in relative abundances, there was wider in palatal mucosa than in lingual mucosa in experimental group I and II.

• Journal of Conservation Science
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• v.28 no.4
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• pp.403-410
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• 2012

The brine treatment applied during the fabrication of forged high tin bronze objects is considered effective at the removal of surface oxide layers developed at elevated temperatures. There is not much information, however, available for the understanding of its exact effect and purpose. This work performed laboratory experiments to characterize the effect brine treatments produce on the surface of bronze objects during fabrication. Specimens were first made in the bronze shop of the Yongin folk village under varying conditions of brine treatments, and the results obtained were then used in the following laboratory experiments where the effect of brine treatments were investigated in terms of brine concentrations, alloy compositions and thermo-mechanical treatments. The results show that oxide layers generated at high temperature are easily removed by the brine treatment. It was found that the element, chlorine, played a key role in the removal of such oxide layers as opposed to the other constituent of the brine, sodium, makes no notable contribution. In bronze alloys containing 22% tin, this brine effect is obtained regardless of the application of forging as long as the brine concentration is over 0.5% based on weight. In alloys containing lead, however, no brine effect is observed due to the molten lead that emerges from inside the hot bronze specimen and forms a thin layer on its surface.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.203-209
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

• Journal of IKEEE
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• v.25 no.3
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• pp.501-505
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• 2021

In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO₂ and the mixed layers of HfO₂ and Al₂O₃, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO₂ was used as the gate dielectric, the mobility and subthreshold swing (SS) were 32.3 cm²/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO₂ and Al₂O (2:1, 1:1), the mobilities and SS were 26.4 cm²/Vs (2:1), 16.8 cm²/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the other hand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by the increase of Al₂O₃ ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channel layer decreases due to Al₂O₃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• Progress in Superconductivity
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• v.12 no.2
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.