• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.110-114
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• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

• Journal of Advanced Marine Engineering and Technology
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• v.19 no.4
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• pp.61-71
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• 1995

Nowadays the thin-walled metal bearing, which is made seperately from the bearing housing and has the ratio of wall thickness/bearing diameter being less than 1/30, are used in many newly developed large-sized slow speed diesel engines for the purpose of upgarding lubication performance and easy maintenance according to the trends of increasing output per cylinder and lowering engine speed. The type of this bearing has been used generally in many small-sized high speed engines applied for automobile, high speed craft and industrial power generation systems since 1950s. But the tranditional thick-walled bearings, whice are linned white metal on the bearing housing directly, have been installed on the large and slow speed engines until 1990s due to the easy manufacturing procedures. In this study we have calculated optimum dimensions of the metal bearing, fabricated special zigs for crush measurement, model test machine, 2 sets of specimens.(crosshead pin bearing, $\phi$818*552*20mm) for B & W 6S70MC(20, 940*88rpm), and evaluated metal constact phenomena of white metal, its friction coefficient, temparature rise through the model test and field performance test.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.349-355
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• 2009

Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.826-829
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• 2003

Metal/chalcogenide glass semiconductor(CGS) thin film devices were produced in the vacuum evaporator by the methode of vacuum thermal evaporation. We investigated the influence of the correlations of thickness of metal and CGS upon the concentration of Metal in a CGS thin film. It has shown that M/CGS thin film devices were very sensitive to temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.405-409
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• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure consists of a chrom thin-film, patterned on a Wheat stone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097∼1.21mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43%FS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.163-168
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• 2010

We here describe the laser-direct patterning of nanostructured metal thin films. This method involves light-matter interaction in which a pulsed laser beam impinging on the film generates a thermoelastic force that plays a role to detach the film from the substrate or underlying layers. A moderate cohesion of the nanostructured film enables localized desorption of the material upon irradiation by a spatiallymodulated laser beam, giving good fidelity with the transfered pattern. This photoresist-free process provides a simple high-resolution scheme for patterning metal thin films.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.70-73
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• 2015

Many studies have used chemical vapor deposition (CVD) to grow graphene. However, CVD is inefficient in terms of production costs, and inefficient for mass production because a transfer process using a catalytic metal is needed. In this study, graphene thin films were grown on single crystal sapphire substrates without a catalytic metal, using pulsed laser deposition (PLD) to resolve these problems. In addition, the growth of graphene using PLD was confirmed to have a close relationship with the substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.154-159
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• 2015

In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.