• Korea-Australia Rheology Journal
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• v.19 no.3
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• pp.165-169
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• 2007

The light guide plate (LGP) of LCD-BLU (Liquid Crystal Display-Back Light Unit) is usually manufactured by forming numerous dots by etching process. However, the surface of those etched dots of LGP is very rough due to the characteristics of etching process, so that its light loss is relatively high due to the dispersion of light. Accordingly, there is a limit in raising the luminance of LCD-BLU. In order to overcome the limit of current etched-dot patterned LGP, micro-lens pattern was tested to investigate the possibility of replacing etched pattern in the present study. The micro-lens pattern fabricated by the modified LiGA with thermal reflow process was applied to the optical design of LGP. The attention was paid to the effects of different optical pattern type (i.e. etched dot, micro-lens). Finally, the micro-lens patterned LGP showed better optical qualities than the one made by the etched-dot patterned LGP in luminance.

• Korea-Australia Rheology Journal
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• v.19 no.3
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• pp.171-176
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• 2007

LCD-BLU (Liquid Crystal Display-Back Light Unit) of medium size is usually manufactured by forming numerous dots with $50{\sim}300\;{\mu}m$ in diameter by etching process and V-grove shape with $50\;{\mu}m$ in height by mechanical cutting process. However, the surface of the etched dots is very rough due to the characteristics of the etching process and V-cutting needs rather high cost. Instead of existing optical pattern made by etching and mechanical cutting, 3-dimensional continuous micro-lens of $200\;{\mu}m$ in diameter was applied in the present study. The continuous micro-lens pattern fabricated by modified LIGA with thermal reflow process was tested to this new optical design of LGP. The manufacturing process using LIGA-reflow is made up of three stages as follows: (i) the stage of lithography, (ii) the stage of thermal reflow process and (iii) the stage of electroplating. The continuous micro-lens patterned LGP was fabricated with injection molding and its test results showed the possibility of commercial use in the future.

• Journal of Information Display
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• v.12 no.1
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• pp.5-10
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• 2011

A novel architecture and proprietary electronic inks were developed to provide disruptive digital-media solutions based on an electrokinetic technology platform. The flexible reflective electronic media (eMedia) was fabricated by imprinting three-dimensional microscale structures with a roll-to-roll manufacturing platform. The HP technologies enable the required attributes for eMedia, such as low power, transparency, print-quality color, continuous levels of gray, and lowcost scalability. Pixelation was also demonstrated by integrating with the prototype oxide thin-film transistor backplane, and the system architecture was further developed by stacking primary-colorant layers for color reflective-display application. The innovations described in this paper are currently being developed further for the eSkins, eSignage, and ePaper applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.502-503
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• 2005

본 연구에서는 TFT-LCD(Thin Film Transistor-Liquid Crystal Display)의 배경광원인 BLU(Back Light Unit)의 고효율화, 고품질화를 통한 원가 절감을 달성하기 위해 BLU의 대표적 핵심부품중에 하나인 프리즘 시트를 사용하지 않는 구조의 MNT용 BLU를 개발하는데 목적을 두었다. 고효율의 BLU를 만들기위하여 17인치 BLU의 도광판의 상, 하면에 Prism 형상을 구현하였으며, 광학적 시뮬레이션을 통하여 먼저 가능성을 검토하였고, UV에 반응하는 Resin을 경화시키는 방법을 이용하여 일반 도광판에 프리즘형상을 각인(Imprint)시키는 방법으로 실물을 재현하였다. 실험 결과 프리즘 시트를 사용하지 않는 구조의 MNT용 17인치 BLU에서 중심휘도 4,984nit, 균일도 70% 달성하였다.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.239-243
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• 2014

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.6-14
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• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.98-106
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• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.111-121
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• 2012

In this paper, a poly-Si thin film transistor with ${\sim}0.5{\mu}m$ gate length was fabricated and its electrical characteristics are optimized. From the results, it was verified that making active region with larger grain size using low temperature annealing is an efficient way to enhance the subthreshold swing, drain-induced barrier lowering and on-current characteristics. A SONOS flash memory was fabricated using this poly-Si channel process and its performances are analyzed. It was necessary to optimize O/N/O thickness for the reduction of electron back tunneling and the enhancement of its memory operation. The optimized device showed 2.24 V of threshold voltage memory windows which coincided with a well operating flash memory.