• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.665-670
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• 2016

Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over $1,000^{\circ}C$. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about $1{\sim}5{\mu}m$, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.148-151
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• 2004

Mechanical properties such as Young's modulus and hardness of thin film in coated steel are difficult to determine by nano-indentation from the conventional analysis using the load-displacement curve. Therefore, an analysis of the nano-indentation loading curve was used to determine the Young's modulus, hardness and strain hardening exponent. A new method is recently being developed for plasticity properties of materials from nano-indentation. Elastic modulus of the thin films shows relatively small influence whereas yield strength and strain hardening are found to have significant effect on measured data. The load-displacement behavior of material tested with a Berkovich indenter and nano-indentation continuous stiffness method is used to measure the modulus and hardness through thin films.

• Transactions of Materials Processing
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• v.13 no.8
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• pp.731-737
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• 2004

Mechanical properties such as Young's modulus and hardness of thin film in coated steel are difficult to determine by nano-indentation from the conventional analysis using the load-displacement curve. Therefore, an analysis of the nano-indentation loading-unloading curve was used to determine the Young's modulus, hardness. A new method is recently being developed for elastic-plastic properties of materials from nano-indentation. Elastic modulus of the thin films shows relatively small influence whereas yield strength is found to have significant effect on measured data. The load-displacement curves of material tested with a Berkovich indenter and nano-indentation continuous stiffness method is used to measure the modulus and hardness through thin films, and then these are computed using the analysis procedure. The developed neural networks apply also to obtain reliable mechanical properties.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.4
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• pp.164-168
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• 2017

Intense electron beam was irradiated on the CrAlN thin films deposited in SKD61 under different incident energies and then the effect of electron beam irradiation on the enhancement of surface hardness and wear resistance was investigated. Surface hardness and wear resistance of the CrAlN films is increased proportionally with the electron beam energy. While the surface hardness of as deposited CrAlN film is Hv ($0.1g{\cdot}f$) 450, the hardness oflectron irradiated (600 eV) film is Hv ($0.1g{\cdot}f$) 2050. The width of wear track of the untreated SKD61 is $X\_{\mu}m$, while the track-width of the electron irradiated CrAlN (600 eV) film is $787{\mu}m$, respectively. From the observed results, it is supposed that the optimal electron beam irradiation can be one of the useful surface treatment technologies for the enhancement of surface hardness and wear resistance of CrAlN/SKD61, simultaneously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.89-90
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• 2007

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10% carrier gas $(H_2)$ concentrations using Nano Indentation. When carrier gas $(H_2)$ concentration was 10%, it has been proved that the mechanical properties, elastic modulus and hardness, of 3C-SiC are the best of them. In the case of 10% carrier gas concentration, Young's modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to $H_2$ concentrations was investigated by AFM (atomic force microscope), when $H_2$ concentration was 10%, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin film to MEMS applications, $H_2$ concentration's rate should increase to obtain better mechanical properties and surface roughness.

• Advances in materials Research
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• v.9 no.1
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• pp.49-62
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• 2020

Fracture toughness of SiC on Si thin films of thicknesses of 150, 750, and 1500 nm were measured using Agilent XP nanoindenter equipped with a Dynamic Control Module (DCM) in Load Control (LC) and Continuous Stiffness Method (CSM) protocols. The fracture toughness of the Si substrate is also measured. Nanovision images implied that indentations into the films and well deep into the Si caused cracks to initiate at the Si substrate and propagate upward to the films. The composite fracture toughness of the SiC/Si was measured and the fracture toughness of the SiC films was determined based on models that estimate film properties from substrate properties. The composite hardness and modulus of the SiC films were measured as well. For the DCM, the hardness decreases from an average of 35 GPa to an average of 13 GPa as the film thick increases from 150 nm to 1500 nm. The hardness and moduli of the films depict the hardness and modulus of Si at deep indents of 12 and 200 GPa respectively, which correlate well with literature hardness and modulus values of Si. The fracture toughness values of the films were reported as 3.2 MPa√m.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.514-519
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• 2017

TiN (titanium nitride) films were prepared using the RF magnetron sputtering technique. The films were deposited by pure $N_2$ plasma sputtering. Their mechanical properties, such as nano-indentation hardness, friction coefficient, and surface wettability, have been investigated. X-ray diffraction (XRD) studies revealed that the orientation of $TiN_X$ films changed towards the (111) orientation with decreasing working pressure due to a strong compressive stress during deposition. The strongest TiN (111) orientation was found when the film was deposited at a working pressure of 1 Pa. This film showed the largest hardness (16 GPa) and smallest friction coefficient (0.17) among the studied samples. Moreover, this film was found to be accompanied by a water-repellent surface with water contact angle more than $100^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.194-194
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• 2009

3C-SiC thin films are widely used in extreme environments, radio frequency (RF) environments, and bio-materials for micro/nano electronic mechanical systems (M/NEMS). The mechanical properties of 3C-SiC thin films need to be considered when designing M/NEMS, so Young's Modulus and the hardness need to be accurately measured. Young's Modulus and the hardness are influenced by N-doping. In this paper, we show that the mechanical properties of poly (polycrystalline) 3C-SiC thin films are influenced by the N-doping concentration. Furthermore, we measure the mechanical properties of 3C-SiC thin films for N-doping concentrations of 1%, 3%, and 5%, by using nanoindentation. For films deposited using a 1% N-doping concentration, Young's Modulus and the hardness were measured as 270 GPa and 30 GPa, respectively. When the surface roughness of the thin films was investigated by using atomic force microscopy (AFM), the roughness of the 5% N-doped 3C-SiC thin film was the lowest of all the films, at 15 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.