• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.71-74
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• 2012

Uniformity of the wafer temperature is one of the important factors in etching process. Plasma, chucking force, backside helium pressure and the surface temperature of ESC(electrostatic chuck) affect the wafer temperature. ESC consists of several layers of structure. Each layer has own thermal resistance and the Si-adhesive layer has highest thermal resistance among them. In this work, the temperature distribution of ESC was analyzed by 3-D FEM with various defects and the thickness deviation of the Si-adhesive layer. The result with Si-adhesive layer with the low center thickness deviation shows modified temperature distribution of ESC surface.

• Proceedings of the Korea Concrete Institute Conference
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• 2002.05a
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• pp.767-772
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• 2002

Using the diffusion cell, a experimental study on the nitrogen permeability was performed with the various thickness of concrete. This is important with relating to the carbonation study because the study of $CO_2$ diffusivity needs to use thin concrete specimen. Experimental results show that the nitrogen permeability is few affected by concrete specimen's thickness. But, specimens with 1cm thickness have a high permeability and deviation relatively. Also, specimens with w/c ratio 0.40 have a low permeability than 0.58. Consequently, the 3cm thickness is the better stable than others but the 1cm thickness specimens will be stable in case having a lot of specimens.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.6
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• pp.104-110
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• 2014

This paper presents a non-contact inspection system for automatically measuring the thickness of an aircraft wing rip product. In order to conduct the inspection of the wing rib thickness automatically, a non-contact laser displacement sensor, end-effector, and a robot were selected for use. The non-contact type inspection system was evaluated by measuring the measurement deviation of the rotation direction of a C-type yoke end-effector and the transfer direction of a V-slim end-effector. In addition, the non-contact inspection system for wing rib thickness measurements was validated through thickness measurements of a web, flange, and stiffener.

• Corrosion Science and Technology
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• v.23 no.3
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• pp.228-234
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• 2024

Zinc wiping is a phenomenon used to control zinc-coating thickness on steel substrate during hot dip galvanizing by equipment called air knife. Uniformity of zinc coating weight in length and width profile along with surface quality are most critical quality parameters of galvanized steel. Deviation from tolerance level of coating thickness causes issues like overcoating (excess consumption of costly zinc) or undercoating leading to rejections due to non-compliance of customer requirement. Main contributor of deviation from target coating weight is dynamic change in air knives equipment setup when thickness, width, and type of substrate changes. Additionally, cold coating measurement gauge measure coating weight after solidification but are installed down the line from air knife resulting in delayed feedback. This study presents a coating weight control model (Galvantage) predicting critical air knife parameters air pressure, knife distance from strip and line speed for coating control. A reverse engineering approach is adopted to design a predictive, prescriptive, and descriptive model recommending air knife setups that estimate air knife distance and expected coating weight in real time. Implementation of this model eliminates feedback lag experienced due to location of coating gauge and achieving setup without trial-error by operator.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.11
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• pp.2709-2714
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• 2014

This paper has analyzed the change of threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factor to be able to control the current in the subthreshold region increases. The analytical potential distribution is derived from Poisson's equation to analyze the threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness. The Gaussian distribution function is used as charge distribution. This analytical potential distribution is used to derive off-current and subthreshold swing. By observing the results of threshold voltage and conduction path with parameters of bottom gate voltage, channel length and thickness, projected range and standard projected deviation, the threshold voltage greatly changed for the ratio of top and bottom gate oxide thickness. The threshold voltage changed for the ratio of channel length and thickness, not the absolute values of those, and it increased when conduction path moved toward top gate. The threshold voltage and conduction path changed more greatly for projected range than standard projected deviation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.762-765
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• 2013

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and gate oxide thickness for DGMOSFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.255-263
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• 2022

The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (V_fbf) and bottom gate (V_fbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson's equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as V_fbb-V_fbf increases when the projected range is near the top gate, and the SS decreases as V_fbb-V_fbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.

• Journal of Institute of Control, Robotics and Systems
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• v.2 no.3
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• pp.134-141
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• 1996

In this paper, we formulate the mathematical model for a single-stand rolling mill and design control systems for the thickness control at the exit of roll stand and for the tension control of the strip in the process. We propose a thickness controller based on the Internal Model Control structure which can be an effective application when the frequency components of the thickness deviation of the entry strip are known and, show how it can be appropriately combined with BISRA AGC method for a precise thickness control while maintaining the robustness against the modeling error of the mill modulus. It is illustrated by simulations that the proposed thickness control method gives better performance than existing methods and has the robustness against the modeling error of the mill modulus as well.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2217-2222
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e. projected range and standard projected deviation, The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model for the change of oxide thickness. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60 mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the relationship of subthreshold swing and oxide thickness have been analyzed according to the shape of doping distribution.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.1-2
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• 2000

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.