• 한국분말재료학회지
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• 제25권5호
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• pp.384-389
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• 2018

Nanoparticles of PbTe are prepared via chemical reaction of the equimolar aqueous solutions of $Pb(CH_3COO)_2$ and Te at $120^{\circ}C$. The size of the obtained particles is 100 nm after calcination in a hydrogen atmosphere. Dense specimens for the thermoelectric characterization are produced by spark plasma sintering of prepared powders at $400^{\circ}C$ to $500^{\circ}C$ under 80 MPa for 5 min. The relative densities of the prepared specimens reach approximately 97% and are identified as cubic based on X-ray diffraction analyses. The thermoelectric properties are evaluated between $100^{\circ}C$ and $300^{\circ}C$ via electrical conductivity, Seebeck coefficient, and thermal conductivity. Compared with PbTe ingot, the reduction of the thermal conductivities by more than 30% is verified via phonon scattering at the grain boundaries, which thus contributes to the increase in the figure of merit.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.665-666
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• 2006

Undoped $CoSb_3$ powders were synthesized by mechanical alloying (MA) of elemental powders using a nominal stoichiometric composition. Nano-structured, single-phase skutterudite $CoSb_3$ was successfully produced by vacuum hot pressing (VHP) using MA powders without subsequent annealing. Phase transformations during synthesis were investigated using XRD, and microstructure was observed using SEM and TEM. Thermoelectric properties in terms of Seebeck coefficient, electrical conductivity, thermal conductivity and figure of merit(ZT) were systematically measured and compared with the results of analogous studies. Lattice thermal conductivity was reduced owing to increasing phone scattering in nano-structured MA $CoSb_3$, leading to enhancement in the thermoelectric figure of merit. MA associated with VHP technique offers an alternative potential processing route for the process of skutterudite.

• 한국재료학회지
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• 제31권8호
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• pp.445-449
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• 2021

Zintl compound Mg₃Sb₂ is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg_3.8Sb_2-xTe_x (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg_3.8Sb_1.99Te_0.01, indicating an improved ZT value over the intrinsic value.

• Journal of Ceramic Processing Research
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• 제20권6호
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• pp.582-588
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• 2019

FeVSb1-xTex (0.02 ≤ x ≤ 0.10) half-Heusler alloys were fabricated by mechanical alloying process and subsequent vacuum hot pressing. Near single half-Heusler phases are formed in vacuum hot pressed samples but a second phase of FeSb2 couldn't be avoided. After doping, the lattice thermal conductivity in the system was shown to decrease with increasing Te concentration and with increasing temperature. The lowest thermal conductivity was achieved for FeVSb0.94Te0.06 sample at about 657 K. This considerable reduction of thermal conductivities is attributed to the increased phonon scattering enhanced by defect structure, which is formed by doping of Te at Sb site. The phonon scattering might also increase at grain boundaries due to the formation of fine grain structure. The Seebeck coefficient increased considerably as well, consequently optimizing the thermoelectric figure of merit to a peak value of ~0.24 for FeVSb0.94Te0.06. Thermoelectric properties of various Te concentrations were investigated in the temperature range of around 300~973 K.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1455-1458
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• 2007

In this research, a polycrystalline silicon (poly-Si) film layer for micro thermoelectric generator (TEG) was fabricated. The fabrication process of the thermoelectric poly-Si film layer is explained. The P-type and N-type poly-Si films were fabricated on a tetra ethoxy silane (TEOS) layer with a supporting Si wafer. Seebeck coefficient and electrical conductivity were measured, including the transport properties such as the hall coefficient, hall mobility and carrier concentration. The design parameters for a rapid thermal process (RTP) were decided based on the experimental results. The measured power factors of the P-type and N-type were $21.2\;{\mu}Wm^{-1}K^{-2}$ and $26.7\;{\mu}Wm^{-1}K^{-2}$, respectively.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.459-460
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• 2006

N-type $Bi_2Te_3-Sb_2Te_3$ solid solutions doped with 1$CdCl_2$ was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from $400^{\circ}C$ to $500^{\circ}C$, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of $3.88Kgf/mm^2$. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at $500^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제15권1호
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• pp.1-6
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• 2008

칼슘 코발트 층상 산화물계에서 $Ca_3Co_2O_6$와 $Ca_3Co_4O_9$를 기본으로 하여 열전 특성 향상을 위해 Ca 위치를 Bi, Sr, La, K로 부분 치환하고, Co위치를 Mn, Fe, Ni, Cu, Zn로 치환한 다결정 산화물을 제조하여 $300{\sim}1000K$ 까지의 열전 특성을 분석하였다. Bi가 치환된 $Ca_3Co_4O_9$계의 $Ca_{2.7}Bi_{0.3}Co_4O_9$는 전기전도도 $85.4({\Omega}cm)^{-1}, Seebeck계수 $176.2{\mu}V/K$그리고 파워팩터 $265.2{\mu}W/K^m$로 가장 높은 열전 물성치가 관찰되었다. 열전 모듈 제조를 위해서 각각의 열전반도체의 성능지수Z($10^{-4}/K$)가 0.87, 0.41의 값인 p형 열전 소재로 $Ca_{2.7}Bi_{0.3}Co_4O_9$를, n형 열전 소재로($Zn_{0.98}Al_{0.02}$)O를 선택하여 열전쌍을 제조하였다. 제조된 2쌍의 기본 열전쌍은 120K의 온도차에서 약 30mV정도의 기전력이 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.143-144
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• 2006

Thermoelectric properties of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ clathrates were investigated in the temperature range between 323K and 923K. Both clathrates were fabricated by the arc-melting method. Homogeneous single phases were observed in the annealed clathrates. Electrical resistivities for both clathrates were increased as the temperature increased up to 823K. The sign of the Seebeck coefficients for both clathrates was negative, which means that the major carriers were electrons. The maximum values of ZT for $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were 0.86 at 773K and 0.76 at 923K, respectively.

• 한국분말재료학회지
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• 제24권2호
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• pp.108-114
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• 2017

We fabricate fine (<$20{\mu}m$) powders of $Bi_{0.5}Sb_{1.5}Te_3$ alloys using a large-scale production method and subsequently consolidate them at temperatures of 573, 623, and 673 K using a spark plasma sintering process. The microstructure, mechanical properties, and thermoelectric properties are investigated for each sintering temperature. The microstructural features of both the powders and bulks are characterized by scanning electron microscopy, and the crystal structures are analyzed by X-ray diffraction analysis. The grain size increases with increasing sintering temperature from 573 to 673 K. In addition, the mechanical properties increase significantly with decreasing sintering temperature owing to an increase in grain boundaries. The results indicate that the electrical conductivity and Seebeck coefficient ($217{\mu}V/K$) of the sample sintered at 673 K increase simultaneously owing to decreased carrier concentration and increased mobility. As a result, a high ZT value of 0.92 at 300 K is achieved. According to the results, a sintering temperature of 673 K is preferable for consolidation of fine (<$20{\mu}m$) powders.

• 대한금속재료학회지
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• 제50권11호
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• pp.839-845
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• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.