• 한국전기전자재료학회논문지
• /
• 제13권5호
• /
• pp.365-370
• /
• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• 전기의세계
• /
• 제25권2호
• /
• pp.87-91
• /
• 1976

Experimentally to investigate the conductive characteristic of oil-immersed paper, we observed the leakage current-voltage characteristic of oil-immersed paper, the temperature dependence of ionization rate and the effect of metal electrode on the leakage current. The results showed that the leakage current-voltage characteristic generally followed the experimental equation i=i$_{0}$ exp (K.root.E) and the slope K did not change by the temperature and electric strength, but only when the direct voltage was applied. And also the leakage current seemed to depend on the work function of metal electrode. From the above results we concluded that the deterioration of oil-immersed paper was not only caused by the thermionic emission from the cathode but also by the conductive property of oil-immersed paper in itself and the work function of metal electrode.e.

• 한국정보통신학회논문지
• /
• 제11권5호
• /
• pp.955-960
• /
• 2007

본 연구에서는 단채널효과를 감소시키기 위하여 개발되고 있는 이중게이트 MOSFET의 게이트인가 전압에 따른 터널링전류의 변화를 관찰하고자한다. 소자가 나노단위까지 스케일링되면서 터널링전류는 매우 중요한 전류요소가 되었으며 특히 차단전류를 구성하고 있는 열방사전류와 비교하면 소자의 크기가 미세해질수록 급격히 증가하는 특성을 보이고 있다. 이를 감소시키기 위한 연구가 활발히 진행되고 있으며 본 연구에서는 이에 부응하기 위하여 게이트 인가전압에 따른 터널링전류의 변화를 고찰할 것이다. 게이트전압에 대한 터널링전류 변화를 관찰하기 위하여 전위분포함수를 유도하였으며 전위분포함수와 터널링확률의 관계로부터 차단전류변화를 유도하였다. 이와같이 유도한 전류는 열방사전류와 비교되었으며 터널링전류 감소를 위한 유효게이트전압에 대한 관계를 유도하였다.

• 한국재료학회지
• /
• 제26권8호
• /
• pp.412-416
• /
• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

• Journal of information and communication convergence engineering
• /
• 제5권1호
• /
• pp.45-49
• /
• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.270-274
• /
• 1997

The numerical model that can describe the ignition of the pseudospark discharge using hybrid fluid-particle method has been developed. The evolution process of the discharge has been divided into four phases along the potential distribution. After the plasma enters in the hollow cathode, the confining effect which is one of hollow cathode properties occurs and the electron current on anode rises rapidly. As the plasma expands successively, the sheath contracts and as the electric field in the sheath increases, the field-enhanced thermionic emission(Schottky emission) occurs. From numerical results, the physical mechanism that causes the rapid current rise in the ignition of the pseudospark discharge could be identified.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2006년도 춘계종합학술대회
• /
• pp.861-864
• /
• 2006

본 연구에서는 분석학적 모델을 이용하여 나노구조 이중게이트 MOSFET의 전도현상을 고찰하고자 한다. 분석학적모델을 유도하기 위하여 포아슨방정식을 이용하였다. 전류전도에 영향을 미치는 전도메카니즘은 열방사전류와 터널링전류를 사용하였으며 본 연구의 모델이 타당하다는 것을 입증하기 위하여 서브문턱스윙값에 대하여 이차원 시뮬레이션값과 비교하였다. 이중게이트 MOSFET의 구조적 파라미터인 게이트길이, 게이트 산화막 두께, 채널두께에 따라 전도중심의 변화와 전도중심이 서브문턱 스윙에 미치는 영향을 고찰하였다. 또한 채널도핑농도에 따른 전도중심의 변화를 고찰함으로써 이중 게이트 MOSFET의 타당한 채널도핑농도를 결정하였다.

• 한국정보통신학회논문지
• /
• 제12권3호
• /
• pp.541-546
• /
• 2008

본 연구에서는 분석학적 모델을 이용하여 나노구조 이중게이트 MOSFET의 전도현상을 고찰하고자 한다. 분석학적 모델을 유도하기 위하여 포아슨방정식을 이용하였다. 전류전도에 영향을 미치는 전도메카니즘은 열방사전류와 터널링전류를 사용하였으며 본 연구의 모델이 타당하다는 것을 입증하기 위하여 서브문턱스윙값에 대하여 이차원 시뮬레이션 값과 비교하였다. 이중게이트 MOSFET의 구조적 파라미터인 게이트길이, 게이트 산화막 두께, 채널두께에 따라 전도중심의 변화와 전도중심이 서브문턱스윙에 미치는 영향을 고찰하였다. 또한 채널 도핑농도에 따른 전도중심의 변화를 고찰함으로써 이중게이트 MOSFET의 타당한 채널도핑농도를 결정하였다.

• 한국재료학회지
• /
• 제29권4호
• /
• pp.241-251
• /
• 2019

There are several manufacturing techniques for developing thermionic cathodes for vacuum ultraviolet(VUV) ionizers. The triple alkaline earth metal emitters(Ca-Sr-Ba) are formulated as efficient and reliable thermo-electron sources with a great many different compositions for the ionizing devices. We prepare two basic suspensions with different compositions: calcium, strontium and barium. After evaluating the electron-emitting performance for europium, gadolinium, and yttrium-based cathodes mixed with these suspensions, we selected the yttrium for its better performance. Next, another transition metal indium and a lanthanide metal neodymium salt is introduced to two base emitters. These final composite metal emitters are coated on the tungsten filament and then activated to the oxide cathodes by an intentionally programmed calcination process under an ultra-high vacuum(${\sim}10^{-6}torr$). The performance of electron emission of the cathodes is characterized by their anode currents with respect to the addition of each element, In and Nd, and their concentration of cathodes. Compared to both the base cathodes, the electron emission performance of the cathodes containing indium and neodymium decreases. The anode current of the Nd cathode is more markedly degraded than that with In.

• Nuclear Engineering and Technology
• /
• 제53권12호
• /
• pp.3910-3917
• /
• 2021

Reactor fuel's power distribution plays a vital role in designing the new generation thermionic Space Reactor Power Systems (SRPS). In this paper, the 1/12th SPACE-R's full reactor core was numerically analyzed with two kinds of different axial power distribution, to identify their impacts on thermal-hydraulic and thermoelectric characteristics. In the benchmark study, the maximum error between numerical results and existing data or design values ranged from 0.2 to 2.2%. Four main conclusions were obtained in the numerical analysis: a) The axial power distribution has less impact on coolant temperature. b) Axial power distribution influenced the emitter temperature distribution a lot, when the core power was cosine distributed, the maximum temperature of the emitter was 194 K higher than that of the uniform power distribution. c) Comparing to the cosine axial power distribution, the uniform axial power distribution would make the maximum temperature in each component of the reactor core much lower, reducing the requirements for core fuel material. d) Voltage and current distribution were similar to the axial electrode temperature distribution, and the axial power distribution has little effect on the output power.