• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.354-357
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• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.12
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• pp.1155-1159
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• 2014

Thermal barrier coating (TBC) which is used to protect the substrate of gas turbine is exposed to high temperature environment. Because of high temperature environment, thermally grown oxide (TGO) is grown at the interface of thermal barrier coating in operation of gas turbine. The growth of TGO critically affects to durability of TBC, so the evaluation about durability of TBC with TGOs of various thickness is needed. In this research, TGO was inserted by aging of TBC specimen to evaluate the effect of the TGO growth. Then thickness of TGO was defined by microstructure analysis, and thermal fatigue test was performed with these aging specimens. Finally, the relation between thermal fatigue life and the TGO growth according to aging time was obtained.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.191-192
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.165-166
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• 1994

The depth profiles of the as-grown and the annealed NH$_3$ oxide film in NH$_3$(7.5%)/$N_2$ ambient at 45$0^{\circ}C$ are analized . This annealing in the ambient of mixed gases removes the small quantities of N component from the NH$_3$ oxide film. In AES analysis, the NH$_3$ oxidation shows the exact stoichiometry of SiO$_2$ and a sharp slop at SiO$_2$/Si interface.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.375-381
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• 2005

High temperature oxidation behavior of thermal barrier coating (TBC) system (IN738 substrate + NiCoCrAlY or NiAl bond coat with or without Pt + yttria stabilized zirconia) prepared by air plasma spray (APS) process has been studied in order to understand the effect of Pt addition to bond coat on the stability of TBC system. Specimens were oxidized in thermal cycling and isothermal oxidation test at $1100^{\circ}C$. The Pt addition in TBC system with NiCoCrAlY bond coat showed a longer life time compared to that without addition of Pt. Pt addition to TBC system is believed to help the formation of more stable thermally grown oxide, $Al_2O_3$, at the TBC/bond coat interface, leading to a longer lifetime of TBC system.

• Journal of the Korean institute of surface engineering
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• v.45 no.2
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• pp.70-74
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• 2012

In thermal barrier coating (TBC) systems, the life of the coating depends on thermally grown oxide (TGO) layer because most of the failure of TBCs occurs when TGO growth increases. In order to inhibit TGO growth, process was additionally carried out before the heat treatment of the TBC coating layer at $1200^{\circ}C$ in air. In the additional process, heat treatment in vacuum furnace of < $10^{-5}$ torr was conducted for 7 h and 14 h before the heat treatment. The area and length of TGO, as well as the crack length in the TBC were characterized using a scanning electron microscope (SEM). The TGO thickness and crack of specimens pre-heat treated in vacuum furnace were reduced by 45% compare to those heat treated in furnace. Consequently, pre-heat treatment in a vacuum furnace process lead to effective inhibition of growth of the TGO.

• Korean Journal of Metals and Materials
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• v.46 no.6
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• pp.363-369
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• 2008

Effects of top coat morphology and thickness on thermal fatigue behavior of thermal barrier coatings (TBC) were investigated in this study. Thermal fatigue tests were conducted on three coating specimens with different top coat morphology and thickness, and then the test data were compared via microstructures, cycles to failure, and fracture surfaces. In the air plasma spray specimens (APS1, APS2), top coat were 200 and $300{\mu}m$ respectively. The thickness of top coat was about $700{\mu}m$ in the perpendicular cracked specimen (PCS). Under thermal fatigue condition at $1,100^{\circ}C$, the cycles to top coat failure of APS1, APS2, and PCS were 350, 560 and 480 cycles, respectively. The cracks were initiated at the interface of top coat and thermally grown oxide (TGO) and propagated into TGO or top coat as the number of thermal fatigue cycles increased. For the PCS specimen, additive cracks were initiated and propagated at the starting points of perpendicular cracks in the top coat. Also, the thickness of TGO and the decrease of aluminium concentration in bond coat do not affect the cycles to failure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.35-43
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• 1995

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.48-51
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• 2004

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1323-1328
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• 1988

Thermally grown $SiO_2$ films on silicon have been thermally nitrided in the $NH_3$ gas ambient and their properties have been investigated by analyzing the AES data and the results of the I-V and the C-V measurements. The Auger depth profile show that the nitrogen-rich layers are formed at the nitrided oxide film surface and near the $SiO_2$-Si interface. The higher the nitridation temperature is, the larger the refractive index of nitroxide film is. And the thinner the oxide film to be nitrided for the same nitridation temperature is, the larger the refractive index of nitroxide film is. When thin $SiO_2$ film is thermally nitrided, the I-V characteristics show the Fowler-Nordheim conduction fashion. Flatband voltages of $SiO_2$ films are shifted by nitridation, due to the fixed charge formation.