• Elastomers and Composites
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• 제45권4호
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• pp.298-308
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• 2010

패럴린 박막의 기계적 성질과 표면 특성을 개선하기 위해 Xylydene계 다이머(DPX-C, DPX-D, DPX-N)를 사용하여 각각의 다이머에 대한 증착 조건과 투입량에 따른 박막의 두께를 조절함으로써 단일 패럴린-C, D, N 박막과 두 가지 타입이 혼합된 하이브리드 타입의 화학적, 물리적 패럴린 박막을 제조하였다. 패럴린 증착은 화학기상증착법(chemical vapor deposition: CVD)을 이용하였으며, 열분석을 통해 단일 박막과 하이브리드 타입의 박막에 대한 열적 특성을 비교 분석하였다. 인장 강도와 신장율 그리고 인열력 시험을 통해 박막에 대한 기계적 물성을 알아보았으며, 접촉각과 표면 에너지를 측정하여 박막에 대한 표면 특성을 관찰하였다. 두 가지 타입이 혼합된 하이브리드 타입의 화학적 패럴린 박막은 서로 다른 다이머의 장단점을 상호 보완시켜 줄 수 있으며, 물리적 패럴린 박막은 기재에 코팅되는 면과 반대 면의 박막 특성을 자유롭게 조절할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.26-26
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• 2009

Vertically aligned arrays of mm-long multi-walled carbon nanotubes (MWCNTs) on Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). The growth of CNTs was investigated by changing the experimental parameters such as growth temperature, growth time, gas composition, annealing time, catalyst thickness, and Al underlayer thickness. The 0.5-nm-thick Fe served as catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. We grew CNTs by adding a little amount of water vapor to enhance the activity and the lifetime of the catalyst. Al was very good at producing the nm-size catalyst particles by preventing "Ostwald ripening". The Al underlayer was varied over the range of 15~40 nm in thickness. The optimum conditions for the synthesis parameters were as follows: pressure of 95 torr, growth temperature of $815^{\circ}C$, growth for 30 min, 60 sccm Ar + 60 sccm $H_2$ + 20 sccm $C_2H_2$. The water vapor also had a great effect on the growth of CNTs. CNTs grew 5.03 mm long for 30 min with the water vapor added while CNTs were 1.73 mm long without water vapor at the same condition. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy. High-resolution transmission electron microscopy showed that the as-grown CNTs were of ~3 graphitic walls and ~6.6 nm in diameter.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.340-344
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• 1998

Failure mechanisms were investigated for the two layer thermal barrier coatings consisting of NiCrAlY bond coat and $ZrO_2$-8wt.% $Y_2O_3$ ceramic coating during cyclic oxidation. $Al_2O_3$ developed at the ceramic coating/bond coat interface first, followed by the Cr/Ni rich oxides such as $NiCr_2O_4$ and $Ni(Al, Cr)_2O_4$ during cyclic oxidation. It was observed that the spalling of ceramic coatings took place primarily within the NiCrAlY bond coat oxidation products or at the interface between the bond coat oxidation products and zirconia based ceramic coating or the bond coat. It was also observed that the fracture within these oxidation products occurred with the formation of $Ni(Cr, Al)_2O_4$ spinel or Cr/Ni rich oxides. It was therefore concluded that the formation of these oxides was a life-limiting event for the thermal barrier coatings.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.7-11
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• 1997

SiC/C functionally gradient material (FGMs) were formed on graphite substrates by hot-wall chemical vapor deposition (CVD) technique using the SiCl$_4$-C$_3$H8-H$_2$ chemistry. Thermochemical equilibrium calculations were carried out to investigate the deposition process. The effect of process variables on the deposition yield and the SiC/C ratio in deposited layers was studied in detail. Calculated results showed a reasonable agreement with the experiment in a qualitative sense. SiC/C FGMs with excellent mechanical and thermal properties could be successfully formed on graphite substrates by carefully controlling the compositions in the deposited layers.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집E
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• pp.213-218
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• 2001

The characteristics of the fluid flow and mass transfer in a vertical atmospheric pressure chemical vapor deposition (APCVD) are numerically studied. In order to get the optimal process parameters for the uniformity of deposition on a substrate, Navier-Stokes and energy equations have been solved for the pressure, mass-flow rate and temperature distribution in a CVD reactor. Results show that the thermal boundary condition at the reactor wall has an important effect in the formation of buoyancy-driven secondary cell when radiation effect is considered. Results also show that reduction of the buoyancy effect on the heated reactor improves the uniformity of deposition.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.109-115
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• 2005

The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2002년도 춘계학술발표회 초록집
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• pp.37-37
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• 2002

Diamoncl/Mo/Ni multi-layers on SKH-51 steel substrate was prepared to improve the abrasive wear resistance of a tool and die by a commercial chemical vapor deposition unit and electro-plating. The diamond after 7 hour deposition had cuba-octahedral structure with 2~5$\mu\textrm{m}$ grains. The existence of non-ferrous metals such as chromium, nickel and molybdenum between diamond and SKH-51 substrate results in forming higher quality of diamond layer by retarding carbon diffusion in the diamond layer during deposition, and also improving hardness and wear resistance. Surface cracks on the film was sometimes observed by the difference of by the thermal expansion coefficients between the steel substrate and the deposited layers during cooling.

• 한국세라믹학회지
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• 제56권5호
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• pp.453-460
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• 2019

To reduce residual pores of composites and obtain a dense matrix, SiC_f/SiC composites were fabricated by chemical vapor deposition (CVI) using SiC nanorods. SiC nanorods were uniformly grown in the thickness direction of the composite preform when the reaction pressure was maintained at 50 torr or 100 torr at 1,100℃. When SiC nanorods were grown, the densities of the composites were 2.57 ~ 2.65 g/㎤, higher than that of the composite density of 2.47 g/㎤ for non-growing of SiC nanorods under the same conditions; grown nanorods had uniform microstructure with reduced large pores between bundles. The flexural strength, fracture toughness and thermal conductivity (room temperature) of the SiC nanorod grown composites were 412 ~ 432 MPa, 13.79 ~ 14.94 MPa·m^1/2 and 11.51 ~11.89 W/m·K, which were increases of 30%, 25%, and 25% compared to the untreated composite, respectively.

• Carbon letters
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• 제4권1호
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• pp.36-39
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• 2003

Carbon and carbon-based materials are used in nuclear reactors and there has recently been growing interest to develop graphite and carbon based materials for high temperature nuclear and fusion reactors. Efforts are underway to develop high density carbon materials as well as amorphous isotropic carbon for the application in thermal reactors. There has been research on coated nuclear fuel for high temperature reactor and research and development on coated fuels are now focused on fuel particles with high endurance during normal lifetime of the reactor. Since graphite as a moderator as well as structural material in high temperature reactors is one of the most favored choices, it is now felt to develop high density isotropic graphite with suitable coating for safe application of carbon based materials even in oxidizing or water vapor environment. Carboncarbon composite materials compared to conventional graphite materials are now being looked into as the promising materials for the fusion reactor due their ability to have high thermal conductivity and high thermal shock resistance. This paper deals with the application of carbon materials on various nuclear reactors related issues and addresses the current need for focused research on novel carbon materials for future new generation nuclear reactors.