• 한국태양에너지학회 논문집
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• 제31권2호
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• pp.82-88
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• 2011

The artificial increase in the solar intensity incident on solar cells using lenses or mirrors can allow solar cells to generate equivalent power with a lower cost. There are two types of concentration optics for solar energy conversion. One is to use mirrors, and the other is to use Fresnel lenses. The gains that can be achieved with a Fresnel lens or a parabolic mirror are compared. The result showed the gains are comparable and the two configurations were developed competitively. In application areas of Fresnel lenses as solar concentrators, several variations of design were devised and tested. Some PV systems still use commercially available flat Fresnel lenses as concentrators. A convex linear Fresnel lens to improve the concentration ratio and the efficiency is devised and flat linear Fresnel lens in thermal energy collection is utilized. In this study, we designed and optimized flat Fresnel lens and the 'light pipe' to develop 500X concentrated solar PV system. In the process, we compare the transmission efficiencies according to groove types. We performed rigorous ray tracing simulation of the flat Fresnel lenses. The computer aided simulation showed the 'grooves in case' has the better efficiency than that of 'grooves out case'. Based on the ray-trace results we designed and manufactured sample Fresnel lenses. The optical performance were measured and compared with ray-trace results. Finally, the optical efficiency was measured to be above 75%. All the design and manufacturing were performed based on that InGaP/InGaAs/Ge triple junction solar cell is used to convert the photon energy to electrical power. Field test will be made and analyzed in the near future.

• Elastomers and Composites
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• 제41권4호
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• pp.260-267
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• 2006

유기화 클레이(organically modified layered silicates)가 보강된 SBR 나노 복합체를 라텍스법(latex method)에 의해서 제조하였다. 유기화 MMT는 dodecylamine으로 유기화한 DA-MMT와 dimethyldodecylamine으로 유기화한 DDA-MMT의 두 가지를 제조하였다. 유기화 클레이의 층간거리와 분산도를 확인하기 위하여 XRD와 TEM촬영을 하였다 Na-MMT, DA-MMT, DDA-MMT의 XRD 회절 패턴을 분석한 결과 Na-MMT는 $2{\theta}=7.2^{\circ}$로써 층간거리가 $12.3{\AA}$, DA-MMT는 $2{\theta}=5.1^{\circ}$로 층간거리가 $17{\AA}$를 나타내었으며, DDA-MMT의 경우, 회절 피크는 $2{\theta}=4.8^{\circ}$로써. 층간거리는 $18.4{\AA}$으로 나타났다. 이는 DDA-MMT와 DA-MMT가 각각 5 phr 첨가된 SBR 나노 복합체의 TEM 결과에서도 확인할 수 있었다. SBR 나노 복합체에 filler system (carbon black/silica/OLS)을 적용 후 시편을 제조하였다. 제조된 시편의 동적 점탄성 평가 (DMTA)는 $-20^{\circ}C{\sim}80^{\circ}C$ 사이에서 이루어졌으며, loss factor (tan $\delta$)의 거동을 확인하였다. 그 결과, 타이어 트래드용 컴파운드를 대상으로 할 경우, 카본블랙과 실리카의 혼용비가 35:25일 때, 빗길 제동특성과 연비특성을 대변하는 $0^{\circ}C$와 $50{\sim}60^{\circ}C$에서의 tan $\delta$가 가장 우수함을 알 수 있었다. 또한 이 시스템에 실리카의 일정 부분을 DDA-MMT($0{\sim}10phr$)로 대체할 경우, $0^{\circ}C$의 tan $\delta$값은 높아지는 반면, $50{\sim}60^{\circ}C$의 tan $\delta$값은 감소하였다.

• 공업화학
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• 제32권5호
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• pp.509-515
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• 2021

본 연구는 생체적합성 및 생분해성의 특성을 갖는 PLGA (poly lactic-co-glycolic acid)를 이용하여 이중(w/o/w) emlusion과 유화 용매-증발 기법을 통해 PLGA 나노입자(PNP)를 제조하였고, 이에 키토산을 전하 상호작용을 통해 키토산이 코팅된 PLGA 나노입자(CPNP)를 제조하여 입자의 안정성과 생체이용률을 극대화할 수 있는 경구 투여용 약물 전달체로 사용 가능성을 입증하고자 하였다. CPNP의 화학적 구조는 ¹H-NMR 및 FT-IR을 통해 분석하였으며, 모든 특성 피크가 나타남으로써 성공적으로 제조되었음을 확인하였다. 또한, CPNP의 입자 크기, 제타 전위 및 형태학적 이미지는 DLS와 TEM을 이용하여 각각 분석하였으며, TGA를 통해 CPNP의 열적 분해 거동을 관찰하였다. 또한, CPNP의 세포 독성은 HEK293 및 L929 세포에서 MTT assay를 수행하여 확인하였고, 모든 농도에서 70% 이상의 세포 생존율을 확인함으로써 독성이 없음을 입증하였다. 이러한 결과를 통해 본 연구에서 개발된 CPNP가 경구용 약물 전달체로써 사용 가능성이 있음을 제안한다.

• Nuclear Engineering and Technology
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• 제52권12호
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• pp.2860-2866
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• 2020

Oxide dispersion-strengthened materials W-1wt%Pr₂O₃ and W-1wt%La₂O₃ were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 10²¹ ions/m² under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr₂O₃ and W-1wt%La₂O₃. At 1.0 × 10²⁰ He⁺/m², the average loops size of the W-1wt%Pr₂O₃ was 4.3 nm, much lower than W-1wt% La₂O₃ of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 10²¹ He⁺/m² on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He⁺ pre-irradiation, deuterium (D) retention of doped W materials increased after He⁺ irradiation, whose retention was unsaturated at the damage level of 1.0 × 10²²D₂⁺/m². The present results implied that irradiation effect of He⁺ ions must be taken into account to evaluate the deuterium retention in fusion material applications.

• 한국수소및신에너지학회논문집
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• 제29권6호
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• pp.559-569
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• 2018

Catalytic supports made of carbon have many advantages, such as high coking resistance, tailorable pore and surface structures, and ease of recycling of waste catalysts. Moreover, they do not require pre-reduction. In this study, ash-free coal (AFC) was obtained by the thermal extraction of carbonaceous components from raw coal and its performance as a carbon catalytic support was compared with that of well-known activated carbon (AC). Nickel was dispersed on the carbon supports and the resulting catalysts were applied to the steam reforming of toluene (SRT), a model compound of biomass tar. Interestingly, nickel catalysts dispersed on AFC, which has a very small surface area (${\sim}0.13m^2/g$), showed higher activity than those dispersed on AC, which has a large surface area ($1,173A/cm^2$). X-ray diffraction (XRD) analysis showed that the particle size of nickel deposited on AFC was smaller than that deposited on AC, with the average values on AFC ${\approx}11nm$ and on AC ${\approx}23nm$. This proved that heteroatomic functional groups in AFC, such as carboxyls, can provide ion-exchange or adsorption sites for the nano-scale dispersion of nickel. In addition, the pore structure, surface morphology, chemical composition, and chemical state of the prepared catalysts were analyzed using Brunauer-Emmett-Taylor (BET) analysis, transmission electron microscopy (TEM), scanning electron microscopy (SEM), x-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, and temperature-programmed reduction (TPR).

• 대한금속재료학회지
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• 제46권11호
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• 한국분말재료학회지
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• 제28권4호
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• pp.293-300
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• 2021

We investigate the effect of phosphorous content on the microstructure and magnetic properties of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) nanocrystalline soft magnetic alloys. The simultaneous addition of Cu and P to nanocrystalline alloys reportedly decreases the nanocrystalline size significantly, to 10-20 nm. In the P-containing nanocrystalline alloy, P atoms are distributed in an amorphous residual matrix, which suppresses grain growth, increases permeability, and decreases coercivity. In this study, nanocrystalline ribbons with a composition of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) are fabricated by rapid quenching melt-spinning and thermal annealing. It is demonstrated that the addition of a small amount of P to the alloy improves the glass-forming ability and increases the resistance to undesirable Fe_x(B,P) crystallization. Among the alloys investigated in this work, an Fe_83.2Si₅B₁₀P₁Cu_0.8 nanocrystalline ribbon annealed at 460℃ exhibits excellent soft-magnetic properties including low coercivity, low core loss, and high saturation magnetization. The uniform nanocrystallization of the Fe_83.2Si₅B₁₀P₁Cu_0.8 alloy is confirmed by high-resolution transmission electron microscopy analysis.

• 헤리티지:역사와 과학
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• 제56권4호
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• pp.160-189
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• 2023

천전리 각석은 중생대 백악기 경상누층군의 대구층에 속하는 셰일층준에 새겨져 있다. 이 암석은 열변질 작용을 받아 혼펠스화 되어 경도가 높고 치밀한 조직을 보이며, 조암광물은 석영, 정장석, 사장석, 방해석, 운모, 녹니석 및 불투명 광물들로 동일한 조성을 가지나 풍화대에서는 방해석이 거의 검출되지 않는다. 각석은 일정한 깊이의 풍화대를 형성하고 있으며 풍화대와 비풍화대는 광물조성 및 화학조성의 차이가 있다. 풍화대의 CaO 함량은 비풍화대에 비해 90% 이상 감소하였으며, 이는 방해석이 물과 반응하여 용탈되었기 때문이다. X-선의 투과특성으로 각석 표면의 풍화심도를 산출한 결과, 탈락 및 박리 영역에서는 0.5~1.0mm 정도의 깊이를 보였지만 대부분 영역의 풍화깊이는 3~4mm 정도로 산출되었다. 이는 Ca과 Sr의 함량과 변화로도 입증할 수 있다. 각석의 표면변색은 색의 농도를 달리하며 분포하고, 황갈색 변색은 얇은 생물 피막층과 함께 교호하며 79.6%의 피도를 보인다. 따라서 천전리 각석의 물리화학적 및 생물학적 손상을 효과적으로 제어할 수 있는 주기적인 보존관리와 예방보존 차원의 정밀모니터링이 필요할 것이다.

• 청정기술
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• 제11권3호
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• pp.123-128
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• 2005

$TiO_2$는 금속 산화물의 일종으로서 자체가 가지고 있는 물리화학적 안정성, 무독성, 탁월한 유기물의 산화분해력 등으로 인해 저농도의 환경 유해물질 정화 분야로 응용이 활발히 연구되고 있는 반도체 물질이다. 그러나 $TiO_2$는 자외선 영역대(${\lambda}$ < 387 nm, 태양광의 2.7%가 UV)의 빛을 통해서 활성을 나타내고, 여기된 전자의 빠른 전자-정공 재결합속도로 인해 광 효율이 저하되는 단점을 갖는다. 따라서 광 감응 파장대를 넓히고 재결합속도를 길게 함으로써 광효율을 높이고, 광촉매 활성을 증대하는 방향으로 연구의 초점이 모아지고 있는 실정이다. 본 연구에서는 $TiO_2$ 광촉매의 광 감응 파장대를 가시광선 영역으로 확대함과 동시에 여기된 전자와 정공의 재결합시간을 연장하기 위하여 백금(Pt)이 광침적(photodeposition)된 탄소(C) 도핑 $TiO_2$를 제조하였다. 제조한 $Pt-C-TiO_2$의 특성은 전자투과현미경(Transmission Electron Microscopic; TEM), 질소흡탈착법(Brunauer-Emmett-Teller method; BET), X-ray 회절 분석법(X-ray Diffractometer; XRD), 분광 산란 광도계(UV-visible diffuse reflectance spectroscopy; UV-Vis DRS), X-ray 광전자 광도계(X-ray Photoelectron Spectroscopy; XPS)를 통하여 살펴보았다. $Pt-C-TiO_2$의 광촉매 활성을 검증하기 위하여 아조 계열의 붉은색 염료인 Acid Red 44 ($C_{10}H_7N=NC_{10}H_3(SO_3Na)_2OH$)의 광분해 실험을 수행하였다. 광원은 Xe arc 램프(300 W, Oriel)를 사용하였으며 420 nm 이하 제거 필터를 사용하여 가시광 영역대의 빛만을 조사되도록 하였다. 그 결과, 제조한 $Pt-C-TiO_2$는 가시광선 하에서 사용제품과 비교하여 월등히 뛰어난 분해력을 보이며 $C-TiO_2$의 활성을 한 층 더 향상시킴을 확인하였다. 이는 무한 에너지 자원인 태양광을 이용한 염료 폐수 정화 시스템 응용으로의 유용한 결과라 할 수 있겠다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).