• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.16-22
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• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.95-103
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• 2005

The interfacial reaction between 42Sn-58Bi solder (in wt.$\%$ unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and $1{\mu}m$ was plated on the $5{\mu}m$ thick electroless Ni-P ($14{\~}15 at.\%$P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The $Ni_3Sn_4$ layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at $125^{\circ}C$, a quaternary phase (IMC2) was observed above the $Ni_3Sn_4$ layer in the Au-containing UBM structures, which was identified as $Sn_{77}Ni{15}Bi_6Au_2$ (in at.$\%$). The thick $Sn_{77}Ni{15}Bi_6Au_2$ layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about $40\%$ compared with non-aged joints.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.7-15
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• 2012

Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.15-20
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• 2007

Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and $165^{\circ}C$ for 300h. In result, $Cu_6Sn_5\;and\;Cu_3Sn$ were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and $Cu_3Sn$ as well as within the $Cu_3Sn$ layer and propagated with increasing time. $(Cu,Ni)_6Sn_5$ formed at interface between SnPb and Ni(P) after reflow and thickness change of $(Cu,Ni)_6Sn_5$ didn't observe with aging time. The apparent activation energies for growth of total $(Cu_6Sn_5+Cu_3Sn),\;Cu_6Sn_5\;and\;Cu_3Sn$ intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.239-242
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• 2006

LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of kernel parts of LCD unit and it consists of several optical sheets(such as prism, diffuser and protector sheets), LGP (Light Guiding Plate), light source (CCFL or LED) and mold frame. The LGP of LCD-BLU is usually manufactured by forming numerous dots with $50{\sim}200$ um in diameter on it by etching process. But the surface of the etched dots of LGP is very rough due to the characteristics of the etching process during the mold fabrication, so that its light loss is high along with the dispersion of light into the surface. Accordingly, there is a limit in raising the luminance of LCD-BLU. In order to overcome the limit of current etched dot patterned LGP, optical pattern design with 50um micro-lens was applied in the present study. The micro-lens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP. The attention was paid to the effects of different aspect ratio (i.e. $0.2{\sim}0.5$) of optical pattern conditions to the brightness distribution of BLU with micro-lens patterned LGP. Finally, high aspect ratio micro-lens patterned LGP showed superior results to the one made by low aspect ratio in average luminance.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.47-54
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• 2008

In this paper, we studied how and why did abnormal IMC growth at component affect on board level mechanical reliability. First, interfacial reactions between Sn2.5Ag0.5Cu solder and electrolytic Ni/Au UBM of component side were investigated with reflow times and thermal aging time. Also, to compare mechanical reliability of component level, shear energy was evaluated using the ball shear test conducted with variation of shear tip speed. Finally, to evaluate mechanical reliability of board level, we surface-mounted component fabricated with each condition on PCB side. After conducting of 3 point bending test and impact test, we confirmed solder joint crack mode using cross-sectioning and dye & pry penetration method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.75-76
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• 2006

LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of kernel parts of LCD unit and it consists of several optical sheets(such as prism, diffuser and protector sheets), LCP (Light Guide Plate), light source (CCFL or LED) and mold frame. The LGP of LCD-BLU is usually manufactured by forming numerous dots with $50{\sim}200{\mu}m$ in diameter on it by erosion method. But the surface of the erosion dots of LGP is very rough due to the characteristics of the erosion process during the mold fabrication, so that its light loss is high along with the dispersion of light into the surface. Accordingly, there is a limit in raising the luminance of LCD-BLU. In order to overcome the limit of current dot patterned LGP, optical pattern design with $50{\mu}m$ micro-lens was applied in the present study. Especially, the negative and positive micro-lens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP. The attention was paid to the effects of different pattern conditions to the brightness distribution of BLU with micro-lens patterned LGP. Finally, negative micro-lens patterned LGP showed superior results to the one made by positive in average luminance.

• Design & Manufacturing
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• v.2 no.2
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• pp.29-32
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• 2008

A back light unit (BLU) is a key module of a thin film transistor liquid crystal display (TFT-LCD), frequently utilized in various mobile displays. In this study, we experimentally characterize transcription and optical properties of concave and convex microlens arrays (MLAs) of light guide plate (LGP) fabricated by injection molding with polycarbonate as a LGP substrate material. Nickel mold inserts were manufactured by electroforming on the MLA which was fabricated by the thermal reflow of photoresist microstructures patterned by UV-photolithography. For the case of convex microlens, the height of replicated microlens was less than that of the mold insert while maintaining almost the same microlens diameter of the mold insert as the location of the microlens is far from the gate. In contrast, for the concave microlens, the diameter of replicated microlens was larger than that of mold insert, while showing almost the same microlens height as the mold insert. From the optical examination of replicated convex and concave MLAs, it was found that a higher luminance of the LGP was achieved by the concave MLAs compared to the convex MLAs (about 30% enhancement in this case)due to the utilization of a larger amount of light provided by the light sources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.6-12
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• 2019

Bonding properties of epoxy-containing solder joints were investigated by a high temperature aging test. Specimens were prepared by bonding an R3216 standard chip resistor to an OSP-finished PCB by a reflow process with two basic types of solder (SAC305 & Sn58Bi) pastes and two epoxy-solder (SAC305+epoxy & Sn58Bi+epoxy) pastes. In all epoxy solder joints, an epoxy fillet was formed in the hardened epoxy, lying around the outer edge of the solder joint, between the chip and the Cu pad. In order to analyze the bonding characteristics of solder joints at high temperatures, a high-temperature aging test at $150^{\circ}C$ was carried out for 14 days (336 h). After aging, the intermetallic compound $Cu_6Sn_5$ was found to have formed in the solder joint on the Cu pad, and the shear stress on the conventional solder joint was reduced by a significant amount. The reason that the shear force did not decrease much, even though in epoxy solder, was thatbecause epoxy hardened at the outer edge of the supported solder joints. Using epoxy solder, strong bonding behavior can be ensured due to this resistance to shear force, even in metallurgical changes such as those where intermetallic compounds form at solder joints.