• 제어로봇시스템학회논문지
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• 제6권1호
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• pp.104-111
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• 2000

A fuzzy logic Run-by-Run(RbR) controller and an in -line wafer characteristics prediction scheme for the rapid thermal processing system have been developed for the study of process repeatability. The fuzzy logic RbR controller provides a framework for controlling a process which is subject to disturbances such as shifts and drifts as a normal part of its operation. The fuzzy logic RbR controller combines the advantages of both fuzzy logic and feedback control. It has two components : fuzzy logic diagnostic system and model modification system. At first, a neural network model is constructed with the I/O data collected during the designed experiments. The wafer state after each run is assessed by the fuzzy logic diagnostic system with featuring step. The model modification system updates the existing neural network process model in case of process shift or drift, and then select a new recipe based on the updated model using genetic algorithm. After this procedure, wafer characteristics are predicted from the in-line wafer characteristics prediction model with principal component analysis. The fuzzy logic RbR controller has been applied to the control of Titanium SALICIDE process. After completing all of the above, it follows that: 1) the fuzzy logic RbR controller can compensate the process draft, and 2) the in-line wafer characteristics prediction scheme can reduce the measurement cost and time.

• 한국정밀공학회지
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• 제31권4호
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• pp.297-301
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• 2014

The biggest factors, which lower the machining accuracy of machine, are thermal deformation and chatter vibration. In this article, we introduce the development case of a device and technology that can automatically compensate thermal deformation errors of machine during long-time processing on the machine tool's CNC (Computerized Numerical Controller) in real time. In machine processing, the data acquisition of temperature signal in real time and auto-compensation of the machine origin of machine tools depending on thermal deformation have significant influence on improving the machining accuracy and the rate of operation. Thus, we attempts to introduce the related contents of the development we have made in this article : The development of a device that embedded the acquisition part of temperature data, linear regression to get compensation value, compensation model of neural network and a system that compensates the machine origin of machine tool automatically during manufacturing process on the CNC.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.111.1-111.1
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• 2011

The solar energy is dramatically increasing as the alternative energy source and the silicon(Si) solar cell are used the most. In this study, the improved process and equipment for the metallurgical refinement of multicrystalline Si were evaluated for the inexpensive solar cell. The planar plane and columnar dendrite aheadof the liquid-solid interface position caused the superior segregation of impurities from the Si. The solidification rate and thermal gradient determined the shape of dendrite in solidified Si matrix solidified by the directional solidification(DS) method. To simulate this equipment, the commercial software, PROCAST, was used to solve the solidification rate and thermal gradient. Si was vertically solidified by the DS system with Stober process and up-graded metallurgical grade or metallurgical grade Si was used as the feedstock. The inductively coupled plasma mass spectrometry (ICP) was used to measure the concentration of impurities in the refined Si ingot. According to the result of ICP and simulation, the high thermal gradient between the two phases wasable to increase the solidification rate under the identical level of refinement. Also, the separating heating zone equipped with the melting and solidification zone was effective to maintain the high thermal gradient during the solidification.

• 한국산업융합학회 논문집
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• 제6권4호
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• pp.269-275
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• 2003

A non-thermal plasma process combined with $Cr_2O_3/TiO_2$ catalyst was applied to the decomposition of trichloroethylene (TCE). A dielectric barrier discharge reactor operated with AC high voltage was used as the non-thermal plasma reactor. The effects of reaction temperature and input power on the decomposition of TCE and the formation of byproducts including HCl, $Cl_2$, CO, NO, $NO_2$ and $O_3$ were examined. At an identical input power, the increase in the reaction temperature from 373 K to 473 K decreased the decomposition of TCE in the plasma reactor. The presence of the catalyst downstream the plasma reactor not only enhanced the decomposition of TCE but also affected the distribution of byproducts, significantly. However, synergistic effect as a result of the combination of non-thermal plasma with catalyst was not observed, i.e., the TCE decomposition efficiency in this plasma-catalyst combination system was almost similar to the sum of those obtained with each process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• 한국도로학회논문집
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• 제20권4호
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• pp.1-6
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• 2018

PURPOSES : The objective of this study is to evaluate of the effect of thermal segregation reduction in asphalt paving using material transfer vehicles (MTVs). METHODS : Asphalt paving using MTVs was carried out, and the paved surface temperature was measured using an infrared camera. The amount of thermal segregation was estimated from temperature variations. RESULTS : The transportation of hot mix asphalt (HMA) using dump trucks caused temperature segregation that persisted in the paving surface if an MTV was not used. The average temperature variation was 8.58% in paved surfaces where an MTV was not used. However, the temperature variation was 3.10%, 2.86%, and 4.53% for the base layer, inter-layer, and surface layer, respectively, when an MTV was used. CONCLUSIONS : The use of an MTV in asphalt paving reduces thermal segregation approximately 2.3 times in an asphalt mat via a remixing process and also allows for a smoother work process because the paver never needs to stop to receive HMA. However, MTV equipment without pre-heating devices requires careful temperature control during the warm up process at the MTV during construction in the winter.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.466-467
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• 2005

Al doped zinc oxide films (ZnO:Al) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The as-deposited ZnO:Al films were rapid-thermal annealed. Electrical properties and structural evolution of the films, as annealed by rapid thermal process (RTP), were studied and compared with the films annealed by conventional annealing process. RTP, the (002) peak intensity increases and the electrical resistivity decreases by 20%, after RT annealing. The effects of RT annealing on the structural evolution and electrical properties of RF sputtered films were further discussed and compared also with the films deposited by DC magnetron sputtering.

• 한국안전학회지
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• 제34권4호
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• pp.32-40
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• 2019

During the manufacturing process of a printed circuit board(PCB), fumes and mists are generated as the ink dries on the PCB surface. The generated fumes and mists are deposited in the dryer wall and the exhaust duct. Deposited fumes and mists may present a fire hazard if the dryer temperature control system fails. In this study, the thermal stability of the fumes and mists deposited in the dryer and ducts has been analyzed by experimental methods such as thermo gravimetric analysis (TGA), differential scanning calorimetry (DSC), auto ignition temperature (AIT), and multiple mode calorimetry(MMC). According to the experimental analyses, experimental samples are likely to generate gas at the temperature ($180{\sim}240^{\circ}C$) that deviates from the normal operating temperature ($150{\sim}156^{\circ}C$). It has been shown that the thermal stability is degraded when the temperature is deviated from the normal operating temperature. In the end, engineering and management safety measures of accidental prevention have been suggested.

• 자원리싸이클링
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• 제18권3호
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• pp.55-61
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• 2009

안료 생산 공정의 슬러지로부터 물을 제거하는 감량화 공정은 제품의 질 향상, 건조경비 절감 그리고 안료 운송경비 절감 등의 다양한 측면에서 매우 중요하다. 안료입자는 크기가 $5{\mu}m$ 이하로 미세하여 기계적인 힘에 의한 탈수가 어렵다. 미세입자의 탈수율 향상을 위해 기존의 필터프레스 탈수장치의 압착판 사이에 고정 열판을 장착하고, 열수를 고정열판에 공급하여 케이크 층에 열을 공급하여 슬러지 탈수하는 열필터프레스 탈수장치를 개발하였다. 이 장치를 통해 압착공정의 유무 탈수시간 변화와 같은 변수 실험을 통해 안료슬러지에 대한 탈수율 평가하였다. 그 결과 열 탈수 시 압착공정에 의한 탈수율이 비압착공정에 비하여 약 20% 증가하였다. 압착공정이 있는 경우, 탈수시간을 70분과 80분으로 하여 수행한 결과 탈수시간이 80분으로 길게 하였을 때, 함수율 46.7wt%에서 43.9wt%로 감소하였고, 탈수속도는 $4.0DSkg/m^2{\cdot}hr$에서 $3.5DSkg/m^2{\cdot}hr$으로 감소한 것으로 분석되었다. 열 탈수는 케이크 층으로부터 액체의 배출을 원활이 할 수 있어 장치의 여과포 막힘 현상(Clogging)을 최소화 할 수 있음을 관찰하였다. 따라서 본 연구를 통해, 압착공정이 탈수율 향상에 효과적이며, 탈수시간이 80분으로 길게 할 경우, 저함수율 탈수 케이크를 생산할 수 있지만 탈수속도의 감소로 인한 생산량 저감을 초래할 수 있다. 즉 본 연구에서 개발한 열필터프레스 탈수장치를 안료와 같은 미세입자가 함유된 슬러지에 적용한다면 보다 효과적으로 탈수케이크를 생산 할 수 있을 것으로 분석된다.