• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
• /
• pp.704-708
• /
• 2004

Recently, many nation have released standard such as IEC 61000-3-2 and IEEE 59, which impose a limit on the harmonic current drawn by equipment connected to AC line in order to prevent the distortion of an AC Line. Therefore, Plasma Display Panel (PDP) which is highlightened in digital display device also has the Power Factor Correction (PFC) circuit to meet the harmonic requirements. In PDP power module, the conventional boost converter is usually used for the PFC circuit. However, it comes serious thermal problem on it's bridge diode due to heat of PDP, and therefore the system stability is not guaranteed. In this paper, the bridgeless boost converter, which is used for PFC circuit of the PDP power module, is designed and verified the possibility of the application in a practical product in a view of efficiency, component count, temperature and etc.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전력기술부문
• /
• pp.360-362
• /
• 2006

가용송전용량(Available Transfer Capability : ATC) 계산을 위해 우선 견정해야할 요소는 총 송전용량(Total Transfer Capability : TTC)이며 이는 일반적으로 열, 전압, 안정도 한계치에 의해 결정된다. 국내 계통의 송전선로 길이를 고려할 때, 이 세 가지 한계치 중 열 정격은 TTC 결정에 가장 큰 비중을 차지하는 요소이다. 따라서 본 논문은 열적 한계치에 동적 송전용량(Dynamic Line Rating : DLR)의 개념을 도입 하여 TTC를 결정하는 새로운 접근법을 제안한다. 이 방법은 기존의 방법에 비해 주변 환경의 물리적 변화에 따른 정확한 계산 결과를 제공함으로서, 실제 사용가능한 용량을 평가한다. 마지막으로 제안하는 방법의 유용성을 보이기 위해 IEEE-24 모선 RTS를 이용하여, 기존의 방법과 제안하는 방법을 비교하였다.

• 마이크로전자및패키징학회지
• /
• 제22권1호
• /
• pp.1-5
• /
• 2015

Recently, data throughput of smart electric devices increases dramatically. There is a great interest in a new technology which exceeds the limit of electrical transmission method. Optical PCB can supplement the weakness of electrical signal processing, the research for optical PCB is very active. In this paper, we propose the thermal imprint lithography process to fabrication optical layer of optical PCB and experiment to optimize the process conditions. We confirm process time, pressure, process temperature, demolding temperature and fabricate optical interconnection structure which has $45^{\circ}$ tilted mirror surface for confirm the interconnection efficiency.

• Nuclear Engineering and Technology
• /
• 제52권4호
• /
• pp.856-862
• /
• 2020

Defect inspection system for industrial applications takes the important portion. Non-destructive inspection method has been significantly improved. Infrared thermography, as one of method for non-destructive inspection, can provide relatively precise data and quick inspection time. This study, it was performed to measure defect according to the measurement limit of the non-visible areas such as the back surface of the pipe using reflection plate using reflection plate based on Infrared thermography. The materials of the reflection plate were determined in consideration of the space limitation and the thermal characteristics, and defects were detected by the manufactured reflection plate. Detection of defect in non-visible area using the candidate materials for reflection plate was conducted.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.125-125
• /
• 2010

The Hybrid Fault current limit combined the semiconductor switching components, for example IGBT, with mechanical fast switch reduced mechanical and thermal stress on electrical machines, for example circuit breaker, transformer, and so on, in the electric network. We had focused on reducing the voltage stress of the semiconductor switching components by the mechanical fast switch. As a result, we could dramatically reduce amount of semiconductor switching components only using parallel arrangement of them, not series.

• 한국양식학회지
• /
• 제14권1호
• /
• pp.51-56
• /
• 2001

At 5$^{\circ}C$ incubation of the brooded eggs of the snow crab, Chionoecetes opilio lasted for 297 days; freshly hatched prezoea molted to become the first zoea in one hour. Length (from the tip of the rostral spines to the tip of the dorsal spines) of the first and second zoeae measured 4.8 and 6.4mm, respectively. Experimental rearing of the larvae at 5, 10, 15 and 2$0^{\circ}C$ indicated that the upper limit of thermal tolerance is 15$^{\circ}C$, as all the reared larvae succumbed at 2$0^{\circ}C$. Intermolt period from the first the first zoea to the second was 57, 32 and 23 days at 5, 10 and 15$^{\circ}C$, respectively and that of the second zoea was 52, 29 and 90 days, respectively. Largest number of larvae survived at 1$0^{\circ}C$.

• ETRI Journal
• /
• 제25권4호
• /
• pp.247-252
• /
• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• 대한기계학회논문집B
• /
• 제20권9호
• /
• pp.2981-2990
• /
• 1996

Dual solutions for steady natural convection of air between two horizontal concentric cylinders are numerically investigated in the range of $D_i$/TEX>/L(=diameter of inner cylinder/gap width)$\leq$10. It is found that, when the Rayleigh number based on the gap width exceeds a certain critical value, a new flow pattern forming two counter-rotating eddies in the half of the annulus can be realized, which is different from the crescent-shaped flow commonly observed. In the new flow pattern, the fluid near the top of the hot inner cylinder moves downward. This solution is found for D$_{i}$/L.geq.0.3, but not for$D_i$/TEX>/L$\leq$0.2. As $D_i$/TEX>/L increase, the critical Rayleigh number is decreased, and tends to a finite limit.t.

• 한국에너지공학회:학술대회논문집
• /
• 한국태양에너지학회, 한국에너지공학회 1993년도 춘계 공동학술발표회 초록집
• /
• pp.53-59
• /
• 1993

The interests on GaAs solar cell grown on Ge substrates as an alternative of GaAs substrate arises from its very close lattice parameters, very small difference in thermal expansion coefficients, and much higher fracture toughness between GaAs and Ge. In addition, for many space power application, it would be a most attractive solar cell with high radiation resistance of GaAs and high reliability for the reverse current damage of Ge, and expecting the theoretical efficiency limit of the tandem GaAs/Ge solar cell is 34% under 1 Sun, AM 0, and 28$^{\circ}C$ condition. In this report, we have reviewed the performance and the manufacturing technics of GaAs/Ge solar cell, and current status of research in GaAs/Ge solar cell.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
• /
• pp.688-691
• /
• 1997

Good quality superconducting $YBa_2Cu_30_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with yttria-stabilized zirconia(YSZ) buffer layers by in situ pulsed laser deposition in a multi-target processing chamber. Generally, Hastelloy exhibits excellent resistance to corrosion, fatigue, thermal shock, impact, and erosion. However, it is difficult to make films on flexible metallic substrates due to interdiffusion problems between metallic substrates and superconducting overlayers. To overcome this difficulty, it is necessary to use YSZ buffer layer since it will not only limit the interdiffusion process but also minimize the surface microcrack formation due to smaller mismatch between the film and the substrate. In order to enhance the crystallinity of YBCO films on metallic substrates, YSZ buffer layers were grown at various temperatures different from the deposition temperature of YBCO films. On YSZ buffer layer grown at higher temperature than that for depositing YBCO film, the YBCO thin film was found to be textured with c-axis orientation by x-ray diffraction and had a zero-resistance critical temperature of about 85K.