• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.3-6
• /
• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.9-12
• /
• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• Journal of the Korean institute of surface engineering
• /
• v.52 no.2
• /
• pp.58-61
• /
• 2019

The aim of this study is to quantitatively demonstrate the possibility of heat transfer by thermal radiation by comparing heat transfer by conventional heat transfer and radiation by radiation. 1) The heat transfer was measured by using filler of TIM material with low thermal conductivity (CuS). As a result, heat transfer was easier than ceramic with high thermal conductivity ($Al_2O_3$ and $Si_3N_4$). 2) The reason for this is thought to be that the infrared wave due to radiation of the air diaphragm has moved easily. 3) From the above results, the heat dissipation of the TIM material indicates the possibility of heat transfer by thermal radiation.

• Progress in Superconductivity and Cryogenics
• /
• v.15 no.2
• /
• pp.48-51
• /
• 2013

The thermal contact resistance (TCR) is one of the important components in the cryogenic systems. Especially, cryogenic measurement devices using a cryocooler can be affected by TCR because the systems have to consist of several metal components in contact with each other for heat transferring to the specimen without cryogen. Therefore, accurate measurement and understanding of TCR is necessary for the design of cryogenic measurement device using a cryocooler. The TCR occurs at the interface between metals and it can be affected by variable factors, such as roughness of metal surface, contact area and contact pressure. In this study, we designed TCR measurement system at various temperatures using a cryocooler as a heat sink and used steady state method to measure the TCR between metals. The copper is selected as a specimen in the experiment because it is widely used as a heat transfer medium in the cryogenic measurement devices. The TCR between Cu and Cu is measured for various temperatures and contact pressures. The effect of the interfacial materials on the TCR is also investigated.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.14 no.3
• /
• pp.547-553
• /
• 1990

With alumina ceramics to copper brazement of cylindrical shape, the thermal stress analysis was carried out by finite element method. Elastic and plastic behaviour was considered to copper, but only elastic behaviour was considered to alumina. Also material properties of alumina and copper were considered in not constant values but variable functions dependent on temperature. The result of analysis is shown that maximum tensile longitudinal stress is occurred at perimeter of alumina side interface and maximum compressive radial and tangential stresses are occurred at center of alumina side interface. Because of bending effect, tensile raidial and tangential stresses are occurred at near bottom of alumina, far from interface.

• Journal of Radiation Industry
• /
• v.5 no.1
• /
• pp.95-99
• /
• 2011

The electrical and mechanical properties of electrode for radiation detection are very important. In general, Au electrode and CZT crystal are combined to form ohmic contacts, and the best energy resolution is shown at the Au electrode. The metal contacts are fabricated by electroless deposition method, sputtering deposition method and thermal evaporation method. The electrode fabrication is easy with use of the thermal evaporation method, while an adhesive strength is weak. Thus interface materials such as Ag, Al and Ni were investigated to overcome defects generated by the this method. The thickness of the interface material between the Au electrode and the CZT crystal was 100 Angstroms, the Au electrode with thickness of 400 Angstroms was deposited. The Al+Au electrode is shown that the results of current-voltage and radiation response are similar to results of Au electrode.

• International Journal of Korean Welding Society
• /
• v.2 no.1
• /
• pp.1-10
• /
• 2002

The thermal contact conductance at different temperatures and with different electrode forces and zinc coating morphology was measured by monitoring the infrared emissions from the one dimensionally simulated contact heat transfer experiments. The contact heat transfer coefficients were presented as a function of the harmonic mean temperature of the two contacting surfaces. Using these contact heat transfer coefficients and experimentally measured temperature profiles, the electrical contact resistivities both for the faying interface and electrode-workpiece interface were deduced from the numerical analyses of the one dimension simulation welding. It was found that the average value of the contact heat transfer coefficients for the material with zinc coating (coating weight from 0 g/$mm^2$to 100 g/$mm^2$) ranges from 0.05 W/$mm^2$$^{\circ}C$ to 2.0 W/$mm^2$$^{\circ}C$ in the temperature range above 5$0^{\circ}C$ harmonic mean temperature of the two contacting surfaces. The electrical contact resistivity deduced from the one dimension simulation welding and numerical analyses showed that the ratio of electrical contact resistivity at the laying interface to the electrical contact resistivity at the electrode interface is smaller than one far both bare steel and zinc coated steel.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.25-29
• /
• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.23 no.5
• /
• pp.435-443
• /
• 2020

Thermal barrier coating(TBC) applied to fighter and turbine engines is a technology that improves the durability of core parts by lowering the surface temperature of base material. The thermal stress caused by mis-match of the coefficient of thermal expansion between the top coating and the TGO interface is the main cause of TBC breakage. Since the thermal stress is dependent on the microstructure of the TBC, designing microstructure of TBC can improve the durability as well as lower the thermal stress. In this study, the effect of coating thickness, volume of porosity and vertical cracking on the thermal stress was analyzed through finite element analysis. Through the analysis results, a design range of a microstructure that can improve the durability of thermal barrier coating by lowering thermal stress is proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.2
• /
• pp.119-126
• /
• 2002

The mica/epoxy composite used in generator(rated 22 kV and 500 MW) stator windings was aged at 180$\^{C}$ for up to 1000 hours in air and hydrogen. The degradation mechanism was investigated through the defect of evolution and microstructural analysis by performing SEM(Scanning Electron Microscope). As the thermal aging time increases, the number of voids per unit volume increases at the mica/epoxy interface of generator stator windings. The aged specimens in hydrogen showed retarded generation and growth of voids. Accelerated aging tests were conducted using the combination of thermal and electrical aging in air and hydrogen. The aging was carried out at a combined stress such as thermal aging at 110$\^{C}$, electrical aging at 5.5 kV/mm and frequencies 420 Hz in air, and electrical aging at 5.5 kV/mm and frequencies 420 Hz in hydrogen (pressure 4 kg/㎠). Thermal and electrical aging generates large voids at the mica/epoxy interface in air. Electrical aging in hydrogen also generates small voids, delaminations and cracks in mica tapes.