• Proceedings of the Korean Institute of Building Construction Conference
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• 2012.11a
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• pp.211-212
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• 2012

To prevent energy waste in buildings used heat insulator. Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. Technologies on energy saving and materials used in curtain walls have progressed with increase of high-rise and large buildings. However, there is little study to explain fire resistance performance of the curtain walls. This study focused on evaluation of the physical properties of light-weight inorganic foam panel for using industrial by-products materials and performance evaluation by mock up test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.104-107
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• 2003

The ageing cause in many porcelain suspension insulators which occur on transmission and distribution line with dead-end stings is mechanical stress in interface between porcelain and cement materials. It is known that the principal mechanical stress which give electrical failure is the results of the displacement is due to cement growth. We studied an analysing method to find out a deformation of brittle porcelain with a thermal expansion of cement for suspension insulator. These simulation analysis and experimental results show that cement volume growths affect severely to be mechanical failure ageing. These simulation analysis and experimental results show that axial loading affects of Porcelain insulators severely to be mechanical failure ageing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2011.11a
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• pp.79-81
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• 2011

To prevent energy waste in buildings used heat insulator. Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. This study focused on evaluation of the physical properties and fire-resistance of inorganic foam material for using industrial by-products materials for the applicability of Fire-resistance Light-weight material.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2016.05a
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• pp.124-125
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• 2016

This study is to development of inorganic insulation material using by-product materials. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials.In this study, cullet and fly ash were used as basic materials in order to secure a recycling technology of by-products which was mostly discarded and reclimed, and measure of physical properties of light-weight ceramic insulator.

• Proceedings of the KSR Conference
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• 2009.05a
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• pp.1963-1969
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• 2009

This paper introduces method to estimate pollutant negative influence to polymer type insulator according to the international standard. To accomplish this goal, effective sample collecting method was surface was collected directly with the same dimension. Distilled Through this method pollute is easily and accurately collected. The second step is pollutant analysis. Several analyze item is selected such as quantity, conductivity, contact angle, Optical Microscope(OM), IR spectrometer(FT-IR), Equivalent Salt Deposit Density(ESDD), Thermal Analyzer(TA) and ICP-AES. The third step, best represent tunnel was selected considering location, length and natural surroundings. Also to consider the difference at inside the tunnel, several bracket insulators were selected along to the location. To make the result precise, above procedure was repeated several times at the same target. Finally relation among type of train, numbers of movement, surroundings, length will be considered in combination with the pollution. With this result pollute map for KORAIL could be accomplished and inspect period will be optimized case by case.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.147-150
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• 1998

Since P-ELD(powders type electroluminescent device) phenomena were found by G.Destriau at first In 1936, lots of studying was performed in order to realize surface emission devices and flat panel display as a backlight. Due to the problem of low luminance and color and so on, it was delayed. Recently using electric field and thermal effect which can change it\`s molecular arrangement, it can be developed using photoelectric properties of P-ELD. P-ELD in this study was prepared by casting method. Basic structure is ITO/Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p(poise) for phosphor, 8p(poise) fort insulator. Dielectric properties was investigated first and emission properties of P-ELD based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. P-ELD prepared in this work exhibits about 100cd/㎡ 1-kHz simusoidal excitation.