• Journal of the Korean Society of Radiology
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• v.3 no.4
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• pp.29-33
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• 2009

Recently, the compound materials(a-Se, $HgI_2$, PbO, CdTe, $PbI_2$, etc.) that are used in flat panel x-ray imager have been studied for digital x-ray imaging. In this paper, the signal detection properties of $HgI_2$ and a-Se conversion layer, are compared. The thick $HgI_2$ film is fabricated by special particle-in-binder method and the conventional vacuum thermal evaporation is used for a deposition of a-Se film. And an electrical characteristic measurements were investigated about leakage current, signal response property and x-ray sensitivity. From the experimental results show that the $HgI_2$ film has a low operation voltage and high signal generation than that of a-Se.

• Journal of Energy Engineering
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• v.19 no.2
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• pp.73-80
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• 2010

A solid oxide fuel cells(SOFC) is a clean energy technology which directly converts chemical energy to electric energy. When the SOFC is used in cogeneration then the efficiency can reach higher than 80%. Also, it has flexibility in using various fuels like natural gases and bio gases, so it has an advantage over polymer electrolyte membrane fuel cells in terms of fuel selection. A typical cathode material of the SOFC in conjunction with yttria stabilized zirconia(YSZ) electrolyte is still Sr-doped $LaMnO_3$(LSM). Recently, application of mixed electronic and ionic conducting perovskites such as Sr-doped $LaCoO_3$(LSCo), $LaFeO_3$(LSF), and $LaFe_{0.8}Co_{0.2}O_3$(LSCF) has drawn much attention because these materials exhibit lower electrode impedance than LSM. However, chemical reaction occurs at the manufacturing temperature of the cathode when these materials directly contact with YSZ. In addition, thermal expansion coefficient(TEC) mismatch with YSZ is also a significant issue. It is important, therefore, to develop cathode materials with good chemical stability and matched TEC with the SOFC electrolyte, as well as with high electrochemical activity.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.6
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• pp.397-402
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• 2016

To produce adequate electricity in nuclear and thermal power plants, an optimal amount of steam should be supplied to a generator connected to high- and low-pressure steam turbines. A turbine output control device, which is a special steam valve employed to supply or interrupt the steam to the turbine, is operated using a hydraulic servo actuator. In power plants, the performance of servo actuators is degraded by the air generated from the hydraulic system, or causes frequent failures owing to an increase in the wear of the seal. This is due to the seal being burnt as generated heat using the produced compressed air. Some power plants have exhausted air using a fixed orifice, and thus they encounter power loss due to mass flow exhaust. Failures are generated in hydraulic pumps, electric motors, and valves, which are frequently operated. In this study, we perform modeling and analysis of the load-sensing air-exhaust valves, which can be passed through very fine flow under normal use conditions, and exhaust mass flow air at the beginning stage as with existing fixed orifices. Then, we propose a method to prevent failures due to the compressed air, and to ensure the control accuracy of hydraulic servo actuators.

• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.203-218
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• 2009

The development of lithium-ion battery (LIB) technologies and their application in the field of large-scale power sources, such as electric vehicles (EVs), hybrid EVs, and plug-in EVs require enhanced reliability and superior safety. The main components of LIBs should withstand to the inevitable heating of batteries during high current flow. Carbonate solvents that contribute to the dissociation of lithium salts are volatile and potentially combustible and can lead to the thermal runaway of batteries at any abuse conditions. Recently, an interest in nonflammable materials is greatly growing as a means for improving battery safety. In this review paper, novel approaches are described for designing highly safe electrolytes in detail. Non-flammability of liquid electrolytes and battery safety can be achieved by replacing flammable organic solvents with thermally resistive materials such as flame-retardants, fluorinated organic solvents, and ionic liquids.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.227-234
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• 2006

Microstructures of free surface and interior of glass-ceramics obtained by heat treating silicate glass specimen containing electric arc furnace dust(EAF dust) were observed. The crystallization temperature, $T_c$ of glassy specimen was measured around $850^{\circ}C$ from the result of different thermal analysis so heat treatment temperature to obtain glass-ceramic specimen was selected as $950^{\circ}C$ for 1 hr. Glass specimens containing 50 wt% dust were amorphous, while glass specimens containing 70 wt% dust showed spinel crystal peaks in XRD results. In case of glass-ceramic specimens, spinel crystalline phase was appeared with willemite, and willemite crystal peak intensity increased with increasing dust contents. The fractured surface of glass specimens containing 50 wt% dust was smooth like mirror surface, but that containing 70 wt% dust showed spinel crystals of 10 ${\mu}m$ size in glass matrix. In case of glass-ceramic specimens, ZnO crystal particles of $2{\sim}5{\mu}m$ size were produced in free surface and glassy phase, spinel and willemite crystal phases existed in interior. There were no crystals in glasses containing 50 wt% dust, while glass containing 70 wt% dust had 14 vol% crystals. Crystallinity of glass-ceramic specimens containing 50 and 70 wt% dust were 19 and 43%, respectively. When microstructures of glass and glass-ceramic specimens were observed through SEM after TCLP experiment, glass specimens showed flaking phenomenon while glass-ceramic specimens showed a slight corrosion evidence without any cracks.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.16-22
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• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Applied Science and Technology
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• v.31 no.2
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• pp.218-224
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• 2014

Biodegradable conductive composite films of polylactic acid(PLA) were prepared with various amounts of polyaniline(PAni) doped with dodecylbenzenesulphonic acid (DBSA) by solution blending technique to identify their mechanical and electric properties. 15 mol% of DBSA doped PAni was easily obtained by polymerizing of aniline in the presence of APS and DBSA in THF at $0^{\circ}C$. FE SEM characterization showed that PAni were well spread on the PLA domains. The tensile strength of composite film with 15 wt% of PAni was significantly decreased from $565.3kg_f/cm^2$ for PLA film itself to $309.7kg_f/cm^2$. Elongations of all PAni/PLA composite films were also decreased up to 3-6%. Electrical conductivity of $2.9{\times}10^{-3}$ S/cm could be achieved for the composite film containing 15 wt% of PAni-DBSA. Thermal stability of these composite films measured by thermogravimetric analysis(TGA) showed a slight decrease with the amount of PAni in PAni/PLA composite films at temperature lower than $300^{\circ}C$. However, the final weight of char was strongly depended with the amount of PAni in original composite films. Conclusively, PAni/PLA composite films containing more than a 15 wt% of PAni could be used for intercepting electromagnetic and preventing electrostatic applications.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.831-836
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• 1998

The B1914 Ni-base superalloy was manufactured according to crystal structures of poly-, directionally solidified- and single crystals. We observe deformation as type of different crystal structure from room to high temperature. Specimens are controled by cooling rate and thermal gradient and then heat treatment in vacuum and then cooling with Ar gas. Different crystal structure has different stress-strain characteristic. At $600^{\circ}C$, yield strength and ultimate strength is increased single-, directionally solidified- and poly crystals in order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.