• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.187-189
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• 1997

Thermal and electrical breakdown phenomena in XLPE insulator of power cable were investigated. At high temperature the polymeric insulator was thermally deteriorated. Under the magnified high electric field, electrical tree was initiated at the sharp tip of needle electrode which was inserted to simulate the defects and impurities such as void, crack, metallic particles, dusts, and so on.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.174-180
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• 2010

Conductive and radiative thermal model configurations of an imager of a geostationary satellite are presented. A two-plane method is introduced for three dimensional conductive coupling which is not able to be treated by thin shell plate thermal modeling technique. Especially the two-plane method is applied to massive matters and PIP(Payload Interface Plate) in the imager model. Some massive matters in the thermal model are modified by adequate correction factors or equivalent thickness in order to obtain the numerical results of thermal modeling to be consistent with the analytic model. More detailed nodal breakdown is specially employed to the object which has the rapid temperature gradient expected by a rule of thumb. This detailed thermal model of the imager is supposed to be used for detailed analyses and test predictions, and be correlated with the thermal vacuum test results before final in-flight predictions.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.246-248
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• 1994

The Electrical properties of thin $SiO_2$ film by rapid thermal processing have been investigated and this film has been compared with thermal $SiO_2$ film by furnace. The RTO(rapid thermal oxide) film annealed in Ar ambient represent more superior properties than thermal $SiO_2$ film by furnace at breakdown field and leakage current. The RTO(rapid thermal oxide) film annealed in $NH_3$ ambient represent more inferior properties than thermal $SiO_2$ film by furnace at electrical properties, but the capacitance was improved 15-25% than the conventional oxide film.

• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.690-698
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• 2016

In this paper, a study is carried out to investigate the dielectric, physical and chemical properties of Palm Oil (PO) and Coconut Oil (CO) under open thermal ageing condition. The type of PO used in this study is Refined Bleached and Deodorized Palm Oil (RBDPO) Olein. The ageing experiment was carried out at 85 ℃ and 115 ℃ for 1, 3, 5, 7 and 14 days. Several parameters were measured such as AC breakdown voltage, dielectric dissipation factor, relative permittivity, resistivity, viscosity, moisture and acidity throughout the ageing duration. Based on the study, it is found that there are no significant changes on the AC breakdown voltages and relative permittivities for both RBDPO and CO. At ageing temperature of 115℃, there are clear reduction trends of dielectric dissipation factor for CO and resistivities for most of RBDPO. On the other hand, no clear trends are observed for viscosities, moisture and acidities of RBDPO and CO throughout the ageing duration.

• Journal of Bio-Environment Control
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• v.30 no.4
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• pp.401-409
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• 2021

This study aimed to estimate the photosynthetic capacity of tomato plants grown in a semi-closed greenhouse using temperature response models of plant photosynthesis by calculating the ribulose 1,5-bisphosphate carboxylase/oxygenase maximum carboxylation rate (V_cmax), maximum electron transport rate (J_max), thermal breakdown (high-temperature inhibition), and leaf respiration to predict the optimal conditions of the CO₂-controlled greenhouse, for maximizing the photosynthetic rate. Gas exchange measurements for the A-C_i curve response to CO₂ level with different light intensities {PAR (Photosynthetically Active Radiation) 200µmol·m^-2·s^-1 to 1500µmol·m^-2·s^-1} and leaf temperatures (20℃ to 35℃) were conducted with a portable infrared gas analyzer system. Arrhenius function, net CO₂ assimilation (A_n), thermal breakdown, and daylight leaf respiration (R_d) were also calculated using the modeling equation. Estimated J_max, A_n, Arrhenius function value, and thermal breakdown decreased in response to increased leaf temperature (> 30℃), and the optimum leaf temperature for the estimated J_max was 30℃. The CO₂ saturation point of the fifth leaf from the apical region was reached at 600ppm for 200 and 400µmol·m^-2·s^-1 of PAR, at 800ppm for 600 and 800µmol·m^-2·s^-1 of PAR, at 1000ppm for 1000µmol of PAR, and at 1500ppm for 1200 and 1500µmol·m^-2·s^-1 of PAR levels. The results suggest that the optimal conditions of CO₂ concentration can be determined, using the photosynthetic model equation, to improve the photosynthetic rates of fruit vegetables grown in greenhouses.

• International Journal of Safety
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• v.8 no.1
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• pp.14-17
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• 2009

The $Co^{60}$ $\gamma$-ray irradiation effects on the electrical and thermal characteristics of low density polyethylene crosslinked by Dicumyl peroxide (DCP) were investigated. We experimented on electrical properties as following; electrical tree inception and growing type for applying AC step voltage, AC breakdown strength, volume resistivity with increasing dosage. Also, chemical analyses were performed TGA, gel fraction. These electrical properties changed depending upon its crosslinking degree and byproducts from crosslinking reactions. Crosslinking reactions were considered causing by $\gamma$-ray irradiation and DCP had contained in low density polyethylene.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.650-653
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• 1997

In large generators in power plants, stator winding insulations is exposed to a combination of thermal, electrical, mechanical, environmental stresses in service. These combined stresses cause insulation aging which leads to final insulation breakdown. In order to identify the breakdown mechanism, the stator winding insulation materials which are composed of mica-epoxy is analyzed by the component of materials with EDS, SEM techniques. We concluded that the potassium ions of mica are replaced by hydrogen ions at boundary area of mica-epoxy and/or mica-mica. It is proposed that through these phenomena, the conductive layers of potassium ions enable high voltage fields of multiple stresses to create voids and microcracks.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.