• 한국태양에너지학회 논문집
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• 제22권3호
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• pp.31-37
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• 2002

This experimental study represents the results of an analysis on the characteristics of flux density distributions in the focal region of solar concentrator. The characteristics of flux density distributions are investigated to optimally design and position a cavity receiver. This deemed very useful to find and correct various errors associated with a dish concentrator. We estimated the flux density distribution on the target placed along with focal lengths from the dish vertex to experimentally determine the focal length. It is observed that the actual focal point exists when the focal length is 2.17 m. We also evaluated the position of flux centroid, and it was found that there were errors within 2 cm from the target center. The total integrated power of 2467 W was measured under focal flux distributions, which corresponds to the intercept rate of 85.8%. As a result of the percent power within radius, approximately 90% of the incident radiation is intercepted by about 0.06 m radius.

• 한국재료학회지
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• 제14권5호
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• pp.310-314
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• 2004

Mechanical alloying (MA) of Ti-50.0～66.7at%Si powders was carried out in a high-energy ball mill, and in situ thermal analysis was also made during MA. In order to classify the synthesis behavior of the powders with respect to at%Si, the synthesis behavior during MA was investigated by in situ thermal analysis and X-ray diffraction (XRD). In situ thermal analysis curves and XRD patterns of Ti-50.0～59.6at%Si powders showed that there were exothermic peaks during MA, indicating TiSi, $TiS_2$, and $Ti_{5}$ $Si_4$ phase formation by a rapid exothermic reaction of self-propagating high-temperature synthesis (SHS). Those of Ti-59.8～66.7 at%Si powders, however, showed that there were no peaks during MA, indicating any Ti silicide was not synthesised until MA 240 min. For Ti-50.0～59.6at%Si powders, the critical milling times for SHS increased from 34.5 min to 89.5 min and the temperature rise, $\Delta$T (=peak temperature-onset temperature) decreased form $26.2^{\circ}C$ to $17.1^{\circ}C$ as at%Si increased. The critical composition of Si for SHS reaction was found to be 59.6at% and the critical value of the negative heat of formation of Ti-59.6at%Si to be -1.48 kJ/g.

• 한국군사과학기술학회지
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• 제13권6호
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• pp.1127-1132
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• 2010

Borosilicate glass was prepared in the composition of 81% $SiO_2$, 4% $Na_2O$, 2% $Al_2O_3$, 13% $B_2O_3$. The albite phase($NaAlSi_3O_8$) increased with the $ZrO_2$(0~10wt.%) addition. For measurement of glass transition temperature($T_g$), crystallization temperature($T_{c,max}$) measured by differential thermal analysis. The $T_g$ and $T_{c,max}$ were $510{\sim}530^{\circ}C$ $650{\sim}670^{\circ}C$, respectively. The crystallized glass was heated at various conditions(temperature, time). After nucleation at $550^{\circ}C$ for 2hours prior to crystal growth at $650^{\circ}C$ for 4hours, the resulting Vickers hardness, fracture toughness and bending strength were about $736H_v$, $1.0779MPa{\cdot}m^{1/2}$, and 493MPa, which were 17%, 45% and 149% higher than parent borosilicate glass, respectively. Crystal size and transmittance of crystallized borosilicate glass were analyzed by FE-SEM, EDX and UV-VIS-NIR spectrophotometer. Transmittance of crystallized borosilicate glass was decreased with increasing $ZrO_2$(wt%) at visible-range. The results prove that light-weight bulletproof can be fabricated by the crystallization of borosilicate glass.

• 한국광학회지
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• 제35권3호
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• pp.115-120
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• 2024

자기광학(magneto-optical, MO) 효과가 우수한 광학소재는 자기장센서, 광전류센서, 광 고립기(optical isolator), 그리고 광서큘레이터와 같은 다양한 응용 분야에서 활용될 수 있어 많은 관심을 받고 있다. 본 연구에서는 일반적인 유리용융법을 사용하여 Dy³⁺ 이온이 고농도로 함유된 알루미노보로실리케이트(alumino-borosilicate, ABS) 광학유리를 제조하고, Dy³⁺ 이온 농도에 따른 ABS-Dy 유리의 열 특성, 광 특성 및 자기광학 특성을 분석하였으며 1550 nm 파장 대역에서 유리의 MO 특성을 패러데이 회전각 측정을 통하여 분석하였다. 패러데이 회전각은 유리의 Dy³⁺ 이온 농도가 증가함에 따라 선형적으로 증가하는 것으로 나타났으며, 특히 Dy₂O₃ 함량이 30 mol%인 유리는 -6.86 rad/(T·m) 가량의 높은 베르데 상수를 갖는 것으로 확인되었다. 또한 제조된 ABS-Dy 유리는 128 ℃ 이상의 우수한 열안정성(∆T= T_x-T_g)과 파장 대역이 각각 490-710, 1390-1560, 1800-2400 nm일 때 70% 이상의 높은 광투과특성을 보여주었다. 이상의 높은 베르데 상수와 우수한 열안정성은 본 연구에서 제안한 ABS-Dy 유리가 1550 nm MO 소자용 광학소재로 사용 가능함을 시사한다.

• 한국재료학회지
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• 제14권11호
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• 한국재료학회지
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• 제18권6호
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• pp.318-325
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T＋489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• Bulletin of the Korean Chemical Society
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• 제33권11호
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• pp.3706-3710
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• 2012

A novel silicon-containing arylacetylene resin (MSAR) modified by dipropargyl ether of bisphenol A (DPBPA) and dipropargyl ether of perfluorobisphenol A (DPPFBPA) was prepared separately. The curing behaviors of modified resins, DPBPA/MSAR and DPPFBPA/MSAR, were characterized with differential scanning calorimeter (DSC). The kinetic parameters of modified resins were obtained by the Kissinger and Ozawa methods. The results of dynamic mechanical analysis (DMA) revealed that the glass transition temperature ($T_g$) of the cured DPBPA/MSAR reached $486^{\circ}C$. According to the thermogravimetric analysis (TGA), the decomposition temperature ($T_{d5}$) of the cured resins and char yield ($Y_c$, $800^{\circ}C$) decreased as the dipropargyl ether loadings increased, especially in air. With the same weight loading, thermal stability of DPBPA/MSAR was better than that of DPPFBPA/MSAR. The carbon fiber (T300) reinforced composites exhibited excellent flexural properties at room temperature with a high property retention at $300^{\circ}C$.

• 센서학회지
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• 제17권6호
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.79-80
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• 2007

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.11-12
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• 2008

Micron-sized Co-alloy T800 powder was coated on Inconel718 (IN718) using high velocity oxygen fuel (HVOF) thermal spraying by the optimal coating process (OCP) determined from the best surface hardness of 16 coatings prepared by Taguchi program. The surface hardness improved 140-160 % from 399 Hv of IN718 to 560-630 Hv by the coating. Porosity of the coating was 1.0-2.7 %, strongly depending on spray parameters. Both friction coefficients (FC) and wear traces (WT) of the coating were smaller than those of IN718 substrate at both $25^{\circ}C$ and $538^{\circ}C$. FC and WT of IN718 and coating decreased with increasing the surface temperature. Tensile bond strength (TBS) and fracture location (FL) of Ti64/T800 were 8,770 psi and near middle of T800 coating respectively. TBS and FL of Ti64/NiCr/T800 were 8,740 psi and near middle of T800 coating respectively. This showed that cohesion of T800 coating was 8,740-8,770 psi, and adhesion of T800 on Ti64 and NiCr was stronger than the cohesion of T800.