• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.199.1-199.1
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• 2014

In nonlinear optics, the properties of nonlinear optical responses such as polarization and nonlinear analysis of the nonlinear surfaces were investigated using the jellium model by optical second harmonic generation. The nonlinear response of the Al metal surfaces were calculated using TDLDA. Band structure, lattice constant and bulk modulus of the Al metal were investigated. Effective potential and electron density were compared by changing different.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.91-94
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• 1990

The behavior of charged particle in dielectrics have a many effects on characteristics of the insulating materials. In this paper, numerical analysis method by hopping model was investigated application of TSC. As the results, there was a difference between characteristics of TSC by dipole polarization. Physical constant of movable ion corresponding to the experimental results was evaluated and also. Numerical calculations of unsaturated TSC and I-V characteristics were carried out by was of hopping model.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.103-111
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• 2002

The thermally insulated underground pipelines have been used for district heating system. The sensor wire embedded in the insulation was used for monitoring the insulating resistance between the sensor wire and the pipe. The resistance measurement system detects corrosion of steel pipe under insulation. The corrosion and stress corrosion cracking(SCC) characteristics of sensor wire in synthetic ground water were investigated using the electrochemical methods and constant load SCC tests. The polarization tests were used to study the electrochemical behavior of sensor wire. The sensor wire was passivated at temperatures ranging from 25 to $95^{\circ}C$. However, the applied sensing current larger than passive current resulted in breakdown of passive film. The constant load SCC tests were performed to investigate the effects of applied current and load on the fracture behavior. Stress-corrosion cracks initiated at pits that were produced by sensing current. The growth of the pit involves a tunnelling mechanism, which leads to ductile fracture.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.464-470
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• 2010

A new method for the poling of piezoelectric ceramics with an air insulation medium in stead of silicon oil is described. A similar variation of electromechanical coupling coefficient $K_t$, for an air medium is observed in comparison to that of the material poled by the conventional poling method using a silicon oil medium. Different poling parameters such as dielectric constant $\varepsilon^T$ and frequency deviation ${\Delta}f$ are studied as well as the influence on the aging effect. The required poling factors to achieve the optimal piezoelectric characteristics are electric field, 2 kV/mm, temperature $100^{\circ}C$, and poling time 30 Min. From this result electric field 3 kV/mm atmosphere airs there being will be able to use with the polarization insulation medium about the piezoelectric material, confirmed.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.217-218
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.198-198
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• 2010

The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.86-86
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• 2009

The $(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramics were produced by the conventional solid-state sintering method, and their microstructure and electrical properties were investigated. All $(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramic show dense and homogeneous structure without the presence of the rosette structure. The dielectric constant, loss and remanent polarization of $(Na_{0.5}K_{0.5})NbO_3-SrTiO_3$ ceramics were superior to those of single composition $(Na_{0.5}K_{0.5})NbO_3$

• Journal of Integrative Natural Science
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• v.5 no.3
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• pp.163-167
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• 2012

UV spectrophotometer was used to detect protein-DNA complex from DNA melting profile under constant temperature increase. Melting temperature (Tm) was $43^{\circ}C$ in copA duplex DNA alone. In the presence of Proteus mirabilis transcription regulator protein (PMTR) protein at 0.2 and 0.4 ${\mu}M$, Tm's were $45{\pm}0.5$ and $47.6{\pm}0.6^{\circ}C$, respectively. According to fluorescence polarization and gel shift assay. PMTR:copA complex was detected by the retarded migration on gel and the dissociation constant ($K_d$) was $(9.2{\pm}2.8){\times}10^{-9}M$.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.162-166
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• 1990

Photoinduced anisotropy (PIA) in amorphous As2S3 (a-As2S3 ) thin film, deposited by vacuum evaporation, is investigated. PIA is induced by linearly polarized Ar+ laser beam (λ=514.5nm) and probed by weak Ar+ laser (λ=514.5nm) and He-Ne laser (λ=632.8nm) beam through the crossed analyzer. Keeping pump beam intensity constantly, rotation of pump beam polarization direction induces reorientation phenomina of anisotropic axis. Introducing directional factor into simplified 3-level system, which is used to analyze photodarkening phenomina, an analytical expression of PIA is derived. Temporal behavior of PIAand its reorientation phenomina are investigated andcompared with theory. In the experiment pump beam intensity is 100mW/$\textrm{cm}^2$ and thickness of a-As2S3 thin film is 3${\mu}{\textrm}{m}$. In those condition, time constant of photoinduced anisotropy obtained by method of least square curve fitting is 4.0$\times$10-2sec-1. The time constant of PIA we obtained is larger than that of photodarkening, 2.8$\times$10-2sec-1.