• Journal of the Korean Applied Science and Technology
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• v.25 no.2
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• pp.175-195
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• 2008

Recent years have brought remarkable developments in white light emitting devices (WLEDs) and white organic light-emitting devices (WOLEDs). However, their efficiency, CIE values, CRI and lifetime are still not ideal. This review covers detailed discussion about syntheses of organometallic complexes, inorganic phosphors and quantum dots used in WLEDs, WOLEDs and their electroluminescent properties until December 2007.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.106-106
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• 2012

Strategies to facilitate carrier transfer/transport while preserving confined characteristics of isolated nanocrystal quantum dots (NQDs) will be discussed. Specifically, synthesis and characterizations of 1) the fabrication of neat NQD solids (assembled NQD films) with modified surfaces by attaching ligands or by applying physical processes such as heat annealing [J. Phys. Chem. C (2011), 115(3), 607] and 2) coupling NQDs to one-dimensional nanostructures such as single-walled carbon nanotubes (SWNTs) [ACS Nano, (2010) 4(1), 324] will be presented. Further, recent achievement ours of fabricating NQDs assemblies into photovoltaic devices for elucidating transfer mechanism witll be discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.59.2-59.2
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• 2007

• Journal of the Korean Ceramic Society
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• v.55 no.1
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• pp.55-60
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• 2018

In this study, quantum dots composed of $Mn^{2+}$ doped ZnS core and ZnS shell were synthesized using MPA precursor at room temperature. The ZnS: Mn/ZnS quantum dots were prepared by varying the content of MPA in the synthesis of ZnS shells. XRD, Photo-Luminescence (PL), XPS and TEM were used to characterize the properties of the ZnS: Mn/ZnS quantum dots. As a result of PL measurement using UV excitation light at 365 nm, the PL intensity was found to greatly increase when MPA was added at 15 ml, compared to the case with no MPA; the PL peaks shifted from 603 nm to 598 nm. A UV sensor was fabricated by using a sputtering process to form a Pt pattern and placing a QD on the Pt pattern. To verify the characteristics of the sensor, we measured the electrical properties via irradiation with UV, Red, Green, and Blue light. As a result, there were no reactions for the R, G, and B light, but an energy of 3.39 eV was produced with UV light irradiation. For the sensor using ZnS: Mn/ZnS quantum dots, the maximum current (A) value decreased from $4.00{\times}10^{-11}$ A to $2.62{\times}10^{-12}$ A with increasing of the MPA content. As the MPA content increases, the PL intensity improves but the electrical current value dropped because of the electron confinement effect of the core-shell.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of Construction Engineering and Project Management
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• v.9 no.4
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• pp.1-15
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• 2019

Since its adoption by the transportation sector in the early 1990s, partnering has been broadly used with the traditional delivery method by many agencies with significant reported benefits. During the same era, a number of transportation agencies (DOTs) started experimenting with a wide variety of alternative project delivery methods (APDMs) aimed at improving the delivery of highway construction projects. The effect of collaborative working strategies such as partnering, together with the APDMs have become somehow interrelated posing a potential challenge on how to effectively integrate partnering as a concept in the APDMs. The salient question has been if the collaborative nature of these APDMs has affected how partnering is being used by state DOTs. Through an extensive literature review, analysis of 32 CMGC RFPs/RFQs and review of three CMGC case studies, the study found that there is limited information in state DOT documents that show procedures on the usage of partnering with CMGC projects. Majority of DOTs are relying on the inherent nature of the CMGC contract to promote healthy collaborative practices and there is the need to consider partnering during preconstruction and construction separately to cater for any personnel change over. The study also revealed that partnering may become less important at the construction phase due to overlap between partnering and CMGC practices. In support of this finding, a CMGC partnering model was developed that can be adopted by DOTs. This paper contributes to both research and practice by expanding the existing knowledge on partnering on APDMs.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.25-28
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• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.40 no.1
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• pp.1-9
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• 2003

In this paper, we propose a new method dispersing spatially C(Cyan), M(Magenta), Y(Yellow) instead of K(black) in the bright region. The overlapping of black dots decreases brightness in the dark region, and black dots are very sensitive to human visual system in the bright region. Therefore, to avoid this problem, bright and dark gray region in the color image is considered in the proposed approach. A new method which uses CMY simultaneously in single mask is proposed, and CMY dots are used dispersing spatially for the bright region instead of black dot by this method. And tone curve connection is used to consider the gray level of dark region. In previous method, BNM (Blue Noise Mask) has high granularity and a narrow dynamic range. But the proposed method has the low granularity, wide dynamic range, and high contrast properties. Because the proposed method uses three times dots spatially in the different position than a conventional BNM, it can express more spatial information and a similar gray level compared with BNM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.18-23
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• 2022

Electrohydrodynamic jet (e-jet) printing, a type of direct contactless microfabrication technology, is a versatile fabrication process that enables a wide range of micro/nanopattern arrays by applying a strong electric field between the nozzle and the substrate. In general, the morphology and the thickness of polymers/quantum dot micropatterns show a systematic dependence on the diameter of the nozzle and the ink composition with a fully automated printing machine. The purpose of this report is to provide typical examples of e-jet printed micropatterns of polymers/quantum dots to explain the effect of each process variable on the result of experiments. Here, we demonstrate several operating conditions that allow high-resolution printing of layers of polymers/quantum dots with a precise control over thickness and submicron lateral resolution.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).