• 제목/요약/키워드: tetrafluoromethane ($CF_4$)

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산소부화된 메탄 예혼합 화염에서 CF4 분해에 대한 연구 (The Investigation of CF4 Decomposition in Methane Premixed Flames on Oxygen Enrichment)

  • 이기용
    • 한국연소학회지
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    • 제22권4호
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    • pp.51-56
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    • 2017
  • The decomposition of tetrafluoromethane has been investigated with the reaction mechanism proposed for freely propagating $CH_4/CF_4/O_2/N_2$ premixed flames on the oxygen enrichment. The factors affecting on the removal efficiency of tetrafluoromethane were analyzed. The increase in flame temperature due to oxygen enrichment has a great influence on the removal efficiency of tetrafluoromethane. At the same oxygen enrichment condition, the removal efficiency in the rich flame is higher than one in the lean flame. The increase of the F/H ratio leads to decrease the flame temperature and the removal efficiency of tetrafluoromethan is decreased at the flame temperature of 2600 K or lower, The elementary reactions that dominate the consumption of tetrafluoromethane are (R1) $CF_4+M=CF_3+F+M$ and (R2) $CF_4+H=CF_3+HF$. (R1) has the greatest effect on the consumption of tetrafluoromethane under the oxygen enhanced flames.

워터젯 플라즈마 스크러버 사불화탄소 분해 특성 (Decomposition Characteristics of Tetrafluoromethane Using a Waterjet Plasma Scrubber)

  • 임문섭;전영남
    • 한국기후변화학회지
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    • 제8권1호
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    • pp.63-71
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    • 2017
  • It is recognized that tetrafluoromethane ($CF_4$) has a great influence on global warming. The $CF_4$ is known to have a large impact on climate change due to its large global warming index. In this study, a waterjet plasma scrubber (WPS) was designed and manufactured for the $CF_4$ decomposition. The WPS is a novel technology which is combined a gliding arc plasma and water injection at the center of the plasma discharge. This can give an innovative way for $CF_4$ decomposition by achieving larger plasma columnand generating OH radicals. A performance analysis was achieved for the design factors such as waterjet flow rate, total gas flow rate, consumption electric power, and electrode gap. The highest $CF_4$ decomposition and energy efficiencies were 64.8% and 6.43 g/kWh, respectively; Optimal operating conditions were 20 mL/min of waterjet flow rate, 200 L/min total gas flow rate, 5.3 kW consumption electric power, and 4.4 mm electrode gap. As for the 2 stage reactor of the WPS, the $CF_4$ decomposition efficiency improved as the 85.3% while the energy efficiency decreased as the 5.57 g/kWh.

워터젯 글라이딩 아크 플라즈마를 이용한 사불화탄소 저감 (Reduction of Tetrafluoromethane using a Waterjet Gliding Arc Plasma)

  • 이채홍;전영남
    • Korean Chemical Engineering Research
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    • 제49권4호
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    • pp.485-490
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    • 2011
  • 사불화탄소($CF_4$)는 반도체 제조공정에서 에칭과 반응기 세척에서 사용되어온 가스이다. $CF_4$는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 본 연구에서는 플라즈마와 워터젯을 결합하여 워터젯 글라이딩 아크 플라즈마 시스템을 개발하고, 이를 이용하여 $CF_4$를 고효율로 분해할 수 있도록 방전영역을 증가시키고 다량의 OH 라디칼을 생성시킬 수 있는 최적의 조업 조건을 결정하였다. 공정 실험 변수로는 워터젯 주입량, $CF_4$ 초기 농도, 전체 가스량과 주입에너지량(SEI : Specific energy input)을 선정하였다. 변수실험을 통하여 워터젯 주입량이 25.5 mL/min, $CF_4$ 초기 농도 2.2%, 전체 가스량 9.2 L/min, SEI 7.2 kJ/L일 때 $CF_4$ 분해율은 최고 97%까지 도달하였다.

워터젯 글라이딩 아크 플라즈마에 의한 사불화탄소 제거에 미치는 운전변수의 영향 (Effects of Operating Parameters on Tetrafluoromethane Destruction by a Waterjet Gliding Arc Plasma)

  • 이채홍;전영남
    • 공업화학
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    • 제22권1호
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    • pp.31-36
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    • 2011
  • 사불화탄소($CF_4$)는 반도체 제조공정에서 플라즈마 에칭과 화학기상증착(CVD)에서 사용되어온 가스이다. $CF_4$는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 본 연구에서는 플라즈마와 워터젯을 결합하여 방전영역을 증가시키고 다량의 OH 라디칼을 생성시켜 $CF_4$를 고효율로 분해할 수 있는 워터젯 글라이딩 아크 플라즈마 시스템을 개발하였다. 실험 변수로 전극 형태, 전극 각도, 가스 노즐직경, 전극 간격과 전극 길이를 취하였다. 변수실험을 통하여 Arc 형태의 전극에서 전극 각도가 $20^{\circ}$, 가스 노즐 직경이 3 mm, 전극 간격이 3 mm, 전극 길이가 120 mm일 때 $CF_4$ 분해율은 최고 93.4%까지 도달하였다.

DBD 반응기에서 플라즈마 방전형태에 따른 PFCs 가스의 분해 특성 (Decomposition Characteristics of PFCs for Various Plasma Discharge Methods in Dielectric Barrier Discharge)

  • 김관태;김용호;차민석;송영훈;김석준;류정인
    • 한국대기환경학회지
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    • 제20권5호
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    • pp.625-632
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    • 2004
  • Perfluorocompounds ($PFC_s$), such as tetrafluoromethane ($CF_4$) and hexafluoroethane ($C_2F_6$), have been widely used as plasma etching and chemical vapor deposition (CVD) gases for semiconductor manufacturing processes. Since these $PFC_s$ are known to cause a greenhouse effect intensively, there has been a growing interest in reducing $PFC_s$ emissions. Among various $CF_4$ decomposing techniques, a dielectric barrier discharge (DBD) is considered as one of a promising candidate because it has been successfully used for generating ozone ($O_3$) and decomposing nitrogen oxide (NO). Firstly, optimal concentration of oxygen for $CF_4$ decomposition was found to figure out how many primary and secondary reactions are associated with DBD process. Secondary, to find effective discharge method for $CF_4$ decomposition, a streamer and a glow mode in DBD are experimentally compared, which includes (i) coaxialcylinder DBD, (ii) DBD reactor packed with glass beads. and (iii) a glow mode operation with a helium gas. The test results showed that optimal concentration of oxygen was ranged 500 ppm~1% for treating 500 ppm of $CF_4$ and helium glow discharge was the most efficient one to decompose $CF_4$.

전해응집법에 의한 불화수소 함유 워터젯 플라즈마 폐수처리 (Removal of Hydrogen Fluoride from Waterjet Plasma Wastewater by Electrocoagulation)

  • 이채홍;전영남
    • 대한환경공학회지
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    • 제34권10호
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    • pp.702-708
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    • 2012
  • 사불화탄소($CF_4$)는 반도체 제조공정에서 에칭과 화학기상증착(CVD)에서 사용되어온 가스이다. $CF_4$는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 또한 불화수소를 포함한 폐수는 지하수 오염의 원인이 된다. 과도한 불소를 포함한 물을 장기간 섭취는 치아와 뼈에 문제를 야기한다. 워터젯 플라즈마를 이용하여 $CF_4$를 분해 후 생성되는 부산물 중 HF에 의하여 폐수가 생성된다. 이 폐수를 알루미늄 전극을 사용한 전해응집을 이용하여 폐수 중 HF를 제거 할 수 있는 시스템을 개발하였다. 실험 변수로는 초기 pH 변화, 반응 시간 변화, 주입유량 변화, 전류 밀도 변화를 실험하였다. 변수 실험을 통하여 초기 pH는 3.5, 반응 시간은 10 min, 주입 유량은 10 mL/min, 전류 밀도는 $159A/m^2$일 때 HF 제거율은 최고 85%까지 도달하였다.

SiC-Al2O3 촉매를 이용한 CF4의 마이크로파 열분해 (Microwave Thermal Decomposition of CF4 using SiC-Al2O3)

  • 최성우
    • 한국환경과학회지
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    • 제22권9호
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    • pp.1097-1103
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    • 2013
  • Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

신장 아크 반응기를 이용한 CF4 처리특성 (CF4 Treatment Characteristics using an Elongated Arc Reactor)

  • 김관태;이대훈;이재옥;차민석;송영훈
    • 한국대기환경학회지
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    • 제26권1호
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    • pp.85-93
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    • 2010
  • $CF_4$ removal characteristics were investigated using an elongated arc reactor. The advantage of the elongated arc reactor includes direct use of treated gas as plasma operating gas and the enhancement of the removal reaction by using a thermo-chemistry and a plasma induced chemistry at the same time. Geometrical configurations, such as the length of the reactor and the shape of a throat, were tested to get an optimized removal efficiency with low power consumption. As results, over 95% of $CF_4$ removal was obtained with 300 lpm of total flowrate for various $CF_4$ concentration (0.1~1%). Corresponding specific energy density (SED), which means required electrical energy to treat the unit volume of treated gas, is about 3.5 kJ/L, The present technique can be applied to real applications by satisfying three major concerns, those are the high flowrate of treated gas, high removal efficiency (> 95%), and low power consumption (< 10 kJ/L).

볼츠만 방정식에 의한 $CF_4$ 분자가스의 전리 및 부착계수에 관한 연구 (The study of ionization and attachment coefficients in $CF_4$ molecular gas by Boltzmann equation)

  • 송병두;하성철;전병훈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.628-631
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    • 2004
  • A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

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과불화탄소 제거를 위한 플라즈마 워터젯 스크러버 개발 (Development of a Plasma Waterjet Scrubber for the Reduction of PFCs)

  • 이채홍;전영남
    • 한국대기환경학회지
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    • 제26권6호
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    • pp.624-632
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    • 2010
  • Perfluorocarbons (PFCs) are widely used in semiconductor industry. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetimes which cause the global warming effect. To destruct $CF_4$, a waterjet gliding arc plasma was designed and manufactured. The highest $CF_4$ destruction showed at waterjet plasma case, compared to plasma discharge only or water scrubber only, respectively. In addition, it could be known that the $CF_4$ destruction should be associated with the electron and OH radicals. The operating conditions such as waterjet flow rate, initial $CF_4$ concentration, total gas flow rate, specific energy input were investigated experimentally using a plasma waterjet scrubber. Through the parametric studies, the highest $CF_4$ destruction of 94.5% was achieved at 0.2% $CF_4$, 2.1 kJ/L SEI, 20 L/min total gas flow rate and 18.5 mL/min waterjet flow rate.