• Journal of information and communication convergence engineering
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• 제7권1호
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• pp.62-65
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• 2009

In this paper, the temperature characteristics of full CMOS FLL(frequency locked loop) re analyzed. The FLL circuit is used to generate an output signal that tracks an input efference signal. The locking time of FLL is short compared to PLL(phase locked loop) circuit because the output signal of FLL is synchronized only in frequency. Also the FLL s designed to allow the circuit to be fully integrated. The FLL circuit is composed two VCs, two buffers, a VCO and two frequency dividers. The temperature variation of frequency divider, FVC and buffer cancelled because the circuit structure. is the same and he temperature effect is cancelled by the comparator. Simulation results are shown to illustrate the performance of the designed FLL circuit with temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.342-344
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• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• 전기학회논문지
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• 제56권3호
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• pp.577-582
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• 2007

The plasma display panel is an image expression display using gas discharge plasma. However, gas discharge characteristics vary with temperature as gas discharge is sensitive to temperature. The discharge time lag extends a lot in low temperature and it is known as the cause which hinders high speed addressing which is essential for the size enlargement of the panel. Accordingly this research aims at identifying the temperature-dependent discharge characteristic. The lower temperature becomes, the longer addressing discharge time lag becomes. Particularly the statistical time lag extends much in low temperature. The increasing of electric field shortens discharge time lag in low temperature. Also, when priming particles are sufficiently supplied, stable discharge can be performed regardless of the influence of temperature.

• 한국연소학회:학술대회논문집
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• 한국연소학회 1999년도 제19회 KOSCO SYMPOSIUM 논문집
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• pp.189-200
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• 1999

Combustion characteristics of a regenerative combustor for high temperature air combustion have experimentally studied. Temperature measurement on regenerative ceramic material and combustor has been carried out with changing equivalence ratio at constant turn-over period. Stable and unstable combustion region have been found and also detailed averaged temperature profile with respect to various air flow conditions have been obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.102-104
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• 1989

The characteristics of stearic acid and PDA (pentacosaDiyonicAcid) LB films were studied using the XRD spectra for regularity of layers and ellipsometer for the total thickness of multilayer films. From the experiments of varying the PH and temperature, it was found that the stability of monolayer on the water subphase was very sensitive to its PH and temperature. The optimum condition of PH for the stable stearic acid LB film was 6$\sim$6.5. The PDA LB films were stable at the lower temperature than room temperature: we obtained very uniform PDA LB films at 12$^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1456-1458
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• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.350-356
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• 2006

In this study, piezoelectric transformer was manufactured at the sintering temperature of $950^{\circ}C$, and then the feasibility of application to low temperature sintering piezoelectric transformers was investigated by evaluating the electrical characteristics of it. The voltage ratio of piezoelectric transformer showed the maximum value at the resonant frequency of input part, and increased according to the increase of load resistance. The output power and efficiency of piezoelectric transformer showed the superior properties when the output impedance of it coincides with the load resistance. Piezoelectric transformer manufactured at the low temperature of $950^{\circ}C$ showed the heat generation less than $20^{\circ}C$ at the output power of 30 W, and stable driving characteristics.

• 전자공학회논문지A
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• 제33A권12호
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• pp.39-46
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• 1996

In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.78-81
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• 2002

This paper describes on the design structure and development temperature stable strip-line junction isolator operating in above resonance mode. Temperature characteristics of isolator depend on magnet, YIG(Yttium Iron Garnet) ferrite, and conductor etc. These require temperature stability and possible methods of compensation for the temperature dependent effects. In this paper, the analysis and measurement of the temperature characteristics were carried out for the material isolator prototype. The bandwidth of isolator was expended and the center frequency shift was reduced in temperature range of -20∼8O$^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1075-1078
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• 2002

This paper describes on the design structure and development of temperature stable strip-line function isolator operating In above resonance mode. Temperature characteristics of isolator depend on magnet, YIG(Yttium Iron Garnet) ferrite, and conductor etc. These require temperature stability and possible methods of compensation for the temperature dependent effects. In this paper, the analysis and measurement of the temperature characteristics were carried out for the material isolator prototype. The bandwidth of isolator was expended and the frequency shift at center was reduced in the temperature range of -20∼80$\^{C}$.