• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.8
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• pp.1130-1133
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• 2021

In this paper, a miniaturized sensor interface circuit for the respiration detection system is proposed. Respiratory diagnosis is one of the main ways to predict various diseases. The proposed system consists of respiration detection sensor, temperature sensor, and interface circuits. Electrochemical type gas sensor using solid electrolytes is adopted for respiration detection. Proposed system performs sensing, amplification, analog-to-digital conversion, digital signal processing, and i2c communication. And also proposed system has a small form factor and low-cost characteristics through optimization and miniaturization of the circuit structure. Moreover, technique for sensor degradation compensation is introduced to obtain high accuracy. The size of proposed system is about 1.36 cm².

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.378-384
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• 2013

In this paper, a CMOS temperature sensor is proposed to measure the internal temperature of a chip. The temperature sensor consists of a proportional-to-absolute-temperature (PTAT) circuit for a temperature sensing part and a 4-bit analog-to-digital converter (ADC) for a digital interface. The PTAT circuit with the compact area is designed by using a vertical PNP architecture in the CMOS process. To reduce sensitivity of temperature variation in the digital interface circuit of the proposed temperature sensor, a 4-bit successive approximation (SA) ADC using the minimum analog circuits is used. It uses a capacitor-based digital-to-analog converter and a time-domain comparator to minimize power consumption. The proposed temperature sensor was fabricated by using a $0.25{\mu}m$ 1-poly 6-metal CMOS process with a 2.5V supply, and its operating temperature range is from 50 to $150^{\circ}C$. The area and power consumption of the fabricated temperature sensor are $130{\times}390{\mu}m^2$ and $868{\mu}W$, respectively.

• Journal of the Korean Society of Visualization
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• v.7 no.2
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• pp.17-21
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• 2010

This paper presents the fabrication and performance measurement of a temperature sensor array on a flexible substrate attachable to a curved surface using MEMS technology. Specifically, the fabrication uses the well-developed printed circuit board fabrication technology for complex electrode definition. The temperature sensor array are lifted off with a $10{\times}10$ matrix in a $50\;mm{\times}50\;mm$ to visualize temperature distribution. Copper is used as temperature sensing material to measure the change in resistances with temperature increase. In a thermal oven with temperature control, the temperature sensor array is Characterized. The constant slope of resistance change is obtained and temperature distribution is measured from the relationship between resistance and temperature.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1385-1393
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• 2014

Gas insulated switchgear (GIS) is widely used in the power systems, however, the contacts overheating of the inside circuit breaker or disconnector may be a potential cause of developing accidents. As the temperature of the contacts cannot be directly acquired due to existence of the metallic shield, an infrared sensor is adopted to directly measure the temperature of the shield and then the contacts temperature can be indirectly obtained by data fitting, based on which the on-line temperature monitoring technology specifically for GIS contacts based on infrared sensing is proposed in this paper. A real GIS test platform is constructed and experimental studies are carried out to account for the influential factors that affect the accuracy of the infrared temperature measurement. A heat transfer model of the GIS module is also developed, together with experimental studies, the nonlinear temperature relationship among the contacts, the metallic shield and the environment based on a neural network algorithm is established. Finally, an integrated on-line temperature monitoring system for the GIS contacts is developed for on-site applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.347-348
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• 2007

On-chip micro humidity sensor, using $CN_x$ films for the sensing material, was designed, simulated, and fabricated with Op amp based readout circuit and diode temperature sensors. To compensate the temperature and other gases, two methods were applied. One is wheatstone-bridge with reference FET that eliminates other undesirable chemical species, and the other is a diode temperature sensor to compensate the temperature effect. $CN_x$ film can be a new humidity sensing material, and has a strong potential to adapt to smart sensors or multi-sensors using MEMS or nano-technology. A particular design technology for integration of sensors and systems together was proposed that whole fabrication process could be achieved by a standard CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.65-71
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• 2007

We propose a pixel-level automatic calibration circuit scheme that initializes a capacitive fingerprint sensor LSI to eliminate the influence of the surface condition and environment, which is degraded by dirt during long-time use, process variation and ambient temperature. The sample chip is fabricated on $0.35{\mu}m$ standard CMOS process. The calibration is executed by optimizing the reference voltage in each pixel to make the sensor signals of all pixels the same. The calibration control circuit is composed of the sensing circuit and charge pumping circuit, and calibrates all pixels in a short time. 16-level gray scale fingerprint images can be captured to increase the accuracy of identification. This confirms that the scheme is effective for capturing consistent clear images during long-time use.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.156-157
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• 2010

This paper proposes a correction method of capacitance estimation considering the temperature effect for the DC-link capacitor banks in three-phase AC/DC PWM converters. In this work, a sensing circuit using a temperature sensor is designed for measuring the operating temperature. Capacitance value is corrected considering the measured temperature. This method has been implemented in experiment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.113-120
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• 1994

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.1-6
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• 2019

This paper presents an air flow sensor (AFS) based on a polymer thin film. This AFS primarily consists of a polymer membrane attached to a metal-patterned glass substrate and a temperature-sensing element composed of NiCr. These two components were integrated on a single glass substrate. The AFS measures changes in capacitance caused by deformation of the polymer membrane based on the air flow and simultaneously detects the temperature of the surrounding environment. A readout integrated circuit (ROIC) was also fabricated for signal processing, and an ROIC chip, 1.8 mm by 1.9 mm in size, was packaged with an AFS in the form of a system-in-package module. The total size of the AFS is 1 by 1 cm, and the diameter and thickness of the circular-shaped polymer membrane are 4 mm and $15{\mu}m$, respectively. The rate of change of the capacitance is approximately 11.2% for air flows ranging between 0 and 40 m/s.