• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• Journal of Construction Engineering and Project Management
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• 제1권1호
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• pp.18-23
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• 2011

Conservation of energy and fuel is the trend in smart building design. Radio Frequency Integrated Circuit (RFIC) technology is often used in temperature sensing and signal transmission to manage indoor temperature, but it is rarely applied to the shell of the building. Heat retention and poor insulation in building shells are the largest causes of high energy consumption by indoor air conditioning. Through combining RFIC technology with temperature sensors, this study will develop smart temperature information material that can be embedded in concrete. In addition to accurately evaluating the effectiveness of shell insulation material, the already-designed Building Physiology Information System can monitor long-term temperature changes, leading to smarter building health management.

• 국제학술발표논문집
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• The 4th International Conference on Construction Engineering and Project Management Organized by the University of New South Wales
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• pp.480-486
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• 2011

Conservation of energy and fuel is the trend in smart building design. Radio Frequency Integrated Circuit (RFIC) technology is often used in temperature sensing and signal transmission to manage indoor temperature, but it is rarely applied to the shell of the building. Heat retention and poor insulation in building shells are the largest causes of high energy consumption by indoor air conditioning. Through combining RFIC technology with temperature sensors, this study will develop smart temperature information material that can be embedded in concrete. In addition to accurately evaluating the effectiveness of shell insulation material, the already-designed Building Physiology Information System can monitor long-term temperature changes, leading to smarter building health management.

• 센서학회지
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• 제25권5호
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• pp.326-332
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• 2016

A novel CMOS temperature sensor with binary output is implemented by using fully differential switched-capacitor circuits for resistorless implementation of the temperature sensor core. Temperature sensing is based on the temperature characteristics of the pn diodes implemented by substrate pnp transistors fabricated using standard CMOS processes. The binary outputs are generated by using the charge-balance principle that eliminates the division operation of the PTAT voltage by the bandgap reference voltage. The chip was designed in a MagnaChip $0.35-{\mu}m$ CMOS process, and the designed circuit was verified using Spectre circuit simulations. The verified circuit was laid out in an area of $950{\mu}m{\times}557 {\mu}m$ and is currently under fabrication.

• 전자공학회논문지
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• 제53권2호
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• pp.109-116
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• 2016

셔터방식의 쵸퍼를 이용한 정지 및 이동인체 감지 모듈을 개발하였다. 감지 모듈은 프레넬 렌즈(Fresnel lens), 초전형적외선(pyroelectric infrared : PIR) 센서, 센서 인터페이스 회로, MCU(micro control unit) 그리고 경보 LED(light emitting diode)로 구성된다. 정지 인체 감지 원리는 PIR 센서에서 나오는 신호를 카메라 셔터를 이용하여 인체의 열을 쵸핑하여 감지하는 방식이다. MCU에서 인터럽트 함수를 제어하는 알고리즘을 통해 정지 및 이동 인체 신호를 감지하게 하였다. 개발한 감지 모듈은 기구부와 PCB(print circuit board)를 일체화함으로써 종래의 상용화되고 있는 이동인체 감지 모듈을 대체 가능하다. 실내 상온에서의 실험 결과, 감지거리는 약 7.0m, 감지각도는 $110^{\circ}$로 측정되었다. 이런 조건에서 감지률은 100%이였고 모듈의 소비 전력는 100mW이였다.

• 한국재료학회지
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• 제23권9호
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• 전자공학회논문지SC
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• 제37권2호
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• pp.60-68
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• 2000

본 논문에서는 표준 메모리 공정에 구현이 가능한 CMOS 전류원의 설계 기법에 대해 논한다. 제안하는 설계기법은 자기바이어스 기법을 활용하여 공급전압의 변화에 대해 매우 좋은 특성을 갖고, 새로운 온도보상 기법을 통해 온도변화에 대한 출력전류 변이의 일차성분을 제거할 수 있으며, 칩 내의 전압잡음에 강한 새로운 전류감지 스타트업 회로를 포함한다. 이러한 CMOS 전류원의 회로설계 기법과 함께 제안된 CMOS 전류원을 초고속 DRAM의 클록 발생회로에 적용할 수 있는 방법에 대해서도 논의한다. 본 논문에서 제안된 CMOS 전류원의 설계기법은 해석적인 방법과 함께 회로 시뮬레이션을 통해 그 유용성을 입증한다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 추계학술대회
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• pp.695-697
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• 2013

본 논문에서는 MOSFET을 사용하여 IC내부의 온도를 측정해 전압을 출력으로 나타내는 온도감지회로를 제안하였다. 제안한 온도감지회로는 CMOS공정에서 구현하기 위해 MOSFET을 이용한 두 개의 전류미러 회로를 이용하여 설계하였고, 다양한 어플리케이션에 적용 가능하도록 하였다. 온도감지회로는 온도감지모드, 절전모드 두 가지 동작을 하며 각각의 모드 시뮬레이션 결과 온도감지모드에서는 $0^{\circ}C{\sim}125^{\circ}C$까지 스윕했을 때 출력전압이 0V에서 1.2V까지 측정되었고, 절전모드에서는 출력전류가 100pA 이하로 흐르는 것을 확인 할 수 있었다.

• 한국재료학회지
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• 제24권1호
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.9-9
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• 2010

In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses $1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation.