• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.838-841
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• 2012

To avoid the damage to circuit and performance degradation by temperature changes, temperature sensing circuit applicable to the IC is proposed in this paper. Temperature sensing is executed by PTAT circuit and power saving mode is activated by internal switch if internal temperature is in high. Also, characteristics of current matching are increased by using current mirror and cascode circuits. From the simulation results, this circuit is operating in action mode if input signal is in low. But it immediately goes into power saving mode if output signal is in high. It shows the output voltage of 1V at $75^{\circ}C$ and 1.75V at $125^{\circ}C$ in action mode and near 0 V(0V~ 7uV) in power saving mode.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1495-1498
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• 2008

We proposed driving method with variable integration time for ambient light sensing. One operation period of the proposed driving method consists of several sub-integration periods with variable integration time which can enlarge dynamic range of ambient light sensing circuit. Temperature dependent characteristic of p-intrinsic-metal (p-i-m) diode can be compensated using the proposed driving method.

• Journal of information and communication convergence engineering
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• v.18 no.3
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• pp.201-206
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• 2020

This paper presents a new method for controlling the current of lighting LEDs without current sensors. This method can be used as backup against LED current sensor faults. LED lighting requires a circuit with a constant current in order to maintain the same brightness when the ambient temperature changes. Therefore, we propose a new current estimation method to provide backup in case of current sensor faults based on the calculation of the inductor current. In the fabricated circuit, the average current changes from 144.03 mA to 155.97 mA when the ambient temperature changes from 0℃ to 60℃. The application of this study can enable the fabrication of a driving IC for LEDs in the form of a single chip without sensing resistors. This is expected to reduce the complexity of the peripheral circuit and enable precise feedback control.

• Journal of the Korea institute for structural maintenance and inspection
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• v.22 no.3
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• pp.69-74
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• 2018

Fiber-Reinforced Cementitious Composites (FRCCs) have electrical conductivity by inserting reinforced conductive fibers into a cementitious matrix. Such characteristic allows us to utilize FRCCs for crack monitoring of a structure by measuring electrical responses without sensor installation. However, the electrical responses are often sensitively altered by temperature variation as well as crack initiation. The temperature variation may disturb crack detection on the measured electrical responses. Moreover, as sensing probes for measuring electrical reponses increase, undesired contact noises are often augmented. In this paper, a self-sensing impedance circuit is specially designed for reducing the number of sensing probes. The crack initiation and temperature variation effects on the self-sensing impedance responses of FRCCs are experimentally investigated using the self-sensing impedance circuit. The experiment results reveal that the electrical impedance response are more sensitively changed due to temperature variation than crack initiation.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2100-2101
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• 2008

This paper is studied on a protective control system for electrical fire and electrical faults due to over current or electric short circuit faults by using electrical thermal characteristics of PTC (Positive Temperature Coefficient) thermistor and current response characteristics of high sensitive reed switch. The PTC thermistor has characteristic of positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with BaTiO3_Ceramics of positive temperature coefficient. Also PTC thermistor shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point, and reed switch, which is used for electrical fault current sensing devices, have a excellent characteristic of response velocity in degree of ${\mu}s{\sim}ms$ that sensing magnetic flux in proportion to dimension of line current. This paper is proposed on a protective control system use PTC thermistor and reed switch for sensor which is protected from electrical fire due to overload faults or electric short circuit faults. Some experimental results of the proposed electric safety control device are confirmed to the validity of the analytical results.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.187-193
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• 2016

Fabrication of iron oxide/carbon nanotube composite structures for detection of ammonia gas at room temperature is reported. The iron oxide/carbon nanotube composite structures are fabricated by in situ co-arc-discharge method using a graphite source with varying numbers of iron wires inserted. The composite structures reveal higher response signals at room temperature than at high temperatures. As the number of iron wires inserted increased, the volume of carbon nanotubes and iron nanoparticles produced increased. The oxidation condition of the composite structures varied the carbon nanotube/iron oxide ratio in the structure and, consequently, the resistance of the structures and, finally, the ammonia gas sensing performance. The highest sensor performance was realized with $500^{\circ}C/2h$ oxidation heat-treatment condition, in which most of the carbon nanotubes were removed from the composite and iron oxide played the main role of ammonia sensing. The response signal level was 62% at room temperature. We also found that UV irradiation enhances the sensing response with reduced recovery time.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.55-60
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• 2016

This study was developed through the secondary battery module charging/discharger possible utilization in the production process equipment circuit. The developed module is ensuring construction of efficient and productive charging and discharger through this research a limit on the yield and the price of existing single -channel charge and discharger circuit as a 5V 70A grade secondary battery Formation charge and discharger for up to 1 board 4 channels. In order to improve the sensing accuracy, through a robust differential amplifier circuit described using 16bit Analog-Digital Converter and noise was secured 16bit resolution sensing. The configuration also made demands for property Rise / Fall Time. Data Acquisition, discharge efficiency and also to fit the sink circuit temperature level for mass production.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.2
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• pp.220-220
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• 1999

This paper describes the high efficiency inverter ballast circuit using very cheap microprocessor, which has been developed by the author. A variety of soft-switching techniques have been proposed to reduce the switching losses and EMI problems that occur with higher switching frequencies in switched inverter ballast. The inverter ballast circuit, which employs a temperature sensing circuits has been also proposed to improve starting performance of the fluorescent lamps. That is, the inverter ballast circuit, which employs a soft-starting circuit and soft-switching techniques to implement the power factor correction and to mitigate of power-loss and increase a life time of the fluorescent lamps, has become an attractive performance for ballasting the fluorescent lamps. In this paper, the operation and the control of the inverter ballast are described in detail and experimental results are presented. As the experimental results, when environment temperature is at -40℃, the inverter ballast circuit has low THD(4.8%) of the input current and large power factor(98%) of the lamp current. The proposed improved ballast circuit appears to be a good performance for ballasting fluorescent lamps.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.1-10
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• 2007

In recent few years, low-power electronics has been a leading drive for technology developments nourished by rapidly growing market share. Mobile DRAM, as a fundamental block of hand-held devices, is now becoming a product developed by limitless competition. To support application specific mobile features, various new power-reduction schemes have been proposed and adopted by standardization. Tightened power budget in battery-operated systems makes conventional schemes not acceptable and increases difficulty of the circuit design. The mobile DRAM has successfully moved down to 1.5V era, and now it is about to move to 1.2V. Further voltage scaling, however, presents critical problems which must be overcome. This paper reviews critical issues in mobile DRAM design and various circuit schemes to solve the problems. Focused on analog circuits, bitline sensing, IO line sensing, refresh-related schemes, DC bias generation, and schemes for higher data rate are covered.