• 제목/요약/키워드: temperature sensing circuit

검색결과 60건 처리시간 0.029초

IC내부 온도 측정이 가능한 온도센서회로 설계 (Design of temperature sensing circuit measuring the temperature inside of IC)

  • 강병준;김한슬;이민우;손상희;정원섭
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.838-841
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    • 2012
  • 본 논문에서는 온도변화에 따른 회로 손상이나 성능 저하를 피하기 위해서 회로 안에 내장할 수 있는 온도 센서 회로를 설계하였다. 일반적인 PTAT회로를 사용하여 온도감지를 하고, 스위치를 내장시켜 회로 동작이 불가능할 정도로 IC 내부 온도가 높을 때는 절전모드로 동작하게 하였다. 또한, 전류미러 및 캐스코드회로를 사용함으로서 전류 정합특성을 향상시켰다. 시뮬레이션 결과 $75^{\circ}C$일 경우 약 1V, $130^{\circ}C$일 경우 1.75V를 출력전압을 발생하였으며, 절전모드의 경우 0V~7uV까지 즉 거의 0V에 가까운 출력전압을 발생함을 확인 할 수 있었다.

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Driving Method with Variable Integration Time for Ambient Light Sensing Circuit

  • Lim, Han-Sin;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1495-1498
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    • 2008
  • We proposed driving method with variable integration time for ambient light sensing. One operation period of the proposed driving method consists of several sub-integration periods with variable integration time which can enlarge dynamic range of ambient light sensing circuit. Temperature dependent characteristic of p-intrinsic-metal (p-i-m) diode can be compensated using the proposed driving method.

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Maximum Current Estimation Method for the Backup of Current Sensor Faults

  • Kim, Jae-Yeon;Park, Si-Hyun;Suh, Young-Suk
    • Journal of information and communication convergence engineering
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    • 제18권3호
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    • pp.201-206
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    • 2020
  • This paper presents a new method for controlling the current of lighting LEDs without current sensors. This method can be used as backup against LED current sensor faults. LED lighting requires a circuit with a constant current in order to maintain the same brightness when the ambient temperature changes. Therefore, we propose a new current estimation method to provide backup in case of current sensor faults based on the calculation of the inductor current. In the fabricated circuit, the average current changes from 144.03 mA to 155.97 mA when the ambient temperature changes from 0℃ to 60℃. The application of this study can enable the fabrication of a driving IC for LEDs in the form of a single chip without sensing resistors. This is expected to reduce the complexity of the peripheral circuit and enable precise feedback control.

FRCCs의 자가센싱 임피던스 응답에 미치는 균열 발생 및 온도 변화 영향성 (Crack Initiation and Temperature Variation Effects on Self-sensing Impedance Responses of FRCCs)

  • 강명수;강만성;이한주;임홍재;안윤규
    • 한국구조물진단유지관리공학회 논문집
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    • 제22권3호
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    • pp.69-74
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    • 2018
  • Fiber-Reinforced Cementitious Composites (FRCCs)는 시멘트 복합체에 혼입한 전도성 섬유로 인해 전기 전도성을 가진다. 이러한 특성은 전기적 응답 계측을 통하여 별도의 센서 설치가 필요 없는 구조물의 균열 모니터링을 가능하게 한다. 하지만 전기적 응답은 균열 발생뿐만 아니라 온도의 변화에도 민감하게 변화하기 때문에 온도 요인은 전기적 응답 계측을 통한 균열 탐지를 방해하는 요소로 작용할 수 있다. 더욱이 전기적 응답을 측정하기 위한 탐침의 개수가 증가 할수록 원하지 않은 접촉 노이즈가 발생하기 때문에 이 논문에서는 탐침의 개수를 줄이기 위해 자체적인 자가센싱 임피던스 회로를 설계하였다. FRCC의 균열 발생과 온도 변화가 임피던스에 미치는 영향성은 자가센싱 임피던스 회로를 이용해 실험적으로 측정되었으며, 실험 결과, 임피던스 응답은 균열 발생보다 온도 변화에 더 민감하게 변화됨을 알 수 있었다.

과전류 및 단락사고 방지용 전기안전 제어장치에 관한 연구 (A Study on Electric Safety Control Device for Prevention of Over Current and Short Circuit Faults)

  • 조시환;곽동걸;정도영;심재선;김정숙
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.2100-2101
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    • 2008
  • This paper is studied on a protective control system for electrical fire and electrical faults due to over current or electric short circuit faults by using electrical thermal characteristics of PTC (Positive Temperature Coefficient) thermistor and current response characteristics of high sensitive reed switch. The PTC thermistor has characteristic of positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with BaTiO3_Ceramics of positive temperature coefficient. Also PTC thermistor shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point, and reed switch, which is used for electrical fault current sensing devices, have a excellent characteristic of response velocity in degree of ${\mu}s{\sim}ms$ that sensing magnetic flux in proportion to dimension of line current. This paper is proposed on a protective control system use PTC thermistor and reed switch for sensor which is protected from electrical fire due to overload faults or electric short circuit faults. Some experimental results of the proposed electric safety control device are confirmed to the validity of the analytical results.

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산화철-탄소나노튜브 나노복합체의 암모니아 가스센서 응용 (Iron Oxide-Carbon Nanotube Composite for NH3 Detection)

  • 이현동;김다혜;고다애;김도진;김효진
    • 한국재료학회지
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    • 제26권4호
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    • pp.187-193
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    • 2016
  • Fabrication of iron oxide/carbon nanotube composite structures for detection of ammonia gas at room temperature is reported. The iron oxide/carbon nanotube composite structures are fabricated by in situ co-arc-discharge method using a graphite source with varying numbers of iron wires inserted. The composite structures reveal higher response signals at room temperature than at high temperatures. As the number of iron wires inserted increased, the volume of carbon nanotubes and iron nanoparticles produced increased. The oxidation condition of the composite structures varied the carbon nanotube/iron oxide ratio in the structure and, consequently, the resistance of the structures and, finally, the ammonia gas sensing performance. The highest sensor performance was realized with $500^{\circ}C/2h$ oxidation heat-treatment condition, in which most of the carbon nanotubes were removed from the composite and iron oxide played the main role of ammonia sensing. The response signal level was 62% at room temperature. We also found that UV irradiation enhances the sensing response with reduced recovery time.

다채널 대용량 충방전기 모듈 개발에 대한 연구 (A Study on the Multi-Channel Large Capacity Charge/Discharge Formation Module)

  • 이준하
    • 반도체디스플레이기술학회지
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    • 제15권2호
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    • pp.55-60
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    • 2016
  • This study was developed through the secondary battery module charging/discharger possible utilization in the production process equipment circuit. The developed module is ensuring construction of efficient and productive charging and discharger through this research a limit on the yield and the price of existing single -channel charge and discharger circuit as a 5V 70A grade secondary battery Formation charge and discharger for up to 1 board 4 channels. In order to improve the sensing accuracy, through a robust differential amplifier circuit described using 16bit Analog-Digital Converter and noise was secured 16bit resolution sensing. The configuration also made demands for property Rise / Fall Time. Data Acquisition, discharge efficiency and also to fit the sink circuit temperature level for mass production.

마이크로프로세서를 사용한 고효율 인버터 안정기에 관한 연구 (A Study on Hight Efficiency Inverter Ballast using Microprocessor)

  • 정재륜
    • 한국조명전기설비학회지:조명전기설비
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    • 제13권2호
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    • pp.220-220
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    • 1999
  • This paper describes the high efficiency inverter ballast circuit using very cheap microprocessor, which has been developed by the author. A variety of soft-switching techniques have been proposed to reduce the switching losses and EMI problems that occur with higher switching frequencies in switched inverter ballast. The inverter ballast circuit, which employs a temperature sensing circuits has been also proposed to improve starting performance of the fluorescent lamps. That is, the inverter ballast circuit, which employs a soft-starting circuit and soft-switching techniques to implement the power factor correction and to mitigate of power-loss and increase a life time of the fluorescent lamps, has become an attractive performance for ballasting the fluorescent lamps. In this paper, the operation and the control of the inverter ballast are described in detail and experimental results are presented. As the experimental results, when environment temperature is at -40℃, the inverter ballast circuit has low THD(4.8%) of the input current and large power factor(98%) of the lamp current. The proposed improved ballast circuit appears to be a good performance for ballasting fluorescent lamps.

일산화질소 가스 검출을 위한 CuO 박막/ZnO 나노막대 이종접합 구조의 제작 및 특성 평가 (Fabrication and Characterization of CuO Thin Film/ZnO Nanorods Heterojunction Structure for Efficient Detection of NO Gas)

  • 유환수;김효진;김도진
    • 한국재료학회지
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    • 제28권1호
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    • pp.32-37
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    • 2018
  • We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

Circuit Design of DRAM for Mobile Generation

  • Sim, Jae-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권1호
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    • pp.1-10
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    • 2007
  • In recent few years, low-power electronics has been a leading drive for technology developments nourished by rapidly growing market share. Mobile DRAM, as a fundamental block of hand-held devices, is now becoming a product developed by limitless competition. To support application specific mobile features, various new power-reduction schemes have been proposed and adopted by standardization. Tightened power budget in battery-operated systems makes conventional schemes not acceptable and increases difficulty of the circuit design. The mobile DRAM has successfully moved down to 1.5V era, and now it is about to move to 1.2V. Further voltage scaling, however, presents critical problems which must be overcome. This paper reviews critical issues in mobile DRAM design and various circuit schemes to solve the problems. Focused on analog circuits, bitline sensing, IO line sensing, refresh-related schemes, DC bias generation, and schemes for higher data rate are covered.